Abstract: A semiconductor device includes: a first nitride semiconductor layer having a first surface and a second surface facing the first surface; a first source electrode provided below the first surface; a first drain electrode provided below the first surface; a first gate electrode provided below the first surface and the first gate electrode being provided between the first source electrode and the first drain electrode; a second nitride semiconductor layer provided on the second surface, the second nitride semiconductor layer having a third surface in contact with the second surface and a fourth surface facing the third surface and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; a first silicon substrate provided on the fourth surface and the first silicon substrate having a fifth surface in contact with the fourth surface and a sixth surface facing the fifth surface; a second silicon substrate provided on the sixth surface and the second silicon subs

Abstract: According to one embodiment, a substrate holding plate includes an inorganic material layer that has through holes and pores therein. The inorganic material layer has a first surface to which a flat surface of a substrate can be adhered for subsequent processing, such as polishing or the like. The pores of the inorganic material layer have an average diameter that is smaller than an average diameter of the through holes of the inorganic material layer.

Abstract: A semiconductor device includes a substrate, a first layer above the substrate and including a nitride semiconductor layer of a first conductivity type, a second layer on the first layer and including a nitride semiconductor layer of the first conductivity type containing Al, an insulating film on the upper surface of the second layer in a first region of the upper surface of the second layer, a third layer on the upper surface of the second layer in a second region of the upper surface of the second layer, the third layer including a nitride semiconductor layer of a second conductivity type, the third layer including a first portion in contact with the second layer and a second portion on the first portion, and an electrode on the second portion. A width of the first portion is larger than that of the second region and that of the first portion.

Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: According to an embodiment, a semiconductor device includes a semiconductor layer, a first insulating layer that has refractive index of 1.95 or less, contains silicon nitride, and located on the semiconductor layer, and a resin that is provided on the first insulating layer and is in contact with the first insulating layer.

Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, a third nitride semiconductor layer on the second nitride semiconductor layer, an electrode on the third nitride semiconductor layer, and an insulating layer under the electrode and between the first nitride semiconductor layer and the second nitride semiconductor layer.

Abstract: According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.

Abstract: A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.

Abstract: A light emitting device and a method for manufacturing the same are provided. The light emitting device includes: a first substrate having electrical conductivity; a foundation layer; a bonded metal layer configured to bond one major surface of the foundation layer to the first substrate; a mask layer provided on the other major surface of the foundation layer, having a window, and made of an insulator; and a multilayer body selectively provided on the foundation layer exposed to the window, and including a light emitting layer.

Abstract: A method for manufacturing a light emitting device, includes: preparing a first substrate by slicing a single crystal ingot pulled in a pulling direction tilted with respect to a first plane orientation, the slicing being in a direction substantially perpendicular to the pulling direction; preparing a second substrate including a major surface having a plane orientation substantially parallel to a plane orientation of a major surface of the first substrate; growing a stacked unit as a crystal on the major surface of the second substrate, the stacked unit including a light emitting layer; and removing the second substrate after bonding the stacked unit and the major surface of the first substrate by heating them in a joined state.

Abstract: A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.

Abstract: A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.

Abstract: According to one embodiment, a light emitting element includes a semiconductor stacked body and a translucent substrate. The semiconductor stacked body includes a light emitting layer. The translucent substrate has one surface and a side surface. The semiconductor stacked body is provided on the upper surface. An unevenness uniformly distributing with average height and average pitch is provided on the side surface.

Abstract: According to one embodiment, a light emitting device includes a light emitting element, a molded body, a first sealing layer and a converging lens. The light emitting element has a first surface and a second surface with an optical axis of emission light being perpendicular to the second surface. The molded body includes a recess. The first surface side of the light emitting element is disposed in the recess. The first sealing layer covers the light emitting element in the recess and includes a first transparent resin and phosphor particles. The converging lens is provided on the first sealing layer and has a refractive index increasing with increase of distance from the optical axis. The refractive index at a position in contact with an outer edge of the upper surface of the first sealing layer is higher than a refractive index of the first transparent resin.

Abstract: According to one embodiment, a light emitting device includes a light emitting element, a molded body, a first sealing layer, and a converging lens. The light emitting element has a first surface and a second surface opposite to the first surface, with an optical axis of emission light being perpendicular to the second surface. The molded body includes a recess. The first surface side of the light emitting element is disposed in the recess. The first sealing layer covers the light emitting element in the recess and includes a first transparent resin and phosphor particles. The converging lens is provided on an upper surface of the first sealing layer and has a refractive index increasing with increase of distance from the optical axis. The refractive index at a position in contact with an outer edge of the upper surface of the first sealing layer is higher than a refractive index of the first transparent resin.

Abstract: A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.

Abstract: According to one embodiment, a light emitting device includes a light emitting element, a molded body, a first sealing layer, and a converging lens. The light emitting element has a first surface and a second surface opposite to the first surface, with an optical axis of emission light being perpendicular to the second surface. The molded body includes a recess. The first surface side of the light emitting element is disposed in the recess. The first sealing layer covers the light emitting element in the recess and includes a first transparent resin and phosphor particles. The converging lens is provided on an upper surface of the first sealing layer and has a refractive index increasing with increase of distance from the optical axis. The refractive index at a position in contact with an outer edge of the upper surface of the first sealing layer is higher than a refractive index of the first transparent resin.

Abstract: According to one embodiment, a light emitting device includes a substrate, a bonding layer, a plurality of protrusions, a first electrode, a translucent resin layer, and a first overcoat electrode. The bonding layer is provided on the substrate. The plurality of protrusions is provided on the bonding layer and includes a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer. The first electrode is provided on the second conductivity type layer. The translucent resin layer is provided around the protrusions. The first overcoat electrode is provided on the translucent resin layer and connects the first electrodes respectively provided on the plurality of protrusions. The substrate, the translucent resin layer, and the first overcoat electrode each are exposed at a side surface of the light emitting device.

Abstract: According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.

Abstract: According to one embodiment, a light emitting element includes a semiconductor stacked body and a translucent substrate. The semiconductor stacked body includes a light emitting layer. The translucent substrate has one surface and a side surface. The semiconductor stacked body is provided on the upper surface. An unevenness uniformly distributing with average height and average pitch is provided on the side surface.