Patents by Inventor Chisato Furukawa
Chisato Furukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100237366Abstract: A method for manufacturing a light emitting device, includes: preparing a first substrate by slicing a single crystal ingot pulled in a pulling direction tilted with respect to a first plane orientation, the slicing being in a direction substantially perpendicular to the pulling direction; preparing a second substrate including a major surface having a plane orientation substantially parallel to a plane orientation of a major surface of the first substrate; growing a stacked unit as a crystal on the major surface of the second substrate, the stacked unit including a light emitting layer; and removing the second substrate after bonding the stacked unit and the major surface of the first substrate by heating them in a joined state.Type: ApplicationFiled: January 20, 2010Publication date: September 23, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kenji Isomoto, Chisato Furukawa
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Patent number: 7800120Abstract: A semiconductor light emitting element comprising: a plurality of light-emitting-layer forming portions each of which includes a pn junction capable of emitting light of a certain wavelength, and which are separated from one another with a translucent resin formed on the side portions of the light-emitting-layer forming portions; a metal film disposed on first surfaces of the light-emitting-layer forming portions; a conductive substrate bonded to the metal film; a lower electrode formed on a surface of the conductive substrate, the surface being opposite to the surface to which the metal film is bonded; a transparent electrode which is connected to second surfaces, opposite to the first surfaces, of the light-emitting-layer forming portions, and which is substantially transparent to the certain wavelength; and an upper electrode formed above the second surfaces of the light-emitting-layer forming portions with the transparent electrode sandwiched in between.Type: GrantFiled: December 20, 2007Date of Patent: September 21, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20100084669Abstract: A light emitting device and a method for manufacturing the same are provided. The light emitting device includes: a first substrate having electrical conductivity; a foundation layer; a bonded metal layer configured to bond one major surface of the foundation layer to the first substrate; a mask layer provided on the other major surface of the foundation layer, having a window, and made of an insulator; and a multilayer body selectively provided on the foundation layer exposed to the window, and including a light emitting layer.Type: ApplicationFiled: June 16, 2009Publication date: April 8, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20090294795Abstract: A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.Type: ApplicationFiled: February 3, 2009Publication date: December 3, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20080192791Abstract: According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.Type: ApplicationFiled: February 7, 2008Publication date: August 14, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20080164457Abstract: A semiconductor light emitting element comprising: a plurality of light-emitting-layer forming portions each of which includes a pn junction capable of emitting light of a certain wavelength, and which are separated from one another with a translucent resin formed on the side portions of the light-emitting-layer forming portions; a metal film disposed on first surfaces of the light-emitting-layer forming portions; a conductive substrate bonded to the metal film; a lower electrode formed on a surface of the conductive substrate, the surface being opposite to the surface to which the metal film is bonded; a transparent electrode which is connected to second surfaces, opposite to the first surfaces, of the light-emitting-layer forming portions, and which is substantially transparent to the certain wavelength; and an upper electrode formed above the second surfaces of the light-emitting-layer forming portions with the transparent electrode sandwiched in between.Type: ApplicationFiled: December 20, 2007Publication date: July 10, 2008Inventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20070147032Abstract: A visible light communication oriented illumination device includes: a transmitting section including a light emitting element which emits an excitation light, a first wavelength-converting material, and a second wavelength-converting material; and a receiving section including a receiver and a demodulator. The first wavelength-converting material absorbs the excitation light and emits a first light. The second wavelength-converting material absorbs the excitation light and emits a second light which is different in wavelength and has a shorter 1/10 persistence time than the first light. The transmission section is configured to emit an illuminating light including the first and second lights. The receiver receives the second light and transforms the second light into an electrical signal, and the demodulator receives the electrical signal outputted from the receiving section and outputs a signal corresponding to an information transmitted from the transmitting section.Type: ApplicationFiled: December 14, 2006Publication date: June 28, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Takafumi Nakamura
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Patent number: 7122446Abstract: Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.Type: GrantFiled: July 20, 2004Date of Patent: October 17, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Nitta, Haruhiko Okazaki, Yukio Watanabe, Chisato Furukawa
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Publication number: 20060220053Abstract: A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.Type: ApplicationFiled: March 30, 2006Publication date: October 5, 2006Applicant: Kabushiki Kaisha ToshibaInventors: Chisato Furukawa, Takafumi Nakamura
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Publication number: 20050194609Abstract: A semiconductor light emitting device ensuring a uniform color tone comprises a semiconductor light emitting element that emits light of a first wavelength upon injection of a current, a fluorescent material portion that contains a fluorescent material excited by light of the first wavelength to emit light of a second wavelength, and a diffuser mixed in an appropriate material around the semiconductor light emitting element.Type: ApplicationFiled: April 28, 2005Publication date: September 8, 2005Inventors: Chisato Furukawa, Masayuki Morishita
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Publication number: 20050189539Abstract: A semiconductor light emitting device ensuring a uniform color tone comprises a semiconductor light emitting element that emits light of a first wavelength upon injection of a current, a fluorescent material portion that contains a fluorescent material excited by light of the first wavelength to emit light of a second wavelength, and a diffuser mixed in an appropriate material around the semiconductor light emitting element.Type: ApplicationFiled: April 28, 2005Publication date: September 1, 2005Inventors: Chisato Furukawa, Masayuki Morishita
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Patent number: 6936852Abstract: A semiconductor light emitting device ensuring a uniform color tone comprises a semiconductor light emitting element that emits light of a first wavelength upon injection of a current, a fluorescent material portion that contains a fluorescent material excited by light of the first wavelength to emit light of a second wavelength, and a diffuser mixed in an appropriate material around the semiconductor light emitting element.Type: GrantFiled: April 10, 2003Date of Patent: August 30, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Chisato Furukawa, Masayuki Morishita
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Publication number: 20050035362Abstract: Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.Type: ApplicationFiled: July 20, 2004Publication date: February 17, 2005Inventors: Koichi Nitta, Haruhiko Okazaki, Yukio Watanabe, Chisato Furukawa
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Patent number: 6803603Abstract: Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.Type: GrantFiled: June 22, 2000Date of Patent: October 12, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Nitta, Haruhiko Okazaki, Yukio Watanabe, Chisato Furukawa
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Patent number: 6791118Abstract: There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO in stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.Type: GrantFiled: June 23, 2003Date of Patent: September 14, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Chisato Furukawa, Hideto Sugawara, Nobuhir Suzuki
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Publication number: 20040079955Abstract: There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.Type: ApplicationFiled: June 23, 2003Publication date: April 29, 2004Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Hideto Sugawara, Nobuhiro Suzuki
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Patent number: 6674097Abstract: A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer.Type: GrantFiled: October 24, 2001Date of Patent: January 6, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Koichi Nitta, Nobuhiro Suzuki, Kuniaki Konno, Hideto Sugawara, Chisato Furukawa
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Patent number: 6661030Abstract: A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer.Type: GrantFiled: October 23, 2001Date of Patent: December 9, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Koichi Nitta, Nobuhiro Suzuki, Kuniaki Konno, Hideto Sugawara, Chisato Furukawa
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Publication number: 20030218228Abstract: A semiconductor light emitting device ensuring a uniform color tone comprises a semiconductor light emitting element that emits light of a first wavelength upon injection of a current, a fluorescent material portion that contains a fluorescent material excited by light of the first wavelength to emit light of a second wavelength, and a diffuser mixed in an appropriate material around the semiconductor light emitting element.Type: ApplicationFiled: April 10, 2003Publication date: November 27, 2003Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Chisato Furukawa, Masayuki Morishita
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Patent number: 6627521Abstract: There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.Type: GrantFiled: October 28, 2002Date of Patent: September 30, 2003Assignee: Kabushiki Kaisha ToshibaInventors: Chisato Furukawa, Hideto Sugawara, Nobuhiro Suzuki