Patents by Inventor Chiu Ting

Chiu Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spatially-arranged chemical processing station
    Publication number: 20040094087
    Abstract: The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space.
    Type: Application
    Filed: November 19, 2002
    Publication date: May 20, 2004
    Inventors: Igor Ivanov, Chiu Ting, Jonathan Weiguo Zhang, Arthur Kolics
  • Copper-aluminum metallization
    Patent number: 6271591
    Abstract: A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: August 7, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Valery Dubin, Chiu Ting
  • Pulse electroplating copper or copper alloys
    Patent number: 5972192
    Abstract: High aspect ratio openings in excess of 3, such as trenches, via holes or contact holes, in a dielectric layer are voidlessly filled employing a pulse or forward-reverse pulse electroplating technique to deposit copper or a copper-base alloy. A leveling agent is incorporated in the electroplating composition to ensure that the opening is filled substantially sequentially from the bottom upwardly.
    Type: Grant
    Filed: July 23, 1997
    Date of Patent: October 26, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Valery Dubin, Chiu Ting, Robin W. Cheung
  • Plated copper interconnect structure
    Patent number: 5969422
    Abstract: A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for the subsequently plated Cu or Cu-base alloy. Another embodiment comprises initially depositing a refractory metal barrier layer before depositing the seed layer.
    Type: Grant
    Filed: May 15, 1997
    Date of Patent: October 19, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Chiu Ting, Valery Dubin
  • Method for fabricating copper-aluminum metallization
    Patent number: 5913147
    Abstract: A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: June 15, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Valery Dubin, Chiu Ting