Patents by Inventor Chiun Wang

Chiun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120313113
    Abstract: A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are disposed on the same surface of the substrate that the solar cell module is disposed on. The organic light emitting diode is electrically isolated from the solar cell module. The solar cell module can apply power to the organic light emitting diodes for emitting light.
    Type: Application
    Filed: September 9, 2011
    Publication date: December 13, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Chih Chen, Ching-Chiun Wang, Chih-Yung Huang, Szu-Hao Chen, Chan-Hsing Lo, Chung-Ping Chiang
  • Publication number: 20120235121
    Abstract: According to an embodiment of the disclosure, an organic light emitting device is provided, which includes: an inflexible tube comprising an external surface and an internal surface; a transparent conductive layer on the internal surface of the inflexible tube; an organic light emitting layer disposed in the inflexible tube and on the transparent conductive layer; and a conductive layer disposed in the inflexible tube and on the organic light emitting layer. According to an embodiment of the disclosure, a method for forming an organic light emitting device is also provided.
    Type: Application
    Filed: September 19, 2011
    Publication date: September 20, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Chih CHEN, Ching-Chiun WANG, Chih-Yung HUANG, Jwo-Huei JOU, Fu-Ching TUNG
  • Publication number: 20120145078
    Abstract: A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process.
    Type: Application
    Filed: August 17, 2011
    Publication date: June 14, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Yung Huang, Ching-Chiun Wang, Chen-Der Tsai, Wen-Tung Hsu, Fu-Ching Tung, Chien-Chih Chen, Yi-Tsung Pan, Chien-Jen Sun
  • Publication number: 20120070590
    Abstract: This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.
    Type: Application
    Filed: December 16, 2010
    Publication date: March 22, 2012
    Applicant: Industrial Technology Research Institute
    Inventors: Jen-Rong Huang, Tean-Mu Shen, Kang-Feng Lee, Chin-Chong Chiang, Sheng-Lang Lee, Jung-Chen Ho, Ching-Chiun Wang
  • Patent number: 8124954
    Abstract: A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid electrolyte layer is located on the first electrode layer. The second electrode layer is located on the solid electrolyte layer. The metal layer is located near the solid electrolyte layer. The dielectric layer is located between the solid electrolyte layer and the metal layer. Since the metal layer is disposed near the solid electrolyte layer in the CBRAM device, it can generate a positive electric field during an erase operation, so as to accelerate a break of mutually connected metal filaments.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: February 28, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Ching-Chiun Wang, Cha-Hsin Lin
  • Publication number: 20120032355
    Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.
    Type: Application
    Filed: January 4, 2011
    Publication date: February 9, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ching-Chiun Wang, Kang-Feng Lee, Feng-Yu Tsai, Ming Hom Zheng, Chih-Yung Huang, Shih-Chin Lin, Jen-Rong Huang
  • Patent number: 8068999
    Abstract: A system and method of characterizing or controlling a flow of a fluid is provided that involves a sensor conduit and a bypass. A plurality of fluids may be utilized in the flow control device based on characteristic information of the device generated during calibration thereof. The characteristic information, in turn is based on a dimensionless parameters, such as adjusted dynamic pressure and adjusted Reynolds number.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: November 29, 2011
    Assignee: Brooks Instrument, LLC
    Inventors: Chiun Wang, John M. Lull, William S. Valentine
  • Publication number: 20110283547
    Abstract: A cutter holder having a holder block made of one single piece or multiple pieces of cork material and one or multiple cutter-resting devices defined in the holder block for the insertion of the cutter blade of one or a number of cutting tools.
    Type: Application
    Filed: May 18, 2010
    Publication date: November 24, 2011
    Inventor: Chie-Chiun WANG
  • Patent number: 8010303
    Abstract: A system and method of characterizing or controlling a flow of a fluid is provided that involves a sensor conduit and a bypass. A plurality of fluids may be utilized in the flow control device based on characteristic information of the device generated during calibration thereof. The characteristic information, in turn is based on a dimensionless parameters, such as adjusted dynamic pressure and adjusted Reynolds number.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: August 30, 2011
    Assignee: Brooks Intrument, LLC
    Inventors: Chiun Wang, John M. Lull, William S. Valentine
  • Publication number: 20110195186
    Abstract: A manufacturing method and system using a plane-type film continuous evaporation source are disclosed, in which the manufacturing method comprises the steps of: providing a plane-type film continuous evaporation source, being a substrate having at least one evaporation material coated on a surface thereof while distributing the at least one evaporation material in a specific area of the substrate capable of covering all the plates to be processed by the evaporated evaporation material; arranging a heater inside the specific area to be used for enabling the at least one evaporation material to evaporate and thus spreading toward the processed plates. Thereby, the evaporated evaporation material can be controlled at the molecular/atomic level for enabling the same to form a film according to surface-nucleation, condensation and growth with superior evenness, nano-scale adjustability, specialized structure and function that can not be achieve by the films from conventional spray coating means.
    Type: Application
    Filed: February 9, 2011
    Publication date: August 11, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Chih Chen, Ching-Chiun Wang, Ching-Huei Wu, Fu-Ching Tung
  • Patent number: 7880213
    Abstract: A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: February 1, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Miao Lo, Lurng-Sheng Lee, Pei-Ren Jeng, Cha-Hsin Lin, Ching-Chiun Wang
  • Patent number: 7874208
    Abstract: An improved flow measuring device, such as a mass flow meter or mass flow controller, providing a high turn-down ratio as compared to prior art devices. In accordance with various embodiments of the invention, a flow sensor includes a sensor flow path that includes one or more restrictions configured to provide the sensor flow path with a non-linear relationship between a pressure drop across the sensor flow path and the flow of fluid through the flow sensor conduit. Such a flow sensor preferably achieves a high turn-down ratio by way of a variable bypass ratio that is directly proportional to the sensor tube mass flow rate so that the turn-down ratio of the mass flow controller will be ideally proportional to the square of the turndown achievable by the flow sensor conduit fluid sensing portion alone. In some embodiments, the restriction can be employed as a part of a fluid seal having an orifice and disposed between a flow sensor portion of a flow meter and a bypass portion of the flow meter.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: January 25, 2011
    Assignee: Brooks Instrument, LLC
    Inventors: Eric J. Redemann, Chiun Wang, Thomas Owen Maginnis
  • Patent number: 7799653
    Abstract: A method for forming a capacitor in a dynamic random access memory, comprising steps of: providing a semiconductor substrate having at least a transistor, whereon an interlayer dielectric layer having at least a first plug is formed so that the first plug is connected to the drain of the transistor; depositing an etching stop layer on the first plug and the interlayer dielectric layer; depositing a first insulating layer on the etching stop layer; forming at least a second plug on the first insulating layer and the etching stop layer so that the second plug is connected to the first plug; depositing a second insulating layer on the first insulating layer and the second plug; forming at least a mold cavity in the second insulating layer so that the aperture of the mold cavity is larger than the diameter of the second plug and there is a deviation between the mold cavity and the second plug; removing the first insulating layer in the mold cavity until the etching stop layer; depositing a first electrode layer t
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: September 21, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Heng-Yuan Lee, Ching-Chiun Wang, Tai-Yuan Wu
  • Patent number: 7781298
    Abstract: A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mask layer is patterned to form a patterned second mask layer in a predetermined region for formation of a capacitor. A plurality of hemispherical grain structures are formed on a sidewall of the patterned second mask layer. The first mask layer is etched by using the hemispherical grain structures and the patterned second mask layer as a mask, thereby forming a patterned first mask layer having a pattern. The pattern of the first mask layer is transferred to the bottom electrode material layer. And, a capacitor dielectric layer and a top electrode layer are formed on the bottom electrode material layer to form the capacitor.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: August 24, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Hengyuan Lee, Lurng-Shehng Lee, Ching Chiun Wang, Pei-Jer Tzeng
  • Publication number: 20100163829
    Abstract: A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid electrolyte layer is located on the first electrode layer. The second electrode layer is located on the solid electrolyte layer. The metal layer is located near the solid electrolyte layer. The dielectric layer is located between the solid electrolyte layer and the metal layer. Since the metal layer is disposed near the solid electrolyte layer in the CBRAM device, it can generate a positive electric field during an erase operation, so as to accelerate a break of mutually connected metal filaments.
    Type: Application
    Filed: May 27, 2009
    Publication date: July 1, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ching-Chiun Wang, Cha-Hsin Lin
  • Publication number: 20100164062
    Abstract: A method of manufacturing through-silicon-via (TSV) and a TSV structure are provided. The TSV structure includes a silicon substrate, an annular capacitor, a conductive through-via, a layer of low-k material, and a bump. The annular capacitor is within the silicon substrate and constituted of a first conductive layer, a capacitor dielectric layer, and a second conductive layer from the inside to the outside. The conductive through-via is disposed in the silicon substrate surrounded by the annular capacitor, and the layer of low-k material is between the annular capacitor and the conductive through-via. The bump is in touch with the conductive through-via for bonding other chip.
    Type: Application
    Filed: June 9, 2009
    Publication date: July 1, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ching-Chiun Wang, Tai-Yuan Wu, Yu-Sheng Chen, Cha-Hsin Lin
  • Patent number: 7720617
    Abstract: A method of obtaining at least one representation of a characteristic function of a sensor from a test fluid during calibration of the sensor according to a sensor model having a transfer function operating on flow rate, at least one sensor property and at least one fluid property and employing the at least one representation of the characteristic function to determine flow rates through the sensor during operation with an arbitrary fluid.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: May 18, 2010
    Assignee: Brooks Instrument, LLC
    Inventors: Chiun Wang, William S. Valentine, John M. Lull
  • Patent number: 7700988
    Abstract: A metal-insulator-metal (MIM) capacitor having a top electrode, a bottom electrode and a capacitor dielectric layer is provided. The top electrode is located over the bottom electrode and the capacitor dielectric layer is disposed between the top and the bottom electrode. The capacitor dielectric layer comprises several titanium oxide (TiO2) layers and at least one tetragonal structure material layer. The tetragonal structure material layer is disposed between two titanium oxide layers and each tetragonal structure material layer has the same or a different thickness. Leakage path can be cut off through the tetragonal material layer between the titanium oxide layers. In the meantime, the tetragonal structure material layer can induce the titanium oxide layers to transform into a high k rutile phase.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: April 20, 2010
    Assignee: Industrail Technology Research Institute
    Inventors: Cha-Hsin Lin, Ching-Chiun Wang, Lurng-Shehng Lee
  • Patent number: 7683374
    Abstract: A method of fabricating a photodetector device includes preparing a silicon substrate, forming a patterned mesa on the silicon substrate, and forming a patterned conductive layer over the patterned mesa.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: March 23, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Cha-Hsin Lin, Lurng-Shehng Lee, Ching-Chiun Wang
  • Publication number: 20100070206
    Abstract: A system and method of characterizing or controlling a flow of a fluid is provided that involves a sensor conduit and a bypass. A plurality of fluids may be utilized in the flow control device based on characteristic information of the device generated during calibration thereof. The characteristic information, in turn is based on a dimensionless parameters, such as adjusted dynamic pressure and adjusted Reynolds number.
    Type: Application
    Filed: October 13, 2009
    Publication date: March 18, 2010
    Inventors: Chiun Wang, John M. Lull, William S. Valentine