Abstract: Embodiments of the present invention generally relate to an automated production line using a common laser scribe module for providing consistent scribe lines in multiple layers during the formation of thin film photovoltaic modules. The common laser scribe module includes a plurality of identical, programmable laser tools configured to emit radiation at a common wavelength. Substrates flowing through the production line are tracked by a system controller, which identifies available laser tools within the common laser scribe module and routes substrates to available tools for scribing features in one or more layers disposed on the substrates. The system controller also sets and controls laser parameters, such as power, pulse frequency, pulse width, and laser pattern, in order to accurately and consistently produce scribed lines in the appropriate material layer of the substrate.

Abstract: Photovoltaic module and methods for the manufacture of photovoltaic modules are described. Operative layers of the photovoltaic cell are deposited onto a superstrate having one or more of at least one peak allowing for electrical isolation of a portion of a photovoltaic module and at least one ramp creating a series connection between individual photovoltaic cells with minimal loss of the efficiency due to dead space between the cells.

Abstract: Embodiments of the present invention provide methods for fabricating a solar cell on a substrate that have proportionally reduced current to minimize or reduce the likelihood of shading of a portion of the solar cell causing damage to the formed device. In one embodiment, a method for fabricating a series of solar cell arrays on a substrate includes providing a substrate having a TCO layer formed thereon, forming a first plurality of vertical scribing lines and a first plurality of horizontal scribing lines in the TCO layer, forming a film stack and a back metal layer on the scribed TCO layer, and forming a second plurality of the horizontal scribing lines in the film stack and the back metal layer, wherein the second plurality of horizontal scribing lines comprise pairs of scribing lines formed adjacent to each respective one of the first plurality of the horizontal scribing lines formed in the TCO layer.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.

Abstract: Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent.

Abstract: Embodiments of the present invention provide methods for fabricating a solar cell on a substrate that have proportionally reduced current to minimize or reduce the likelihood of shading of a portion of the solar cell causing damage to the formed device. In one embodiment, a method for fabricating a series of solar cell arrays on a substrate includes providing a substrate having a TCO layer formed thereon, forming a first plurality of vertical scribing lines and a first plurality of horizontal scribing lines in the TCO layer, forming a film stack and a back metal layer on the scribed TCO layer, and forming a second plurality of the horizontal scribing lines in the film stack and the back metal layer, wherein the second plurality of horizontal scribing lines comprise pairs of scribing lines formed adjacent to each respective one of the first plurality of the horizontal scribing lines formed in the TCO layer.

Abstract: Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that precisely removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern and deposits a conductive layer over the patterned dielectric layer. In one embodiment, the apparatus also removes portions of the conductive layer in a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film.

Abstract: Solar cell modules and mounting methods are disclosed. A solar cell module includes one or more photovoltaic (PV) cells arranged in a substantially planar fashion. Each PV cell has a front side and a back side. The PV cells are adapted to produce an electric voltage when light is incident upon the front side. A rigid back plane is attached to the PV cells such that the back plane provides structural support from the back side. The rigid back plane includes a structural component having a plurality of voids.

Abstract: A compound film for an active layer of a photovoltaic device may be formed in two or more sub-layers. A first sub-layer having a first component of the active layer may be formed on a substrate with a first process. A second sub-layer including a second component of the active layer may then be formed using a second process such that the first sub-layer is disposed between the second sub-layer and the substrate. The second component has a different chemical composition than the first component. The first and/or second sub-layer may comprise one or more components in the form of particles and/or globules. This procedure may be repeated any number of times for any number of sub-layers so that active layer can be built up sequentially. The different chemical compositions of the components in the sub-layers can provide the active layer with a graded bandgap. The components of the sub-layers may include elements of group IB, and/or group IIIA.

Abstract: A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Abstract: A method for preparing materials in particulate and bulk forms is disclosed. Particulate materials prepared by the method include for example single-phase, mixed-metal oxide materials; multi-phase, mixed-metal materials comprising a metal oxide; and multinary metal materials.

Abstract: Materials in bulk and film forms are prepared from fine particulate precursors such as single-phase, mixed-metal oxides; multi-phase, mixed-metal particles comprising a metal oxide; multinary metal particles; mixtures of such particles with other particles; and particulate materials intercalated with other materials.

Abstract: A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.