Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract: A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second doped region of a second conductivity type located beneath the first surface level of the substrate. A photodiode gate is formed of a first dielectric substance layer formed over the first surface of the substrate, thereby forming a second surface, and a second polysilicon layer formed over the second surface of the first layer. A transistor is located adjacent to the photodiode. The photodiode gate improves charge transfer from the photodiode to the transfer gate and floating diffusion region. The improved charge transfer minimizes image lag and leakage and reduces energy barriers.

Abstract: A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.

Abstract: A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.

Abstract: A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second doped region of a second conductivity type located beneath the first surface level of the substrate. A photodiode gate is formed of a first dielectric substance layer formed over the first surface of the substrate, thereby forming a second surface, and a second polysilicon layer formed over the second surface of the first layer. A transistor is located adjacent to the photodiode. The photodiode gate improves charge transfer from the photodiode to the transfer gate and floating diffusion region. The improved charge transfer minimizes image lag and leakage and reduces energy barriers.

Abstract: A method and apparatus for achieving high-dynamic range operation with a set of spatially distributed pixel cells is provided. A pixel array with a row of pixels having apertures of varying sizes in a metal mask formed thereon controls the sensitivity of each pixel cell to light. A neutral density filter having varying light transparency values is also provided over the set of pixel cells to control the sensitivity of each pixel cell to light. The pixel cells voltage outputted is combined to obtain high-dynamic range operation.

Abstract: A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.

Abstract: A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.

Abstract: A CMOS imaging device including a two pixel detection system for red, green, and blue light. One pixel detects red and blue light and another pixel detects green light. The detection of red and blue is based on wavelength and the device is structured such that in the red/blue pixel, detection of blue light is at a shallow substrate depth, while detection of red is at a deeper substrate depth. The pixel array is structured such that the red/blue pixel is adjacent to the green pixel and alternates between red/blue and green pixels. The invention is also related to methods of forming such an imager array and pixels.