Abstract: Methods, systems, and computer-readable mediums for configuring a lithography tool to manufacture a semiconductor device. The method includes selecting a first variable, selecting a second variable, selecting at least one response variable that is a function of the first variable and second variable, determining a measurement uncertainty for each response variable, determining, based on a measurement of the response variable, and the measurement uncertainty for the response variable, a plurality of probabilities representing a plurality of indications of whether a plurality of points associated with a lithography process meet a specification requirement for each response variable, wherein the plurality of probabilities represent a process window, and configuring, based on the process window, a lithography tool to manufacture a semiconductor device.

Abstract: Methods, systems, and computer-readable mediums for configuring a lithography tool to manufacture a semiconductor device. The method includes selecting a first variable, selecting a second variable, selecting at least one response variable that is a function of the first variable and second variable, determining a measurement uncertainty for each response variable, determining, based on a measurement of the response variable, and the measurement uncertainty for the response variable, a plurality of probabilities representing a plurality of indications of whether a plurality of points associated with a lithography process meet a specification requirement for each response variable, wherein the plurality of probabilities represent a process window, and configuring, based on the process window, a lithography tool to manufacture a semiconductor device.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: A method for predicting manufacturing variation is disclosed. The method may include measuring corresponding physical characteristics of multiple semiconductor features on multiple wafers produced using a semiconductor manufacturing process, and estimating a mean and a variance using the corresponding physical characteristics. The method may further include predicting manufacturing variation of the semiconductor manufacturing process using the mean and the variance, controlling the semiconductor manufacturing process using the predicted manufacturing variation, or determining a disposition of at least one of the multiple wafers.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: In one embodiment, a method for detecting edge positions in a pattern structure is disclosed. The method includes detecting the edge positions of features within the pattern structure of an image without filtering the image, wherein the detecting is performed by: applying a model to a single linescan, adjusting, based on the single linescan, one or more parameters of the model, obtaining, using the one or more adjusted parameters, a best fit of the model to the single linescan.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: An edge detection system is provided that generates a scanning electron microscope (SEM) linescan image of a pattern structure including a feature with edges that require detection. The edge detection system includes an inverse linescan model tool that receives measured linescan information for the feature from the SEM. In response, the inverse linescan model tool provides feature geometry information that includes the position of the detected edges of the feature.

Abstract: In one embodiment, a method includes determining, by a processor, a measurement of edge detection noise; receiving a measurement of a biased parameter including measurement noise; based on the measurement of edge detection noise and a number of measurement points, determining a contribution of edge detection noise to the biased parameter; determining an unbiased parameter by subtracting the contribution of noise from the biased parameter including the measurement noise; and outputting the unbiased parameter.

Abstract: In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.

Abstract: In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, calibrating, using unbiased measurement data, the model to a specific lithography process, patterning process, or both to generate a calibrated model, using the calibrated model to predict the low-probability stochastic defect; and modifying, based on the low-probability stochastic defect, a variable, parameter, setting, or some combination of a manufacturing process of a device.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: A method is disclosed. The method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information, determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, and analyzing the feature edge positions to detect the presence or absence of defects in the pattern structure.

Abstract: An edge detection system is disclosed. The edge detection system includes an imaging device configured for imaging a pattern structure to form a first image, wherein the pattern structure includes a predetermined feature, and the imaging device images the pattern structure to generate measured linescan information that includes image noise.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: Methods, systems, and computer-readable mediums for configuring a lithography tool to manufacture a semiconductor device. The method includes selecting a first variable, selecting a second variable, selecting at least one response variable that is a function of the first variable and second variable, determining a measurement uncertainty for each response variable, determining, based on a measurement of the response variable, and the measurement uncertainty for the response variable, a plurality of probabilities representing a plurality of indications of whether a plurality of points associated with a lithography process meet a specification requirement for each response variable, wherein the plurality of probabilities represent a process window, and configuring, based on the process window, a lithography tool to manufacture a semiconductor device.

Abstract: In one embodiment, a method includes receiving measured linescan information describing a pattern structure of a feature, applying the received measured linescan information to an inverse linescan model that relates measured linescan information to feature geometry information, and identifying, based at least in part on the applying the received measured linescan model to the inverse linescan model, feature geometry information that describes a feature that would produce a linescan corresponding to the received measured linescan information. The method also includes determining, at least in part using the inverse linescan model, feature edge positions of the identified feature, analyzing the feature edge positions to determine errors in the manufacture of the pattern structure, and controlling a lithography tool based on the analysis of the feature edge positions.

Abstract: An edge detection system is provided that generates a scanning electron microscope (SEM) linescan image of a pattern structure including a feature with edges that require detection. The edge detection system includes an inverse linescan model tool that receives measured linescan information for the feature from the SEM. In response, the inverse linescan model tool provides feature geometry information that includes the position of the detected edges of the feature.

Abstract: In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.

Abstract: In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, calibrating, using unbiased measurement data, the model to a specific lithography process, patterning process, or both to generate a calibrated model, using the calibrated model to predict the low-probability stochastic defect; and modifying, based on the low-probability stochastic defect, a variable, parameter, setting, or some combination of a manufacturing process of a device.