Patents by Inventor Chris Mack
Chris Mack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7804994Abstract: An overlay method for determining the overlay error of a device structure formed during semiconductor processing is disclosed. The overlay method includes producing calibration data that contains overlay information relating the overlay error of a first target at a first location to the overlay error of a second target at a second location for a given set of process conditions. The overlay method also includes producing production data that contains overlay information associated with a production target formed with the device structure. The overlay method further includes correcting the overlay error of the production target based on the calibration data.Type: GrantFiled: February 13, 2003Date of Patent: September 28, 2010Assignee: KLA-Tencor Technologies CorporationInventors: Michael Adel, Mark Ghinovker, Elyakim Kassel, Boris Golovanevsky, John C. Robinson, Chris A. Mack, Jorge Poplawski, Pavel Izikson, Moshe Preil
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Patent number: 7656512Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: GrantFiled: April 11, 2008Date of Patent: February 2, 2010Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack
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Patent number: 7566517Abstract: Methods and apparatus, including computer program products, implementing and using techniques for optimizing feature printability on a semiconductor wafer. A reticle with a quasi-periodic structure is provided. The quasi-periodic structure includes several elements that each contribute to the printed feature to be printed on the wafer. Each element exhibits a slight variation in a reticle feature characteristic compared to an adjacent other element in the quasi-periodic structure. The reticle with the quasi-periodic structure is used to print several printed features on the semiconductor wafer. Each printed feature corresponds to a specific element in the quasi-periodic structure. A metrology process is performed on the semiconductor wafer to generate a signature for each of the printed features. The signature is used to determine an optimum reticle feature characteristic that results in an optimum printed feature.Type: GrantFiled: November 9, 2005Date of Patent: July 28, 2009Assignee: KLA-Tencor Technologies Corp.Inventors: Michael E. Adel, Chris A. Mack
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Publication number: 20090117491Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.Type: ApplicationFiled: August 27, 2008Publication date: May 7, 2009Applicant: Applied Materials, Inc.Inventors: Rudolf Hendel, Zhilong Rao, Kuo-Shih Liu, Chris A. Mack, John S. Petersen, Shane Palmer
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Patent number: 7528953Abstract: In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength ? towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, ?, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.Type: GrantFiled: February 27, 2006Date of Patent: May 5, 2009Assignee: KLA-Tencor Technologies Corp.Inventors: Aviv Frommer, Vladimir Levinski, Mark D. Smith, Jeffrey Byers, Chris A. Mack, Michael E. Adel
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Publication number: 20090111056Abstract: Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.Type: ApplicationFiled: August 27, 2008Publication date: April 30, 2009Applicant: Applied Materials, Inc.Inventors: Rudolf Hendel, Zhilong Rao, Kuo-Shih Liu, Chris A. Mack, John S. Petersen, Shane Palmer
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Publication number: 20080192221Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: ApplicationFiled: April 11, 2008Publication date: August 14, 2008Applicant: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack
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Patent number: 7382447Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: GrantFiled: June 26, 2002Date of Patent: June 3, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Thaddeus G. Dziura, Ady Levy, Chris A. Mack
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Patent number: 7368208Abstract: Methods and apparatus for producing a semiconductor. A production reticle having a pattern that includes circuit features, phase shift target structures and overlay target structures is provided. The pattern is transferred multiple times across a test wafer surface for various focus levels to form a focus matrix. The pattern shift of the phase shift target structures is measured using an overlay metrology tool. The phase difference is calculated for each phase shift target structure, based on the pattern shift and the phase shift target structure focus level to qualify the phase difference of the production reticle. The pattern is transferred onto a production wafer when the phase difference meets desired limits. The pattern shift of the overlay target structures transferred to the production wafer is measured using an overlay metrology tool. The pattern placement error of the overlay target structures is calculated and the pattern placement error is qualified.Type: GrantFiled: May 24, 2006Date of Patent: May 6, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Michael Adel, Mark Ghinovker, Chris A. Mack
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Patent number: 7352453Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.Type: GrantFiled: January 17, 2004Date of Patent: April 1, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Chris A. Mack, Matt Hankinson
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Patent number: 7303842Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.Type: GrantFiled: March 31, 2006Date of Patent: December 4, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Sterling G. Watson, Ady Levy, Chris A. Mack, Stanley E. Stokowski, Zain K. Saidin, Larry S. Zurbrick
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Patent number: 7300725Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.Type: GrantFiled: March 29, 2006Date of Patent: November 27, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Sterling G. Watson, Ady Levy, Chris A. Mack, Stanley E. Stokowski, Zain K. Saidin
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Patent number: 7300729Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may “heal” the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.Type: GrantFiled: March 29, 2006Date of Patent: November 27, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Sterling G. Watson, Ady Levy, Chris A. Mack, Stanley E. Stokowski, Zain K. Saidin
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Patent number: 7297453Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.Type: GrantFiled: March 31, 2006Date of Patent: November 20, 2007Assignee: KLA-Tencor Technologies CorporationInventors: Sterling G. Watson, Ady Levy, Chris A. Mack, Stanley E. Stokowski, Zain K. Saidin
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Patent number: 7142941Abstract: A computer-implemented method and a storage medium adapted to identify potential causes of lithography process failure or drift is provided.Type: GrantFiled: October 7, 2005Date of Patent: November 28, 2006Assignee: KLA-Tencor Technologies Corp.Inventors: Chris Mack, Robert Jones, Jeffrey Byers
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Publication number: 20060240336Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.Type: ApplicationFiled: March 31, 2006Publication date: October 26, 2006Inventors: Sterling Watson, Ady Levy, Chris Mack, Stanley Stokowski, Zain Saidin
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Publication number: 20060234145Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.Type: ApplicationFiled: March 29, 2006Publication date: October 19, 2006Inventors: Sterling Watson, Ady Levy, Chris Mack, Stanley Stokowski, Zain Saidin
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Publication number: 20060234139Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.Type: ApplicationFiled: March 31, 2006Publication date: October 19, 2006Inventors: Sterling Watson, Ady Levy, Chris Mack, Stanley Stokowski, Zain Saidin, Larry Zurbrick
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Publication number: 20060234144Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may “heal” the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.Type: ApplicationFiled: March 29, 2006Publication date: October 19, 2006Inventors: Sterling Watson, Ady Levy, Chris Mack, Stanley Stokowski, Zain Saidin
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Publication number: 20060197951Abstract: In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength ? towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, ?, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.Type: ApplicationFiled: February 27, 2006Publication date: September 7, 2006Inventors: Aviv Frommer, Vladimir Levinski, Mark Smith, Jeffrey Byers, Chris Mack, Michael Adel