Abstract: The invention relates to the torsion springs for micromechanical applications. They can be used if elements are to be pivoted about an axis in an oscillating fashion. According to the object which is set, the torsion springs are to have an improved linear spring characteristic. The torsion springs according to the invention have a square, rectangular or trapezoidal cross section. A slot which is oriented orthogonally with respect to the longitudinal axis of the torsion spring and another slot which is formed in the torsion spring along its longitudinal axis and which opens into the first slot are formed at a clamping end point.

Abstract: The invention relates to a micro-optical arrangement with which in particular optical properties of an optical element or its influencing of electromagnetic radiation may be changed. Thereby the optical elements with a reflecting surface are preferred. It is the object of the invention to provide for a changeability of optical parameters, in particular of the focal width with small time constants, in an inexpensive manner and with a small required constructional volume. The micro-optical arrangement according to the invention comprises a plate-like optical element onto which electromagnetic radiation is directed on an optically effective surface. The optical element thereby is fixed or clamped at least at one outer edge point. The optical element is elastically deformed due to mass inertia as a result of a translatory movement at least approximately parallel to the optical axis between two reversal points (?z0, z0).

Abstract: An acceleration sensor comprises a mass, which can be deflected in a first direction and a second direction opposite to the first direction, a driver effective to vibrate the mass, a detector for detecting times when the mass passes a predetermined position when an acceleration is applied, and an evaluator which detects the acceleration based on the detected times during acceleration and times when the mass passes the predetermined position when no acceleration is applied. Thereby, it is achieved that the acceleration is detected inexpensively and accurately.

Abstract: A micromechanical element described includes a vibrating system having a vibrating body and an elastic suspension by means of which the vibrating body is suspended to be able to vibrate, and an adjuster for adjusting a resonant frequency of the vibrating system by applying a voltage difference between at least one part of the vibrating body and at least one stationary electrode.

Abstract: An acceleration sensor comprises a mass, which can be deflected in a first direction and a second direction opposite to the first direction, a driving means effective to vibrate the mass, a detection means for detecting times when the mass passes a predetermined position when an acceleration is applied, and an evaluation means which detects the acceleration based on the detected times during acceleration and times when the mass passes the predetermined position when no acceleration is applied. Thereby, it is achieved that the acceleration is detected inexpensively and accurately.

Abstract: A two-step etch process is used to form a vertical collar oxide within the upper portion of a trench capacitor. The first step uses CF4/SiF4/O2 chemistry and ends when the bottom of the collar within the trench is opened although a thin oxide layer still remains on the surface of the PAD-nitride. The second etch step uses C4F8 chemistry to completely remove the remaining silicon oxide layer. The process provides a good uniformity in thickness of the PAD-nitride layer and sufficient collar oxide thickness in the very top section of the collar oxide. The process is applicable for manufacturing deep trench capacitors for DRAM devices.

Abstract: A two-step etch process is used to form a vertical collar oxide within the upper portion of a trench capacitor. The first step uses CF4/SiF4/O2 chemistry and ends when the bottom of the collar within the trench is opened although a thin oxide layer still remains on the surface of the PAD-nitride. The second etch step uses C4F8 chemistry to completely remove the remaining silicon oxide layer. The process provides a good uniformity in thickness of the PAD-nitride layer and sufficient collar oxide thickness in the very top section of the collar oxide. The process is applicable for manufacturing deep trench capacitors for DRAM devices.