Patents by Inventor Christian Dussarrat

Christian Dussarrat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160194755
    Abstract: Manganese-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The manganese-containing film forming compositions comprise silylamide-containing precursors, particularly {Mn[N(SiMe2Et)2]2}2.
    Type: Application
    Filed: December 31, 2015
    Publication date: July 7, 2016
    Inventors: Stefan WIESE, Satoko GATINEAU, Christian DUSSARRAT, Jean-Marc GIRARD, Nicolas BLASCO
  • Patent number: 9384963
    Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: July 5, 2016
    Assignee: American Air Liquide, Inc.
    Inventors: Venkateswara R. Pallem, Christian Dussarrat, Wontae Noh
  • Patent number: 9371338
    Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: June 21, 2016
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Publication number: 20160152640
    Abstract: Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L1, L2, L3 and L4 is independently selected from oxygen or nitrogen atoms; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; L3 and L4 are joined together via a carbon bridge having one to three carbon atoms; L1, L2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L3, L4 and the carbon bridge form a monoanionic ligand bonded to silicon.
    Type: Application
    Filed: July 18, 2014
    Publication date: June 2, 2016
    Inventors: Glenn KUCHENBEISER, Christian DUSSARRAT, Venkateswara R. PALLEM
  • Publication number: 20160115588
    Abstract: Cobalt-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The cobalt-containing film forming compositions comprise silylamide-containing precursors, particularly Co[N(SiMe3)2]2(NMe2Et) and/or Co[N(SiMe3)2]2(NMeEt2).
    Type: Application
    Filed: December 31, 2015
    Publication date: April 28, 2016
    Inventors: Satoko GATINEAU, Mikiko KIMURA, Christian DUSSARRAT, Jean-Marc GIRARD, Nicolas BLASCO
  • Publication number: 20150294880
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Application
    Filed: October 30, 2013
    Publication date: October 15, 2015
    Inventors: Curtis ANDERSON, Rahul GUPTA, Vincent M. OMARJEE, Nathan STAFFORD, Christian DUSSARRAT
  • Patent number: 9121093
    Abstract: Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: September 1, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Clément Lansalot-Matras, Vincent M. Omarjee, Andrey V. Korolev
  • Patent number: 9103019
    Abstract: Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one ?-diketiminato ligand, and has the general formula: M(R1C(NR4)CR2C(NR5)R3)2Ln wherein M is a metal selected from nickel, cobalt, ruthenium, iridium, palladium, platinum, silver and gold. Each of R1-5 is an organic ligand independently selected from H; and a C1-C4 linear or branched, alky group, alkylsilyl group, alkylamide group, alkoxide group, or alkylsilylamide group. Each L is independently selected from: a hydrocarbon; an oxygen-containing hydrocarbon; an amine; a polyamine; a bipyridine; an oxygen containing heterocycle; a nitrogen containing heterocycle; and combinations thereof; and n is an integer ranging from 0 to 4, inclusive. A metal containing film is deposited onto the substrate, while the substrate is maintained at a temperature between about 100° C.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: August 11, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Benjamin J. Feist
  • Patent number: 9087690
    Abstract: Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: July 21, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Venkateswara R. Pallem, Christian Dussarrat
  • Patent number: 9076648
    Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: July 7, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Venkateswara R. Pallem, Christian Dussarrat
  • Publication number: 20150176120
    Abstract: Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.
    Type: Application
    Filed: December 23, 2014
    Publication date: June 25, 2015
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT
  • Patent number: 9064694
    Abstract: A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: June 23, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Steven P Consiglio, Robert D Clark, Christian Dussarrat, Vincent Omarjee, Venkat Pallem, Glenn Kuchenbeiser
  • Publication number: 20150166577
    Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Application
    Filed: July 19, 2013
    Publication date: June 18, 2015
    Inventors: Christian Dussarrat, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Publication number: 20150166576
    Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
    Type: Application
    Filed: July 19, 2013
    Publication date: June 18, 2015
    Inventors: Christian Dussarrat, Glenn Kuchenbeiser, Venkateswara R. Pallem
  • Patent number: 9045509
    Abstract: Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: June 2, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, Vincent M. Omarjee, Venkateswara R. Pallem
  • Publication number: 20150110958
    Abstract: Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
    Type: Application
    Filed: December 23, 2014
    Publication date: April 23, 2015
    Inventors: Clement LANSALOT-MATRAS, Julien LIEFFRIG, Hana ISHII, Christian DUSSARRAT
  • Patent number: 8999734
    Abstract: Disclosed herein are mono-functional silylating compounds that may exhibit enhanced silylating capabilities. Also disclosed are method of synthesizing and using these compounds. Finally methods to determine effective silylation are also disclosed.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: April 7, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: James J. F. McAndrew, Curtis Anderson, Christian Dussarrat
  • Patent number: 8974758
    Abstract: Disclosed is a process to purify COS and remove H2S without hydrolyzing or trapping the desired COS product.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: March 10, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Asli Ertan, Nathan Stafford, Christian Dussarrat, Dmitri Znamensky
  • Patent number: 8932674
    Abstract: Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: January 13, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, François Doniat, Curtis Anderson, James J. F. McAndrew
  • Patent number: RE45839
    Abstract: Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: January 12, 2016
    Assignee: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventor: Christian Dussarrat