Abstract: A self-propelled earth working machine includes a machine frame, a working apparatus, at least one function apparatus, a drive system including first and second motors, a function transmission and a working transmission. The working transmission is configured to transmit torque between the drive system and the working apparatus. The working transmission connects the first motor and the second motor to the working apparatus for the transmission of torque such that the working apparatus may be driven to perform the earth working movement solely by the first motor or solely by the second motor or jointly by the first and second motors, wherein the working transmission connects the first motor to the working apparatus at a first transmission ratio and connects the second motor to the working apparatus at a second transmission ratio different from the first transmission ratio.

Abstract: The invention relates to a composting device for providing compost material from organic material, comprising a drying chamber for receiving organic material to be composted, a heating device located on the drying chamber for heating the organic material located in the drying chamber, a control device for controlling and/or regulating the heating device, and a composting chamber, which is connected to the drying chamber via an opening for material transfer and in which the organic material that has been dried in the drying chamber can be converted into compost material. The invention further relates to a method for providing compost material.

Abstract: An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.

Abstract: An opto-isolator is provided that is designed for optically interconnecting devices that are mounted on multiple PCBs. The opto-isolator is particularly well suited for arrangements where the PCB-to-PCB distance is very small. In such cases, using an optical fiber as the optical waveguide can result in the optical fiber being bent beyond its minimum bend radius, resulting in damage to the optical fiber and/or performance problems due to attenuation of the optical signal. The opto-isolator includes first and second generally rigid structures that engage one another with an alignment tolerance that ensures proper board-to-board alignment while also facilitating the ease with which the alignment process can be performed. Once the first and second generally rigid structures are in engagement with one another, they form a generally rigid optical waveguide structure for coupling light from an optical transmitter of one of the PCBs onto an optical receiver of the other PCB.

Abstract: An optical element has an optical body and a number of microstructures. The optical body takes the form of a half-shell and has an inner face and an outer face. The microstructures form the inner and/or outer face of the optical body at least in places and are light-scattering refractive structures. The invention further relates to a radiation-emitting device having at least one semiconductor component and one such optical element.

Abstract: A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Abstract: A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract: An optoelectronic component comprises: at least one semiconductor chip suitable for generating electromagnetic radiation, a beam shaping element (1), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (2), and which has an outer contour (5) with respect to a coordinate system (3, 4) perpendicular to the optical axis (2), wherein the contour (5) constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a1, a2) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a1, a2): an ellipse segment (b1), a linear part (c1) a second ellipse segment (d), a further linear part (c2) and a third ellipse segment (b2).

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.

Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).

Abstract: A lighting device may include: a rod-shaped carrier body with at least one first and one second mounting side and a main direction of extent, first semiconductor light-emitting elements on first mounting faces of the first mounting side, and second semiconductor light-emitting elements on second mounting faces of the second mounting side, wherein the first and the second mounting sides face away from one another, wherein the mounting faces are formed by depressions in the mounting sides, which depressions are arranged so as to be spaced apart along the main direction of extent, and wherein the first semiconductor light-emitting elements are identical to one another and the second semiconductor light-emitting elements are identical to one another.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Abstract: A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).

Abstract: A mixed light source has a first semiconductor component, which is provided for generating a first radiation fraction, and a second semiconductor component, which is provided for generating radiation of a second radiation fraction different from the first radiation fraction. The first semiconductor component is mounted by a first mounting point on a first heat sink with a first thermal resistance R1. The second semiconductor component is mounted by a second mounting point on a second heat sink with a second thermal resistance R2. The thermal resistances R1 and R2 are different from one another.

Abstract: In an example embodiment a sender report containing multiple rows and/or columns of information drawn from a data table may be displayed to a user of a machine. A user may select a portion of the displayed information. A sender adaptor may extract report-to-report selection criteria from the selected information. A receiver adaptor may identify other data tables where information related to the report-to-report selection criteria resides. If such information resides in multiple data tables, the receiver adaptor may join the multiple data tables into one or more data tables. The receiver adaptor may convert the report-to-report selection criteria into selection criteria for the identified data table(s) or joined data table(s). The selection criteria may be passed to a generic receiver report adapted to retrieve any information from any data table(s). The generic receiver report may retrieve information according to the selection criteria and display the information to the user.