Abstract: An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Abstract: An optoelectronic component comprises:—at least one semiconductor chip suitable for generating electromagnetic radiation,—a beam shaping element (1), through which at least part of the electromagnetic radiation emitted by the semiconductor chip during operation passes and which has an optical axis (2), and which has an outer contour (5) with respect to a coordinate system (3, 4) perpendicular to the optical axis (2), wherein the contour (5) constitutes a curve (n) that is mirror-symmetrical with respect to both central axes (a1, a2) of an ellipse (e) inscribed by the contour, wherein the following succeed one another in each of the four identical sections between the respective central axes (a1, a2): an ellipse segment (b1), a linear part (c1) a second ellipse segment (d), a further linear part (c2) and a third ellipse segment (b2).

Abstract: An optoelectronic semiconductor component, includes at least two optoelectronic semiconductor chips, which are located on a common mounting surface. An optical element is arranged downstream of the semiconductor chips in a main emission direction and is spaced from the semiconductor chips. In a direction transverse to the main emission direction the optical element has a transmission gradient in a transitional region. The transitional region does not overlap the semiconductor chips, when viewed in plan view onto the mounting surface.

Abstract: In at least one embodiment, the ring light module (1) comprises a plurality of optoelectronic semiconductor components (2) for producing electromagnetic radiation (R). A reflector (3) of the ring light module (1) comprises a reflective surface (30). The semiconductor components (2) are mounted on a support (4). Viewed in plan view of a main radiation side (45) of the ring light module (1), the reflector (3) comprises at most two planes of symmetry. The reflector (3) tapers in the direction towards the main radiation side (45). At least some of the main emission directions (20) of adjacent semiconductor components (2) are oriented differently from each other. The main emission directions (20) point towards the reflective surface (30).

Abstract: The present invention relates to an arrangement for emitting mixed light comprising at least three diodes, comprising a first drive circuit supplying the first diode with current via a first channel, wherein the first diode is of type A, wherein type A represents a diode configured to emit green and/or green-white light, wherein the drive circuit supplies the series-connected second and third diodes with current via a second channel, wherein the second diode is of type B, wherein type B represents a diode configured to emit red light, wherein the third diode is of type C, wherein type C represents a diode configured to emit blue and/or blue-white light, wherein the drive circuit is configured to change, depending on an operating parameter of at least one diode, the current supply for the first and/or second channel so as to counteract a colour locus shift of a diode.

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract: A light-emitting device includes at least one first light-emitting semiconductor component, which radiates red light during operation, at least one second light-emitting semiconductor component having a wavelength conversion element, and at least one third light-emitting semiconductor component having a wavelength conversion element. The second and third light-emitting semiconductor components each radiate blue primary light and converted secondary light and the respective superposition of the primary light and the secondary light of the second and third light-emitting semiconductor components has different chromaticity coordinates.

Abstract: In an example embodiment a sender report containing multiple rows and/or columns of information drawn from a data table may be displayed to a user of a machine. A user may select a portion of the displayed information. A sender adaptor may extract report-to-report selection criteria from the selected information. A receiver adaptor may identify other data tables where information related to the report-to-report selection criteria resides. If such information resides in multiple data tables, the receiver adaptor may join the multiple data tables into one or more data tables. The receiver adaptor may convert the report-to-report selection criteria into selection criteria for the identified data table(s) or joined data table(s). The selection criteria may be passed to a generic receiver report adapted to retrieve any information from any data table(s). The generic receiver report may retrieve information according to the selection criteria and display the information to the user.

Abstract: A mixed light source has a first semiconductor component, which is provided for generating a first radiation fraction, and a second semiconductor component, which is provided for generating radiation of a second radiation fraction different from the first radiation fraction. The first semiconductor component is mounted by a first mounting point on a first heat sink with a first thermal resistance R1. The second semiconductor component is mounted by a second mounting point on a second heat sink with a second thermal resistance R2. The thermal resistances R1 and R2 are different from one another.

Abstract: An optoelectronic assembly includes a carrier, an optoelectronic component arranged on the carrier, wherein the optoelectronic component includes a substrate and a light-emitting layer arranged on the substrate, and a light-reflecting first encapsulation at least locally covers a region of the carrier surrounding the optoelectronic component and side surfaces of the optoelectronic component.

Abstract: A lighting device has a carrier with a mounting face. A number of light-emitting diodes include at least two of the light-emitting diodes suitable for emitting light of different colors during operation. At least one color sensor, during operation, detects the light of at least one of the light-emitting diodes. At least one light-measuring face is illuminated by light of at least one of the light-emitting diodes and reflects and/or scatters at least a portion of this light. The light-emitting diodes and the at least one color sensor are arranged on the mounting surface, the at least one light-measuring face is arranged at a distance from the carrier, and the at least one color sensor; detects for the most part light reflected by the at least one light-measuring face from at least one of the multiplicity of light-emitting diodes.

Abstract: Various embodiments herein include at least one of systems, methods, and software for automated data interface generation to facilitate data reporting and analysis performance against data in a transaction data environment from another computing environment. One such embodiment includes receiving input identifying at least a first computing environment and a generate action input. Such embodiments further include, in response to receiving the input, automatically identifying data of the portion of the first computing environment to be accessed by the processes of a second computing environment. Based on the identified data, some embodiments may then generate and store a dataset that maps between at least some data elements of the second computing environment and at least some respective data elements in the first computing environment. These and other embodiments are illustrated and described herein.

Abstract: A lighting device may include: a rod-shaped carrier body with at least one first and one second mounting side and a main direction of extent, first semiconductor light-emitting elements on first mounting faces of the first mounting side, and second semiconductor light-emitting elements on second mounting faces of the second mounting side, wherein the first and the second mounting sides face away from one another, wherein the mounting faces are formed by depressions in the mounting sides, which depressions are arranged so as to be spaced apart along the main direction of extent, and wherein the first semiconductor light-emitting elements are identical to one another and the second semiconductor light-emitting elements are identical to one another.

Abstract: A lighting module for emitting mixed light comprises at least one first semiconductor element which emits unconverted red light, at least one second semiconductor element which emits converted greenish white light having a first conversion percentage, at least one third semiconductor element which emits greenish white light having a second conversion percentage that is smaller than the first conversion percentage, and at least one resistor element having a temperature-dependent electric resistance, the second semiconductor element being connected in parallel to the third semiconductor element.

Abstract: An optical element has an optical body and a number of microstructures. The optical body takes the form of a half-shell and has an inner face and an outer face. The microstructures form the inner and/or outer face of the optical body at least in places and are light-scattering refractive structures. The invention further relates to a radiation-emitting device having at least one semiconductor component and one such optical element.

Abstract: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Abstract: A method for producing a light-emitting semiconductor component is specified. A light-emitting semiconductor chip is arranged on a mounting area of a carrier. The semiconductor chip is electrically connected to electrical contact regions on the mounting area. An encapsulation layer is applied to the semiconductor chip by means of atomic layer deposition. All surfaces of the semiconductor chip which are free after mounting and electrical connection are covered with an encapsulation layer. Furthermore, a light-emitting semiconductor component is specified.