Abstract: A system for transmitting a value via a pulse-width-modulated signal, comprises a transmitter and a receiver. The transmitter is configured for detecting the value and for outputting a pulse-width-modulated signal having a pulse width which represents the value or a range around the value. The receiver is configured for deriving the value or the range from the pulse-width-modulated signal, by evaluating the pulse width. The transmitter is furthermore configured to read back the emitted pulse-width-modulated signal and to check whether the value or the range can be derived from the emitted pulse-width-modulated signal, and, if the value or the range cannot be derived, to output an error signal to the receiver.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Abstract: A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy characteristic forming an implant zone within the epitaxial layer, so that the ions are implanted with an average depth within the epitaxial layer corresponding to a designated thickness of an epitaxial layer of the silicon carbide substrate to be manufactured. Furthermore, the method comprises bonding an acceptor wafer onto the epitaxial layer so that the epitaxial layer is arranged between the dispenser wafer and the acceptor wafer. Further, the epitaxial layer is split along the implant zone so that a silicon carbide substrate represented by the acceptor wafer with an epitaxial layer with the designated thickness is obtained.

Abstract: A system for transmitting a value via a pulse-width-modulated signal, comprises a transmitter and a receiver. The transmitter is configured for detecting the value and for outputting a pulse-width-modulated signal having a pulse width which represents the value or a range around the value. The receiver is configured for deriving the value or the range from the pulse-width-modulated signal, by evaluating the pulse width. The transmitter is furthermore configured to read back the emitted pulse-width-modulated signal and to check whether the value or the range can be derived from the emitted pulse-width-modulated signal, and, if the value or the range cannot be derived, to output an error signal to the receiver.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

Abstract: A composite material, in particular for use in a transformer comprising a first and a second grain-oriented electric strip layer and a polymeric layer arranged therebetween is disclosed. The polymeric layer includes a crosslinked acrylate-based copolymer of high molecular weight and has a layer thickness in the range from 3 to 10 ?m.

Abstract: A method for operating a brake of a motor vehicle with at least one electronic brake signal generator and with at least one brake control device for actuating the brake based on a brake signal of the brake signal generator includes transmitting the brake signal to the brake control device. The method additionally includes transmitting an actuation of the brake signal generator as a brake signal to the brake control device in addition to a brake pressure value.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

Abstract: A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Abstract: A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Abstract: A method for operating a brake of a motor vehicle with at least one electronic brake signal generator and with at least one brake control device for actuating the brake based on a brake signal of the brake signal generator includes transmitting the brake signal to the brake control device. The method additionally includes transmitting an actuation of the brake signal generator as a brake signal to the brake control device in addition to a brake pressure value.

Abstract: Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.

Abstract: A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

Abstract: A method is used to produce a grain-oriented electrical steel strip having optimized magnetic properties. The method may utilize a steel comprising in percent by weight 2.0-4.0% Si, 0.010-0.100% C, at most 0.065% Al, at most 0.02% N, and optionally further constituents, the balance being iron and unavoidable impurities. The steel may be processed to give a cold strip, which may then be subjected to oxidation/primary recrystallization annealing. The resultant cold strip may have an oxide layer to which an annealing separator layer is applied. In a subsequent high-temperature anneal, a forsterite layer forms therefrom, and an insulation layer may be applied thereto prior to a final anneal.

Abstract: Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.

Abstract: The present invention provides a method for the redundant measurement of the duty factor of pulse-with-modulated signals 12 via a vehicle control unit. According to the method, a direct determination of the duty factor of the signal 12 is performed by way of periodic sampling.

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.