Abstract: A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region.

Abstract: Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers.

Abstract: A semiconductor device includes a semiconductor body having a first surface, a contact electrode on the first surface, and a passivation layer on the first surface adjacent the contact electrode and partially overlapping the contact electrode. The passivation layer comprises a layer stack with a first layer comprising an oxide on the first surface, and a second layer comprising a nitride on the first layer.

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer having a first conductivity type and a buried lateral silicon carbide edge termination region within the epitaxial silicon carbide layer and having a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including a doping of ions of a transition metal or including an increased density of intrinsic point defects in comparison to a density of intrinsic point defects of the buried lateral silicon carbide edge termination region.

Abstract: A substrate-treatment installation includes a vacuum chamber, a substrate treatment device within the vacuum chamber, a substrate transport device within the vacuum chamber for guiding a substrate along a longitudinal direction in a substrate transport plane past the substrate treatment device, and a device for controlling substrate temperature. The substrate temperature controlling device includes a heat-absorbing cooler on one side of the substrate transport plane and an insulation member selectively displaceable between at least two different positions to vary extent of thermal shielding of the heat-absorbing cooler relative to the substrate transport plane by the insulation member.

Abstract: A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type.

Abstract: A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Abstract: A method for manufacturing a silicon carbide substrate for an electrical silicon carbide device includes providing a silicon carbide dispenser wafer including a silicon face and a carbon face and depositing a silicon carbide epitaxial layer on the silicon face. Further, the method includes implanting ions with a predefined energy characteristic forming an implant zone within the epitaxial layer, so that the ions are implanted with an average depth within the epitaxial layer corresponding to a designated thickness of an epitaxial layer of the silicon carbide substrate to be manufactured. Furthermore, the method comprises bonding an acceptor wafer onto the epitaxial layer so that the epitaxial layer is arranged between the dispenser wafer and the acceptor wafer. Further, the epitaxial layer is split along the implant zone so that a silicon carbide substrate represented by the acceptor wafer with an epitaxial layer with the designated thickness is obtained.

Abstract: A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.

Abstract: A surface heating device for a substrate treatment device with increased power density and improved homogeneity of heat radiation includes a jacket tube heater with straight tube sections and bent tube sections in which straight tube sections are arranged parallel to each other in a main plane and straight tube sections are connected to each other by bent tube sections, so that at least part of the bent tube sections are aligned sloped relative to the main plane.

Abstract: A method is provided for depositing a transparent conductive oxide (TCO) layer on a substrate, in which contaminations of the layers of the layer system is reduced through the diffusion of material from the substrate, and whose layer properties in respect to coupling and transmission of light are optimized. For that purpose, a barrier layer, a seed layer and a transparent conductive oxide layer are directly successively deposited on the substrate. Also, a thin-film solar cell is described which comprises such a transparent conductive oxide layer.

Abstract: A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.

Abstract: A surface heating device for a substrate treatment device with increased power density and improved homogeneity of heat radiation includes a jacket tube heater with straight tube sections and bent tube sections in which straight tube sections are arranged parallel to each other in a main plane and straight tube sections are connected to each other by bent tube sections, so that at least part of the bent tube sections are aligned sloped relative to the main plane.

Abstract: A highly efficient getter pump with low maintenance requirements is applied to a vacuum coating installation, allowing a substrate to be coated to remain uncontaminated by a dusting of getter material. The getter pump comprises a pump housing with an exposure opening. The housing has a getter body, of getter material that essentially closes the exposure opening and can move in relation to the exposure opening. An inner sub-section of the surface of the getter body points towards the interior of the pump housing and an outer sub-section points towards the exterior of the pump housing through the exposure opening. The positions of the inner and outer sub-sections are interchangeable by movement of the getter body. The getter pump is equipped with a device for removing getter material from the inner sub-section.

Abstract: A device for controlling the temperature of substrates in a substrate-treatment system, in which a substrate can be guided in the longitudinal extension of the substrate-treatment system in a substrate transport plane within a vacuum chamber past a treatment device, solves the problem of dynamically shaping a dynamic change of the thermal insulation to control the heat transfer in the substrate and thereby, reduce, in particular, thermal inertias by providing a heat-absorbing cooler side of the substrate transport plane. The heat-absorbing cooler can be shielded, at least partially from the substrate transport plane, using an insulation member.

Abstract: A sluice system for a vacuum coating facility for coating substrates that can be moved through the vacuum coating in a direction of conveyance comprises a prevacuum slice chamber and a transfer chamber adjoining a coating chamber, wherein a fine vacuum can be regulated before the transfer chamber on the input side in the direction of conveyance and after the transfer device on the output side in the direction of conveyance. The prevacuum sluice chamber is directly adjacent to the transfer chamber and the fine vacuum can be regulated in the prevacuum sluice chamber. A high-vacuum pump system can also alternatively and selectively be connected to the prevacuum sluice chamber.

Abstract: A vacuum coating unit having a pair of side by side transport devices for transporting substrates in a transport direction. Each transport device includes at least one first endless conveyor running in the transport direction and having a conveying element guided around at least two guide rollers or pulleys. The conveying element is located at a distance from a guide device extending in the transport direction parallel to the conveying element in such a way that the ends of the substrates can be introduced into the gap between the conveying element and the guide device of the transport devices and can be moved in the transport direction by the displacement of the conveying elements.

Abstract: A thin-film solar cell includes a front-side glass substrate, a front contact arranged above the glass substrate, an absorber arranged above the front contact, and a rear contact arranged above the absorber. A TCO layer system composed of an intrinsic TCO layer deposited above the substrate and a doped TCO layer arranged thereabove is provided, as well as a method for producing such a thin-film solar cell. Improved transmission, reflection and absorption properties of the TCO layer is achieved by composing the TCO layer of a first doped TCO sublayer deposited directly on the intrinsic TCO layer, and a second doped TCO sublayer deposited directly on the first doped TCO sublayer.