Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment a method include providing a semiconductor layer sequence having an active region and a plurality of emission regions, forming a plurality of first contact points, filling spacings between the first contact points with a molding compound, removing a growth substrate of the semiconductor layer sequence and arranging the semiconductor layer sequence on a connection carrier comprising a control circuit and a plurality of connection surfaces, wherein each of the first contact points is electrically conductively connected to a connection surface, wherein the emission regions are independently controllable by the control circuit, and wherein the molding compound serves as a temporary auxiliary carrier that mechanically stabilizes the semiconductor layer sequence during the removal of the growth substrate.

Abstract: A method of manufacturing an optoelectronic semiconductor chip includes a) providing a semiconductor layer sequence having an active region that generates or receives radiation on a substrate; b) forming at least one recess extending through the active region; c) forming a metallic reinforcement layer on the semiconductor layer sequence by galvanic deposition, the metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess; and d) removing the substrate, wherein the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer (10) is designed to produce or absorb electromagnetic radiation in intended operation. Furthermore, the component (100) comprises a first contact structure (11) and a second structure (12), by means of which the semiconductor layer sequence (1) can be electrically contacted in intended operation. In operation, a voltage is applied to the contact structures (11, 12), wherein an operation-related voltage difference ?Ubet between the contact structures (11, 12) arises. When the voltage difference is increased, a first arc-over occurs in or on the component (100) between the two contact structures (11, 12). A spark gap (3) between the contact structures (11, 12), which arises in the event of the first arc-over, passes predominantly through a surrounding medium in the form of gas or vacuum and/or through a potting.

Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.

Abstract: A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. The component further includes a semiconductor body and a wiring structure arranged in the vertical direction between the carrier and the semiconductor body at least places and electrically contacting the semiconductor body, wherein the wiring structure has a first connection area and a second connection area, wherein the connection areas adjoin the carrier and are assigned to different electrical polarities of the component, wherein the first through-contact is in electrical contact with one of the connection areas, and wherein the component is configured to be externally electrically connectable via the carrier.

Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.

Abstract: A semiconductor component may have a semiconductor body, an electrically conductive carrier layer, and an electrically poorly conductive insulation. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. The insulation may be located between the carrier layer and the semiconductor body and covers at least part of the second main face and extends up to at least one lateral face of the semiconductor body.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, two contact elements on a back side of the semiconductor layer sequence, a radiolucent cooling element on a front side of the semiconductor layer sequence opposite the back side, and a siloxane-containing converter layer between the cooling element and the semiconductor layer sequence, wherein the contact elements are configured for electrical contacting of the semiconductor chip and are exposed in the unmounted state of the semiconductor chip, the cooling element is different from a growth substrate of the semiconductor layer sequence, and the cooling element has a thermal conductivity of at least 0.7 W/(m·K).

Abstract: An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8A) connects the second via (12) to the n-type semiconductor region (5); and an ESD protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the ESD protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forwar

Abstract: A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.

Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

Abstract: A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.

Abstract: An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.

Abstract: A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.

Abstract: A video wall module and a method for producing a video wall module are disclosed. In embodiments, the video wall module includes a plurality of light emitting diode chips, each light emitting diode chip comprising a top electrode arranged at a top side of the light emitting diode chip, a bottom electrode arranged at a bottom side of the light emitting diode chip and a molded body embedding the light emitting diode chips, a front-side metallization arranged at the front side of the molded body, wherein the top electrodes are connected to the front-side metallization, a rear-side metallization arranged at a rear side of the molded body, wherein the bottom electrodes are connected to the rear-side metallization, a dielectric layer arranged at the rear side of the molded body and an outer metallization arranged at the dielectric layer, wherein the rear-side metallization is electrically conductively connected to the outer metallization.

Abstract: An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.

Abstract: A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling surface, a rear face on an opposite side of the semiconductor layer sequence from the light outcoupling surface, and side faces which connect the light outcoupling surface and the rear face. The light emitting semiconductor device further includes a carrier body, having a molded body which covers the side faces of the at least one light emitting semiconductor chip directly and in a positively-locking manner. The carrier body comprises, at the light outcoupling surface of the at least one light emitting semiconductor chip, a top face on which a dielectric mirror is disposed. At least part of the light outcoupling surface is uncovered by the dielectric mirror.

Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

Abstract: A method for producing an optoelectronic component is disclosed. In an embodiment the method includes a metallization with first mask structures is deposited directionally, and then a first passivation material is deposited non-directionally onto the metallization. Further, cutouts are introduced into the semiconductor body, such that the cutouts extend right into an n-type semiconductor region, and a second passivation material is applied on side faces of the cutouts. Furthermore, an n-type contact material is applied, structured and passivated. Moreover, contact structures are arranged on the semiconductor body and electrically connected to the n-type contact material and the metallization, wherein the contact structures and the semiconductor body are covered with a potting.