Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.

Abstract: A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: In a method for determining one or more properties of a substrate, scatterometry spectra can be measured from one or more targets on the substrate. Reconstructions of each of said spectra can be performed to derive one or more values for the property of the substrate, by comparing representations of each of the measured spectra with one or more modeled representations of spectra calculated using variable parameter values. At least one parameter in the reconstruction for each spectrum can be linked to the value of the parameter used in the reconstruction for a different spectrum.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern.

Abstract: During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern.

Abstract: A plurality of targets including a second population superimposed on a first population are formed. In the first target the second population has an asymmetry with respect to the first population. In the second target the second population has a different asymmetry with respect to the first population. Reflected radiation is detected from both the targets and used to determine different characteristics of the underlying populations.

Abstract: In a method for determining one or more properties of a substrate, scatterometry spectra can be measured from one or more targets on the substrate. Reconstructions of each of said spectra can be performed to derive one or more values for the property of the substrate, by comparing representations of each of the measured spectra with one or more modeled representations of spectra calculated using variable parameter values. At least one parameter in the reconstruction for each spectrum can be linked to the value of the parameter used in the reconstruction for a different spectrum.

Abstract: The present invention relates to a method for determining parameter value related to a lithographic process by which a marker structure has been applied on a product substrate based on obtaining calibration measurement data, with an optical detection apparatus, from a calibration marker structure set on a calibration substrate, including at least one calibration marker structure created using different known values of the parameter. The method further determines a mathematical model by using said known values of said at least one parameter and by employing a regression technique on said calibration measurement data, obtains product measurement data, with said optical detection apparatus, from a product marker structure on the product substrate, with at least one product marker structure being exposed with an unknown value of said at least one parameter.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

Abstract: In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure.