Abstract: The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.

Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Abstract: A method for structuring a photoresist layer including preparing a substrate having a photoresist layer which is applied at least in subregions. The photoresist layer includes a film-forming polymer that comprises molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and a photobase generator that releases a base when irradiated with light from a defined wavelength range. The photoresist layer is irradiated in subregions with light from the defined wavelength range. The photoresist layer is brought into contact with an acid over a defined period of time, during which the acid diffuses into the photoresist layer. The photoresist layer is heated to a temperature at which the acid-catalyzed separation reaction takes place and then the photoresist layer is developed. Through the acid treatment, in the developing step a greater steepness and lower degree of roughness of the resist profiles is achieved.

Abstract: A photoresist layer structuring process includes a substrate with a photoresist layer applied thereto in parts. The photoresist layer includes a film-forming polymer having molecular groups convertable into alkali-soluble groups by acid-catalyzed cleavage reactions. The polymer includes a photoacid generator liberating an acid on exposure to light in a wavelength range, and a photobase generator liberating a base on exposure to light in a wavelength range. First, the photoresist layer is exposed to light from the second range, the light wavelength being chosen so that the photoacid generator is substantially inert to the irradiation, and is exposed to light from the first range, the light wavelength being chosen so that the photobase generator is substantially inert to the irradiation. The photoresist layer is then heated to a temperature at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

Abstract: A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range &Dgr;&lgr;1. In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range &Dgr;&lgr;2. The photoresist layer is first exposed in parts to light from the defined wavelength range &Dgr;&lgr;1, the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range &Dgr;&lgr;2, the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photobase generator that, on exposure to light from a defined wavelength range, releases a base. The polymer additionally includes a thermoacid generator that releases an acid when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the thermoacid generator releases an acid and the acid-catalyzed elimination reaction takes place. Finally, the photoresist layer is developed.

Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photoacid generator that, on exposure to light from a defined wavelength range, releases an acid. The polymer additionally has a thermobase generator that releases a base when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the elimination reaction catalyzed by the photolytically generated acid takes place and the thermobase generator releases a base. Finally, the photoresist layer is developed.

Abstract: A method structures a chemical amplification photoresist layer, in which a photoresist layer of the chemically amplified type is brought into contact, before or after the exposure for structuring, with a base which is capable of diffusing into the photoresist layer. As a result of this treatment with the base, greater steepness and less roughness of the resist profiles are achieved in the subsequent development step.

Abstract: The invention relates to a setting device for a ventilation flap (12, 12a, 2b) in an air duct, particularly in a heating and ventilation system of an automobile, with an electric motor (2) executing setting movements and with a control unit (3) for the electric motor (2). In order to minimize the outlay in terms of assembly and the replacement parts to be kept available, there is provision for designing the electric motor (2) as a stepping motor activated by output signals from a control unit (3) adjacent to this stepping motor, and the control unit (3) has encoding inputs (K1, K2) for selecting the direction of rotation and/or the rotary angle.

Abstract: In a fuel removal device including a fuel pickup pot for disposition in a vehicle fuel tank, the fuel pickup pot has integrally formed therewith two receptacles extending from the bottom of the pickup pot, one for receiving a filter with a fuel suction line and the other for receiving a fuel return line.

Abstract: The trailing end of a web of photosensitive material which is being unwound from a core in a cassette is connected to the core by an elongated strip. A monitoring device is placed adjacent the path of movement of the web from the core to the nip of two advancing rolls, and the monitoring device is activated as soon as it detects the strip. The motor for the advancing rolls is driven for an interval of time and at a speed such that, when the monitoring device detects the trailing end of the strip, the web is advanced through a predetermined distance to locate its trailing end at a splicing station where the trailing end of the web is to be spliced with the leader of a next-following web.

Abstract: A housing of a pump for an artificial heart comprises central, polar regions of rigid material where a rotatable connector for control and/or power supply conduits is located. An equatorial, peripheral region is made of flexible material. Connectors for inlet and outlet conduits are tangentially mounted to the equatorial region. A flat, torus shaped bellows of elastic material is positioned between two oppositely driven, spring loaded pressure plates and encloses the pump volume. An electromechanical displacement transducer provides signals proportional to the stroke of the pump. The pump may be operated by a liquid or gaseous pressure medium and its shape and structure are well adapted for implantation into a living organism, especially the human body.