Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A lithographic apparatus uses polarized light to improve the imaging properties, such as exposure latitude, while maintaining and extending the lifetime of an illumination system in the lithographic apparatus.

Abstract: A lithographic apparatus uses polarized light to improve the imaging properties such as exposure latitude, while maintaining and extending the lifetime of an illumination system in a lithographic apparatus.

Abstract: A system and method are used to direct a radiation beam to illuminate non-perpendicularly a patterning array of individually controllable elements used for patterning the radiation beam. The individually controllable elements can change a telecentricity of the radiation beam. Projection of the radiation beam onto the individually controllable elements can be by a concave mirror or use a folding mirror placed in an object field of the individually controllable elements. Alternatively, the individually controllable elements can change the optical axis of the radiation beam.

Abstract: To reduce and prevent local field anomalies created localized thinning of the coating of optical elements in the apparatus. The projection system is flood exposed to an intense beam of radiation for a substantial period of time. As the rate of thinning of the coating decreases with time, a uniform coating results.

Abstract: A final element of a projection system of an immersion lithographic apparatus is configured for a liquid having a refractive index greater than a refractive index of the final element. In an embodiment, the final element comprises a convex meniscus shaped lens. Such a final element enables the effective numerical aperture of the lithographic apparatus to be increased and reduce total internal reflection of the projected beam as it passes through the final element to the liquid.

Abstract: To calibrate a lithographic apparatus contrast in the aerial image is measured for a plurality of different settings of available manipulators of the projection system. Appropriate settings of the manipulators are determined as those giving the maximum contrast values.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: An arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: An optical reproduction system, which can be configured for example as a catadioptric projection lens. This system includes an optical axis and a first deflection mirror, which is tilted in relation to the optical axis at a given tilt angle. One of the deflection mirrors has a ratio Rsp of the reflection coefficient Rs for s-polarised light to the reflection coefficient Rp for p-polarised light, in an incidence angle range that includes the tilt angle, of greater than one, whereas the corresponding ratio for the other deflection mirror is less than one. The deflection mirrors thus ensure that the polarization-dependant influence of the travel light remains minimal.

Abstract: A lithographic apparatus includes an instrument for determining the radiation intensity distribution at a pupil plane of the projection system while a patterning device is imparting the projection beam with a pattern, a calculation apparatus for calculating the effect on the imaging by the projection system of heating resulting from the projection beam in the projection system having the determined intensity distribution and a controller for adjusting the lithographic apparatus to compensate for the calculated effect of heating.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.

Abstract: A projection exposure apparatus for microlithography has a light source, an illumination system, a mask-positioning system and a projection lens. The latter has a system aperture plane and an image plane and contains at least one lens that is made of a material which has a birefringence dependent on the transmission angle. The exposure apparatus further has an optical element, which has a position-dependent polarization-rotating effect or a position-dependent birefringence. This element, which is provided close to a pupil plane of the projection exposure apparatus, compensates at least partially for the birefringent effects produced in the image plane by the at least one lens.

Abstract: The invention relates to a method of providing a joint between a plate member (1) and a frame profile (2) with a free edge (8) at the surface of the plate member. The joint is provided by applying two adhesives (9, 10). A first adhesive which, only after a curing time, obtains sufficient bearing capacity to support the plate member, is arranged on one of the surfaces to be connected by the joint, such that the adhesive (9) in the assembled condition will be placed close to said free edge. A second adhesive (10) which, immediately or shortly after, compared to the curing time of the first adhesive, obtains sufficient bearing capacity to keep the plate member in place, is arranged between said first adhesive and the free edge of the profile. The second adhesive (10) fits so tightly to plate member and profile that it prevents the first adhesive (9) from forcing its way past the free edge (8) of the profile. Further, the invention relates to a frame structure comprising such a joint.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.