Patents by Inventor Christian Wolters
Christian Wolters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9194812Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: GrantFiled: July 21, 2014Date of Patent: November 24, 2015Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Publication number: 20150330907Abstract: A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface. Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.Type: ApplicationFiled: November 30, 2014Publication date: November 19, 2015Applicant: KLA-TENCOR CORPORATIONInventors: Christian Wolters, Bret Whiteside, Anatoly Romanovsky
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Patent number: 9182358Abstract: The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.Type: GrantFiled: March 15, 2013Date of Patent: November 10, 2015Assignee: KLA-Tencor CorporationInventors: Zhiwei Xu, Christian Wolters, Juergen Reich, Bret Whiteside, Guoheng Zhao, Jijen Vazhaeparambil, Stephen Biellak, Sam Shamouilian, Mehdi Vaez-Iravani
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Patent number: 9116132Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.Type: GrantFiled: November 4, 2014Date of Patent: August 25, 2015Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Juergen Reich
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Patent number: 9068952Abstract: A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface. Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.Type: GrantFiled: September 2, 2009Date of Patent: June 30, 2015Assignee: KLA-Tencor CorporationInventors: Aleksey Petrenko, Christian Wolters, Zhongping Cai, Anatoly Romanovsky, Bret Whiteside
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Publication number: 20150055128Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.Type: ApplicationFiled: November 4, 2014Publication date: February 26, 2015Inventors: Christian Wolters, Juergen Reich
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Patent number: 8934091Abstract: Methods, systems, and structures for monitoring incident beam position in a wafer inspection system are provided. One structure includes a feature formed in a chuck configured to support a wafer during inspection by the wafer inspection system. The chuck rotates the wafer in a theta direction and simultaneously translates the wafer in a radial direction during the inspection. An axis through the center of the feature is aligned with a radius of the chuck such that a position of the axis relative to an incident beam of the wafer inspection system indicates changes in the incident beam position in the theta direction.Type: GrantFiled: March 11, 2013Date of Patent: January 13, 2015Assignee: KLA-Tencor Corp.Inventors: Juergen Reich, Aleksey Petrenko, Richard Fong, Bret Whiteside, Jien Cao, Christian Wolters, Anatoly Romanovsky, Daniel Kavaldjiev
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Patent number: 8885158Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.Type: GrantFiled: March 6, 2012Date of Patent: November 11, 2014Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Juergen Reich
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Publication number: 20140328043Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: ApplicationFiled: July 21, 2014Publication date: November 6, 2014Inventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Patent number: 8786850Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.Type: GrantFiled: October 29, 2012Date of Patent: July 22, 2014Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Aleksey Petrenko, Kurt L. Haller, Juergen Reich, Zhiwei Xu, Stephen Biellak, George Kren
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Patent number: 8755044Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.Type: GrantFiled: August 2, 2012Date of Patent: June 17, 2014Assignee: KLA-Tencor CorporationInventors: Juergen Reich, Charles Amsden, Jiayao Zhang, Christian Wolters
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Publication number: 20140139829Abstract: Methods and systems for reshaping the beam intensity distribution of an illumination light supplied to a specimen under inspection are presented. A scanning surface inspection system includes a beam shaping element that flattens the beam intensity distribution of a beam of light generated by an illumination source. The reshaped illumination light is directed to the wafer surface over an illumination spot. With a flattened beam intensity distribution, the incident beam power can be increased without the beam intensity exceeding the damage threshold of the wafer at any particular location. In addition, the illumination spot is shaped by the beam shaping element to have a variable beam width in a direction parallel to the inspection track. The location of a defect within an inspection area having a variable beam width is estimated based on an analysis of the output of the detector.Type: ApplicationFiled: September 25, 2013Publication date: May 22, 2014Inventors: Christian Wolters, Zhiwei Xu, Juergen Reich
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Patent number: 8582094Abstract: Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.Type: GrantFiled: April 20, 2005Date of Patent: November 12, 2013Assignee: KLA-Tencor Technologies Corp.Inventors: David Shortt, Stephen Biellak, Christian Wolters
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Publication number: 20130250385Abstract: A method and system for providing illumination is disclosed. The method may include providing a laser having a predetermined wavelength; performing at least one of: beam splitting or beam scanning prior to a frequency conversion; converting a frequency of each output beam of the at least one of: beam splitting or beam scanning; and providing the frequency converted output beam for illumination.Type: ApplicationFiled: March 18, 2013Publication date: September 26, 2013Applicant: KLA-TENCOR CORPORATIONInventors: Christian Wolters, Jijen Vazhaeparambil, Dirk Woll, Anatoly Romanovsky, Bret Whiteside, Stephen Biellak, Guoheng Zhao
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Publication number: 20130050689Abstract: The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.Type: ApplicationFiled: August 2, 2012Publication date: February 28, 2013Applicant: KLA-Tencor CorporationInventors: Juergen Reich, Charles Amsden, Jiayao Zhang, Christian Wolters
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Patent number: 8294887Abstract: An inspection system may include, but is not limited to: an illumination subsystem for directing light to an inspection specimen comprising: a power attenuator subsystem configured for altering the power level of a light beam emitted by the illumination subsystem; and a power attenuation control subsystem configured to provide control signals to the power attenuator subsystem according to a detected level of light scattering by the inspection specimen upon illumination by the illumination subsystem. A method for scatterometry inspection may include, but is not limited to: directing light having a power level to an inspection specimen from a light source; detecting light scattered from the specimen; and modifying a power level of one or more intermediate light beams within the light source according to a level of light scattering by the specimen upon illumination by the light source.Type: GrantFiled: July 22, 2010Date of Patent: October 23, 2012Assignee: KLA-Tencor CorporationInventors: Stephen Biellak, Daniel Kavaldjiev, George J. Kren, Anatoly Romanovsky, Christian Wolters
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Publication number: 20120229802Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.Type: ApplicationFiled: March 6, 2012Publication date: September 13, 2012Applicant: KLA-TENCOR CORPORATIONInventors: Christian Wolters, Juergen Reich
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Patent number: 8134698Abstract: In one embodiment, a surface analyzer system comprises a radiation targeting assembly to target a radiation beam onto a surface; and a scattered radiation collecting assembly that collects radiation scattered from the surface. The radiation targeting assembly generates primary and secondary beams. Data collected from the reflections of the primary and secondary beams may be used in a dynamic range extension routine, alone or in combination with a power attenuation routine.Type: GrantFiled: March 14, 2008Date of Patent: March 13, 2012Assignee: KLA-Tencor CorporationInventors: Christian Wolters, Anatoly Romanovsky, Daniel Kavaldjiev, Bret Whiteside
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Publication number: 20110051132Abstract: A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface. Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.Type: ApplicationFiled: September 2, 2009Publication date: March 3, 2011Inventors: Aleksey Petrenko, Christian Wolters, Zhongping Cai, Anatoly Romanovsky, Bret Whiteside
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Patent number: 7787114Abstract: Systems and methods for inspecting a specimen with light at varying power levels are provided. One system configured to inspect a specimen includes a light source configured to generate light. The system also includes a power attenuator subsystem configured to alter a power level of the light directed to the specimen during inspection between at least two power levels including a full power level and a minimum power level equal to or greater than about 10% of the full power level. In addition, the system includes a detection subsystem configured to generate output responsive to the light scattered from the specimen. The output can be used to detect defects on the specimen.Type: GrantFiled: June 6, 2007Date of Patent: August 31, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Christian Wolters, Jon Meyer