Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

Abstract: In a method of producing an integrated circuit (1, 91, 131) for a transponder (2, 112) a photoresist layer (11) is applied on a first surface (8) of a semiconductor device (3). A patterned mask (14, 94) is generated by lithographically patterning the photoresist layer (11), so that the photoresist layer (11) comprises at least one first via (12, 13). The patterned mask (14, 94) comprises a second surface (17) facing away from the first surface (8). The first via (12, 13) is filled with a first bump (15, 16) by depositing the first bump (12, 13) on the first surface (8). A conductive structure (18, 19, 98, 99, 132) is formed on the second surface (17) of the patterned mask (14, 94). The conductive structure (18, 19, 98, 99, 132) is electrically connected to the first bump (15, 16).

Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.

Abstract: Consistent with an example embodiment, there is a method for assembling a wafer level chip scale processed (WLCSP) wafer; The wafer has a topside surface and an back-side surface, and a plurality of device die having electrical contacts on the topside surface. The method comprises back-grinding, to a thickness, the back-side surface the wafer. A protective layer of a thickness is molded onto the backside of the wafer. The wafer is mounted onto a sawing foil; along saw lanes of the plurality of device die, the wafer is sawed, the sawing occurring with a blade of a first kerf and to a depth of the thickness of the back-ground wafer. Again, the wafer is sawed along the saw lanes of the plurality of device die, the sawing occurring with a blade of a second kerf, the second kerf narrower than the first kerf, and sawing to a depth of the thickness of the protective layer. The plurality of device die are separated into individual device die.

Abstract: Consistent with an example embodiment, there is a semiconductor device, with an active device having a front-side surface and a backside surface; the semiconductor device of an overall thickness, comprises an active device with circuitry defined on the front-side surface, the front-side surface having an area. The back-side of the active device has recesses f a partial depth of the active device thickness and a width of about the partial depth, the recesses surrounding the active device at vertical edges. There is a protective layer of a thickness on to the backside surface of the active device, the protective material having an area greater than the first area and having a stand-off distance. The vertical edges have the protective layer filling the recesses flush with the vertical edges. A stand-off distance of the protective material is a function of the semiconductor device thickness and the tangent of an angle (?) of tooling impact upon a vertical face the semiconductor device.

Abstract: Consistent with an example embodiment, there is a semiconductor device, having a topside surface and an underside surface, the semiconductor device comprises an active device of an area defined on the topside surface, the topside surface having a first area. A protective material is on to the underside surface of the semiconductor device, the protective material has an area greater than the first area. A laminating film attaches the protective material to the underside surface. The protective material serves to protect the semiconductor device from mechanical damage during handling and assembly onto a product's printed circuit board.

Abstract: In a method for manufacturing an electronic device an integrated circuit (1) is arranged between two layers (2, 3) of a substrate, said integrated circuit (1) having at least one contacting surface, a hole (4) is formed in at least one substrate layer (3) above said at least one contacting surface, a conductive structure (5) is formed on a surface of said at least one substrate layer (3) facing away from the integrated circuit (1) and said conductive structure (5) is connected to said contacting surface by means of said hole (4).

Abstract: The invention relates to a chip card (CC), in particular a SIM card, inserted for operation into a holder (HH), which holder (HH) is equipped with electrical device contacts (GK) and a press-on device (AE). The chip card (CC) comprises a substrate (S), a contact field (K), a chip (C), and a single-piece encapsulation (V). According to the invention, the encapsulation (V) has a thickness (dV) which ensures that, on insertion of the chip card (CC), the encapsulation (V) has body contact with the press-on device (AE), the contact field (K) has body contact with the device contacts (GK), and the contact field (K) is reliably electrically contacted to the device contacts (GK). No further carrier material (T) is provided.

Abstract: Consistent with an example embodiment, there is semiconductor device assembled to resist mechanical damage. The semiconductor device comprises an active circuit defined on a top surface, contact areas providing electrical connection to the active circuit. There is a pedestal structure upon which the active circuit is mounted on an opposite bottom surface; the pedestal structure has an area smaller than the area of the active device. An encapsulation, consisting of a molding compound, surrounds the sides and the underside of the active device and it surrounds the contact areas. The encapsulation provides a resilient surface protecting the active device from mechanical damage. A feature of the embodiment is that the contact areas may have solder bumps defined thereon.

Abstract: In a method of determining the distance (d) between an integrated circuit (1) and a substrate (2) emitted light enters the at least semi transparent substrate (2), passes through the substrate (2) and an at least semi transparent material (8), is reflected by the integrated circuit (1), passes again through the material (8) and the substrate (2), and leaves the substrate (2). The at least semi transparent material (8), particularly is an at least semi transparent adhesive, provided between the substrate (2) and the integrated circuit (1). The distance (d) between the substrate (2) and the integrated circuit (1) is determined by evaluating the intensities of the light leaving and entering the substrate (2), particularly by evaluating the ratio between the intensities of the light leaving and entering the substrate (2).

Abstract: Radio frequency communications are effected. In accordance with one or more embodiments, a radio frequency communication circuit includes an antenna having a conductor and a semiconductor chip having a lower substrate surface coupled with the conductor to pass data carried by radio frequency signals to a radio frequency communication circuit in an active layer on an upper surface of the substrate. Accordingly, communications are facilitated via the substrate and can alleviate the need to use through-substrate connectors and further facilitate placement of the chip on the antenna.

Abstract: Radio frequency communications are effected. In accordance with one or more embodiments, a radio frequency communication circuit includes an antenna having a conductor and a semiconductor chip having a lower substrate surface coupled with the conductor to pass data carried by radio frequency signals to a radio frequency communication circuit in an active layer on an upper surface of the substrate. Accordingly, communications are facilitated via the substrate and can alleviate the need to use through-substrate connectors and further facilitate placement of the chip on the antenna.

Abstract: In a method of producing a transponder (1) an integrated circuit (2, 72, 82) is produced. The integrated circuit (2, 72, 82) is produced by applying a photoresist layer (11) on a surface (8) of a semiconductor device (4), generating a patterned mask (14) by lithographically patterning the photoresist layer (11) so that the photoresist layer (11) comprises at least one aperture (12, 13), and filling the aperture (12, 13) with a bump (15, 16, 75, 76) by depositing the bump (15, 16, 75, 76) on the surface (8) utilizing the patterned mask (14). Finally, the integrated circuit (2, 72, 82), with the patterned mask (14), is attached to a substrate (3), which comprises an antenna structure (18). The bump (15, 16, 75, 76) is connected electrically to the antenna structure (18).

Abstract: In a method for manufacturing an electronic device an integrated circuit (1) is arranged between two layers (2, 3) of a substrate, said integrated circuit (1) having at least one contacting surface, a hole (4) is formed in at least one substrate layer (3) above said at least one contacting surface, a conductive structure (5) is formed on a surface of said at least one substrate layer (3) facing away from the integrated circuit (1) and said conductive structure (5) is connected to said contacting surface by means of said hole (4).

Abstract: Electronic device comprising an integrated circuit (1) embedded into a substrate, wherein the substrate has at least a first (3) and a second (9) conductive structure arranged on opposite sides of the integrated circuit (1) and the electrical connections (10,11,12,13) between the first (3) and the second (9) conductive structure and/or with the integrated circuit 5 (1) are established by means of holes (8) in the substrate.

Abstract: In a method of determining the distance (d) between an integrated circuit (1) and a substrate (2) emitted light enters the at least semi transparent substrate (2), passes through the substrate (2) and an at least semi transparent material (8), is reflected by the integrated circuit (1), passes again through the material (8) and the substrate (2), and leaves the substrate (2). The at least semi transparent material (8), particularly is an at least semi transparent adhesive, provided between the substrate (2) and the integrated circuit (1). The distance (d) between the substrate (2) and the integrated circuit (1) is determined by evaluating the intensities of the light leaving and entering the substrate (2), particularly by evaluating the ratio between the intensities of the light leaving and entering the substrate (2).

Abstract: In a method of determining the distance (d) between an integrated circuit (1) and a substrate (2) a picture (31,32) of the integrated circuit (1) is taken. The integrated circuit (1) is attached to the substrate (2) that is at least semi transparent. An at least semi transparent material, particularly an at least semi transparent adhesive (8), is located between the integrated circuit (1) and the substrate (2). The picture (31,32) of the integrated circuit (1) is taken through the substrate (2) and the material (8). The picture (31,32) and/or image data related to the picture (31,32) is evaluated and the distance (d) between the integrated circuit (1) and the substrate (2) is determined in response to the evaluated picture (31,32) and/or image data related to the picture (31,32).

Abstract: In a method of manufacturing an antenna (11) formed on a substrate (1) an antenna structure (2) is formed on the substrate (1). The antenna structure (2) comprises an area (3) which initially is electrically short-circuited and is designed to be turned into an antenna contact (4a,4b) to be contacted with contacts (12,13) of an integrated circuit (IC). The antenna contact (4a,4b) is formed by mechanically separating the electrically short-circuited 5 area (3) particularly utilizing cutting or stamping means (5).

Abstract: In a method of producing a transponder (1) an integrated circuit (2, 72, 82) is produced. The integrated circuit (2, 72, 82) is produced by applying a photoresist layer (11) on a surface (8) of a semiconductor device (4), generating a patterned mask (14) by lithographically patterning the photoresist layer (11) so that the photoresist layer (11) comprises at least one aperture (12, 13), and filling the aperture (12, 13) with a bump (15, 16, 75, 76) by depositing the bump (15, 16, 75, 76) on the surface (8) utilizing the patterned mask (14). Finally, the integrated circuit (2, 72, 82), with the patterned mask (14), is attached to a substrate (3), which comprises an antenna structure (18). The bump (15, 16, 75, 76) is connected electrically to the antenna structure (18).

Abstract: In a method of producing an integrated circuit (1, 91, 131) for a transponder (2, 112) a photoresist layer (11) is applied on a first surface (8) of a semiconductor device (3). A patterned mask (14, 94) is generated by lithographically patterning the photoresist layer (11), so that the photoresist layer (11) comprises at least one first via (12, 13). The patterned mask (14, 94) comprises a second surface (17) facing away from the first surface (8). The first via (12, 13) is filled with a first bump (15, 16) by depositing the first bump (12, 13) on the first surface (8). A conductive structure (18, 19, 98, 99, 132) is formed on the second surface (17) of the patterned mask (14, 94). The conductive structure (18, 19, 98, 99, 132) is electrically connected to the first bump (15, 16).