Abstract: A method, apparatus, and computer instructions for providing addresses to clients. A request is received from a client for an address. A determination is made as to whether authentication information is present in the request. A verification process is performed using the authentication information if the authentication information is presenting the request. A determination is made as to whether the authentication information is authenticated. A privileged address is provided to the client in response to the authentication information being authenticated.

Abstract: A method, system, and computer program product are disclosed for managing an application's persistent data across multiple different release versions of the application. A format for a memory area is defined wherein the persistent data will be stored according to a first release version of the application. The format is organized to permit the application running at different release versions to access the memory area. The memory area is accessed using the application that is running at a second release version. The memory area is divided into individually accessible sections. The format includes a template file for each section for each release version.

Abstract: The present invention provides a method, apparatus, and computer instructions for recovering an image of partition configuration information data for a set of partitions having at least one affinity partition in a logical partition data processing system. (Damage to an image of partition configuration data is detected. Current partition data is compared with a backup partition data. A merger of the current partition configuration data is made with the backup logical partition data if a conflict is present between the current partition configuration data and the backup partition data. The merger is performed in a manner avoiding stopping an operation on a running partition in the set of partitions.

Abstract: In bonding a first crystalline semiconductor substrate to a second crystalline semiconductor substrate, a liquid is applied to a first surface of the first substrate and to a first surface of the second substrate to wet both substrate first surfaces. The first surface of the first substrate is brought together with the first surface of the second substrate while the liquid substantially remains on both first surfaces, and then the liquid is evaporated from the substrate first surfaces, while the substrate first faces are together, at an evaporation temperature that is below the boiling point of the liquid at ambient pressure. The substrates are then heat treated at a temperature above the evaporation temperature. Surface channels can be formed in a first surface of at least one of the first and second substrates, and during the heat treatment, a crystal growth promotion vapor can be supplied to the substrates.

Abstract: A semiconductor laser oscillator structure and method is described having a tapered gain region in one-half of a laser cavity and a confocal oscillator region in another half of the cavity. An aperture is formed between two pairs of cavity spoilers located between the two cavity halves. One pair of spoilers is provided for receiving light which is reflected off of an output facet back into the semiconductor and removing it from the gain region. The other pair of spoilers removes light reflected from a curved mirror surface formed at the end of the other laser cavity half.

Abstract: A semiconductor laser gain structure having a tapered gain region comprising cavity spoilers for receiving light which is reflected off of the output facet back into the semiconductor and removing it from the gain region so as to reduce or eliminate self-oscillation. The boundaries of the gain region are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back into the gain region. The gain structure may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet is or is not, respectively, anti-reflection coated. The output facet is anti-reflection coated in either embodiment.

Abstract: A semiconductor laser gain structure having a tapered gain region comprising cavity spoilers for receiving light which is reflected off of the output facet back into the semiconductor and removing it from the gain region so as to reduce or eliminate self oscillation. The boundaries of the gain region are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back into the gain region. The gain structure may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet is or is not, respectively, anti reflection coated. The output facet is anti-reflection coated in either embodiment.

Abstract: A strained quantum-well diode laser with an AlInGaAs active layer and AlGaAs cladding and/or confining layers on a GaAs substrate is provided. AlInGaAs/AlGaAs lasers can be configured in laser geometries including ridge, waveguide, buried heterostructure, oxide-defined, proton-defined, narrow-stripe, broad-stripe, coupled-stripe and linear arrays using any epitaxial growth technique. Broad-stripe devices were fabricated in graded-index separate confinement heterostructures, grown by organometallic vapor phase epitaxy on GaAs substrates, containing a single Al.sub.y In.sub.x Ga.sub.l-x-y As quantum well with x between 0.14 and 0.12 and y between 0.05 and 0.17. With increasing Al content, emission wavelengths from 890 to 785 nm were obtained. Threshold current densities, J.sub.th 's, less than 200 A cm.sup.-2 and differential quantum efficiencies in the range 71 to 88 percent were observed.

Abstract: A gaseous mixture is introduced through a radial inlet into a plenum-like antichamber above a porous diaphragm mounted across the top of a reactor vessel of substantially uniform width. The antichamber and diaphragm are substantially coextensive with the width of the vessel. The diaphragm may form part of a removable cover/diaphragm unit received in a collar-like ring. The substrate holder includes a molybdenum cap and base which fits over a pedestal of refractory material carrying a temperature sensor with an electrical lead extending down the hollow core of a rotatable reactorThe Government has rights in this invention pursuant to Contract Number F19628-85-C-0002 awarded by the Department of the Air Force.

Abstract: An improved two-dimensional semiconductor surface-emitting laser array is described in which two intra-cavity internal reflecting surfaces are formed at a 45.degree. angle to the plane of the active layer of the semiconductor laser so as to internally reflect light from each end of the active layer in a direction normal to the plane of the active layer with a buried reflective mirror provided in the path of one of said reflections, so as to transmit reflected light back through the laser and out the top surface of the array.