Patents by Inventor Christine H. Tsau
Christine H. Tsau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9105644Abstract: A method for forming an alignment feature for back side wafer processing in a wafer fabrication process involves forming a trench into but not entirely through a wafer from a top side of the wafer; forming a contrasting material on surfaces of the trench; and grinding a bottom side of the wafer to expose the trench using the handling wafer to handle the wafer during such grinding, wherein the contrasting material lining the exposed trench provides an alignment reference for precise alignment of the wafer for back side processing the wafer.Type: GrantFiled: July 23, 2013Date of Patent: August 11, 2015Assignee: Analog Devices, Inc.Inventors: Christine H. Tsau, William David Sawyer, Thomas Kieran Nunan
-
Patent number: 9102512Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).Type: GrantFiled: October 4, 2013Date of Patent: August 11, 2015Assignee: Analog Devices, Inc.Inventors: Christine H. Tsau, Li Chen, Kuang L. Yang
-
Publication number: 20150097253Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).Type: ApplicationFiled: October 4, 2013Publication date: April 9, 2015Applicant: Analog Devices, Inc.Inventors: Christine H. Tsau, Li Chen, Kuang L. Yang
-
Patent number: 8956904Abstract: A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.Type: GrantFiled: September 20, 2012Date of Patent: February 17, 2015Assignee: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Frey, Christine H. Tsau, Michael W. Judy
-
Publication number: 20150028499Abstract: A method for forming an alignment feature for back side wafer processing in a wafer fabrication process involves forming a trench into but not entirely through a wafer from a top side of the wafer; forming a contrasting material on surfaces of the trench; and grinding a bottom side of the wafer to expose the trench using the handling wafer to handle the wafer during such grinding, wherein the contrasting material lining the exposed trench provides an alignment reference for precise alignment of the wafer for back side processing the wafer.Type: ApplicationFiled: July 23, 2013Publication date: January 29, 2015Applicant: Analog Devices, Inc.Inventors: Christine H. Tsau, William David Sawyer, Thomas Kieran Nunan
-
Publication number: 20130288070Abstract: A first metal such as germanium is prepared for metal-to-metal bonding by depositing the first metal onto a roughened foundation layer so that asperities are present on the first metal layer substantially following the topology of the asperities on the surface of the foundation layer without having to process the surface of the first metal layer. Such asperities can break through barrier layer(s) on the surface of another metal (e.g., an oxide layer, an anti-stiction coating, and/or other barrier layer) during a bonding process so that direct metal-to-metal bonding can be accomplished without having to remove the barrier layer(s) and without having to process the surface of the first metal such as by photolithography or depositing and subsequently removing a material that partially interdiffuses with the first metal.Type: ApplicationFiled: March 4, 2013Publication date: October 31, 2013Applicant: ANALOG DEVICES, INC.Inventor: Christine H. Tsau
-
Patent number: 8507306Abstract: A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.Type: GrantFiled: September 27, 2010Date of Patent: August 13, 2013Assignee: Analog Devices, Inc.Inventors: Li Chen, Christine H. Tsau, Thomas Kieran Nunan, Kuang L. Yang
-
Patent number: 8507913Abstract: A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a desired orientation and the two layers are held in contact with one another. The aluminum-germanium interface is heated to a temperature that allows the interface of the layers to melt, thus forming a bond. A portions of the germanium layer may be removed from the second wafer to allow infrared radiation to pass through the second wafer to facilitate wafer alignment.Type: GrantFiled: September 29, 2010Date of Patent: August 13, 2013Assignee: Analog Devices, Inc.Inventors: Thomas Kieran Nunan, Changhan Yun, Christine H. Tsau
-
Patent number: 8304861Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.Type: GrantFiled: June 15, 2011Date of Patent: November 6, 2012Assignee: Analog Devices, Inc.Inventors: John R. Martin, Christine H. Tsau, Timothy J. Frey
-
Patent number: 8293582Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.Type: GrantFiled: June 15, 2011Date of Patent: October 23, 2012Assignee: Analog Devices, Inc.Inventors: John R. Martin, Christine H. Tsau, Timothy J. Frey
-
Patent number: 8288191Abstract: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.Type: GrantFiled: April 8, 2011Date of Patent: October 16, 2012Assignee: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Frey, Christine H. Tsau
-
Patent number: 8183692Abstract: A structure that may be used in substrate solder bumping comprises a substrate (110), a solder resist layer (120) disposed over the substrate, a plurality of solder resist openings (121) in a surface (122) of the solder resist layer, a conformal barrier layer (130) having a first portion (131) over the surface of the solder resist layer and a second portion (132) in the solder resist openings, a mask layer (140) over the first portion of the conformal barrier layer, and a solder material (150) in the solder resist openings over the metal layer. The conformal barrier layer acts as a barrier against interaction between the solder resist layer and the mask layer during solder reflow.Type: GrantFiled: July 14, 2010Date of Patent: May 22, 2012Assignee: Intel CorporationInventors: Ravi K. Nalla, Christine H. Tsau, Mark S. Hlad
-
Publication number: 20120074417Abstract: A method of bonding wafers with an aluminum-germanium bond includes forming an aluminum layer on a first wafer, and a germanium layer on a second wafer, and implanting the germanium layer with non-germanium atoms prior to forming a eutectic bond at the aluminum-germanium interface. The wafers are aligned to a desired orientation and the two layers are held in contact with one another. The aluminum-germanium interface is heated to a temperature that allows the interface of the layers to melt, thus forming a bond. A portions of the germanium layer may be removed from the second wafer to allow infrared radiation to pass through the second wafer to facilitate wafer alignment.Type: ApplicationFiled: September 29, 2010Publication date: March 29, 2012Applicant: ANALOG DEVICES, INC.Inventors: Thomas Kieran Nunan, Changhan Yun, Christine H. Tsau
-
Publication number: 20110244630Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.Type: ApplicationFiled: June 15, 2011Publication date: October 6, 2011Applicant: ANALOG DEVICES, INC.Inventors: John R. Martin, Christine H. Tsau, Timothy J. Frey
-
Publication number: 20110241176Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.Type: ApplicationFiled: June 15, 2011Publication date: October 6, 2011Applicant: ANALOG DEVICES, INC.Inventors: John R. Martin, Christine H. Tsau, Timothy J. Frey
-
Publication number: 20110212563Abstract: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.Type: ApplicationFiled: April 8, 2011Publication date: September 1, 2011Applicant: ANALOG DEVICES, INC.Inventors: John R. Martin, Timothy J. Frey, Christine H. Tsau
-
Patent number: 7981765Abstract: A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material.Type: GrantFiled: May 4, 2009Date of Patent: July 19, 2011Assignee: Analog Devices, Inc.Inventors: John R. Martin, Christine H. Tsau, Timothy J. Frey
-
Patent number: 7943411Abstract: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.Type: GrantFiled: May 4, 2009Date of Patent: May 17, 2011Assignee: Analog Devices, Inc.Inventors: John R. Martin, Timothy J. Frey, Christine H. Tsau
-
Publication number: 20110073859Abstract: A MEMS device has a first member that is movable relative to a second member. At least one of the first member and the second member has exposed silicon carbide with a water contact angle of greater than about 70 degrees.Type: ApplicationFiled: September 27, 2010Publication date: March 31, 2011Applicant: ANALOG DEVICES, INC.Inventors: Li Chen, Christine H. Tsau, Thomas Kieran Nunan, Kuang L. Yang
-
Publication number: 20100320548Abstract: A thin silicon-rich nitride film (e.g., having a thickness in the range of around 100A to 10000A) deposited using low-pressure chemical vapor deposition (LPCVD) is used for etch stop during vapor HF etching in various MEMS wafer fabrication processes and devices. The LPCVD silicon-rich nitride film may replace, or be used in combination with, a LPCVD stoichiometric nitride layer in many existing MEMS fabrication processes and devices. The LPCVD silicon-rich nitride film is deposited at high temperatures (e.g., typically around 650-900 degrees C.). Such a LPCVD silicon-rich nitride film generally has enhanced etch selectivity to vapor HF and other harsh chemical environments compared to stoichiometric silicon nitride and therefore a thinner layer typically can be used as an embedded etch stop layer in various MEMS wafer fabrication processes and devices and particularly for vapor HF etching processes, saving time and money in the fabrication process.Type: ApplicationFiled: June 10, 2010Publication date: December 23, 2010Applicant: ANALOG DEVICES, INC.Inventors: Christine H. Tsau, Thomas Kieran Nunan