Patents by Inventor Christine Hau-Riege

Christine Hau-Riege has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer-bonding using solder and method of making the same
    Publication number: 20040056073
    Abstract: A method is provided for forming a wafer stack. This may include providing a first wafer having a first plurality of metalized trenches on a surface of the first wafer. A second wafer may be provided having a second plurality of metalized trenches on a surface of the second wafer facing the first wafer. The first plurality of metalized trenches may be solder bonded to the second plurality of metalized trenches.
    Type: Application
    Filed: September 25, 2003
    Publication date: March 25, 2004
    Inventors: Stefan Hau-Riege, Christine Hau-Riege
  • Wafer-bonding using solder and method of making the same
    Patent number: 6667225
    Abstract: A method is provided for forming a wafer stack. This may include providing a first wafer having a first plurality of metalized trenches on a surface of the first wafer. A second wafer may be provided having a second plurality of metalized trenches on a surface of the second wafer facing the first wafer. The first plurality of metalized trenches may be solder bonded to the second plurality of metalized trenches.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: December 23, 2003
    Assignee: Intel Corporation
    Inventors: Stefan Hau-Riege, Christine Hau-Riege
  • Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
    Publication number: 20030228753
    Abstract: A method of making a semiconductor device is described. That method comprises forming a copper containing layer on a substrate, and forming an alloying layer that includes an alloying element on the copper containing layer. After applying heat to cause an intermetallic layer that includes copper and the alloying element to form on the surface of the copper containing layer, a barrier layer is formed on the intermetallic layer.
    Type: Application
    Filed: June 6, 2002
    Publication date: December 11, 2003
    Inventors: Stefan Hau-Riege, Christine Hau-Riege, Wen-Yue Zheng
  • Method of making a semiconductor device that has copper damascene interconnects with enhanced electromigration reliability
    Publication number: 20030194857
    Abstract: A method of making a semiconductor device is described. That method comprises forming a conductive layer that contacts a via, wherein the conductive layer includes a sufficient amount of a dopant, which will diffuse in the direction that is opposite to the direction in which electrons will flow through the conductive layer, to reduce the electromigration of the material that comprises the bulk of the conductive layer without significantly increasing the conductive layer's resistance.
    Type: Application
    Filed: April 11, 2002
    Publication date: October 16, 2003
    Inventors: Stefan Hau-Riege, Christine Hau-Riege, Jihperng Leu, Kevin Fischer, Pei-Hua Wang, Sean Hearne
  • Wafer-bonding using solder and method of making the same
    Publication number: 20030113976
    Abstract: A method is provided for forming a wafer stack. This may include providing a first wafer having a first plurality of metalized trenches on a surface of the first wafer. A second wafer may be provided having a second plurality of metalized trenches on a surface of the second wafer facing the first wafer. The first plurality of metalized trenches may be solder bonded to the second plurality of metalized trenches.
    Type: Application
    Filed: December 17, 2001
    Publication date: June 19, 2003
    Inventors: Stefan Hau-Riege, Christine Hau-Riege