Abstract: The present invention relates to a method of cleaning a surface at least partly covered with contaminant or undesired material by applying atomic hydrogen. The invention also proposes an irradiation unit adapted to perform the cleaning method. In the present method the atomic hydrogen is generated by dissociation of molecular hydrogen directed to a surface containing catalytic material, which causes the dissociation of at least a part of the molecular hydrogen to atomic hydrogen. The surface with the catalytic material is arranged close to the surface to be cleaned and is dimensioned such that its total surface area is at least twice the surface area of the to be cleaned surface region. The method allows for the cleaning of the surface region in a constructive simple and efficient manner.

Abstract: The invention relates to an improved EUV generating device having a contamination captor for “catching” contamination and/or debris caused by corrosion or otherwise unwanted reactions of the tin bath.

Abstract: The invention relates to an improved EUV generating device having coated supply pipes for the liquid tin, in order to provide an extreme UV radiation generating device which is capable of providing a less contaminated flow of tin to and from a plasma generating part.

Abstract: The invention relates to an improved EUV reflecting element comprising a) a first layer essentially made out of a highly reflective material b) a second layer having a thickness of ?5 nm and essentially made out of a material with a sputter resistance of ?10 nm per 108 shots and whereby the second layer is provided in the path of the incident and/or reflected EUV light.

Abstract: The present invention relates to an optical device and a method of in situ treating an optical component (2, 6, 13) reflecting EUV and/or soft X-ray radiation in said optical device, said optical component (2, 6, 13) being arranged in a vacuum chamber (14) of said optical device and comprising one or several reflecting surfaces (3) having a top layer of one or several surface materials. In the method, a source (1, 5) of said one or several surface materials is provided in said chamber (14) of said optical device and surface material from said source (1, 5) is deposited on said one or several reflecting surfaces (3) during operation and/or during operation-pauses of said optical device in order to cover or substitute deposited contaminant material and/or to compensate for ablated surface material.

Abstract: The present invention relates to a high voltage electrical connection line (11), in particular for electrically connecting a gas discharge source (10) to a high voltage power source (9). The connection line is formed of a stack of two electrically conductive plates (2) separated by an electrically isolating layer (1). An electrically conductive layer (8) of a material having a higher electrical resistivity than the material of the conductive plates (2) is arranged between said isolating layer (1) and said conductive plates (2). The proposed connection line provides a higher life time when used for connecting a high voltage power source and a pulsed discharge lamp.

Abstract: The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.

Abstract: The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source (1, 31) emitting EUV-radiation and/or soft X-rays, a first volume (40) following said radiation source (1, 31) and containing first optical components (3, 33) with said optical surfaces, and a second volume (41) following said first volume (40) and containing second optical components (38). The method comprises at least one cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces, thereby forming volatile compounds with contaminations deposited on said optical surfaces, wherein said compounds are pumped out of the first volume (40) together with the first gas or gas mixture.

Abstract: The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.

Abstract: The present invention relates to a method of cleaning a surface at least partly covered with contaminant or undesired material by applying atomic hydrogen. The invention also proposes an irradiation unit adapted to perform the cleaning method. In the present method the atomic hydrogen is generated by dissociation of molecular hydrogen directed to a surface containing catalytic material, which causes the dissociation of at least a part of the molecular hydrogen to atomic hydrogen. The surface with the catalytic material is arranged close to the surface to be cleaned and is dimensioned such that its total surface area is at least twice the surface area of the to be cleaned surface region. The method allows for the cleaning of the surface region in a constructive simple and efficient manner.

Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electro

Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electro

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection element (2) comprising several layers (6, 7, 8). The layers (6, 7, 8) each comprise a mixture of at least two materials. Within each layer (6, 7, 8), the composition of the mixture varies continuously and periodically relative to the layer thickness.

Abstract: A bulk acoustic wave resonator comprising a substrate (5), a Bragg reflector (4), a top (1) and a bottom (3) electrode and a piezoelectric layer (2) with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate (6), an absorbing layer (5) disposed on the rear side of the substrate (6) and/or an absorbing layer (5) disposed on the front side of the substrate.

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection unit. The resonator unit comprises a first (3) and a second electrode (5) together with a textured piezoelectric layer (4) between the first (3) and second (5) electrodes.

Abstract: A bulk wave resonator comprising: a substrate (1); a layer (3) of piezoelectric material deposited on the substrate; a first electrode (2) and a second electrode (4) which are arranged on opposite surfaces of the layer (3) of piezoelectric material, the overlapping area of the first electrode (2) and second electrode (4) defining the resonance range of the bulk wave resonator, characterized in that the overlapping area in an intersecting plane parallel to at least one of the electrodes (2, 4) has an aspect ratio in the range from 1 (b/a) 100, where a is the length and b the width of the bulk wave resonator. The invention also relates to a bulk wave filter comprising such bulk wave resonators.

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection element (2) comprising several layers (6, 7, 8). The layers (6, 7, 8) each comprise a mixture of at least two materials. Within each layer (6, 7, 8), the composition of the mixture varies continuously and periodically relative to the layer thickness.

Abstract: The invention relates to a filter device equipped with at least one bulk acoustic wave resonator, which comprises a resonator unit and a reflection unit. The resonator unit comprises a first (3) and a second electrode (5) together with a textured piezoelectric layer (4) between the first (3) and second (5) electrodes.