Abstract: A two-stage method of producing purified graphite is described. The first stage of the method comprises the steps of subjecting graphite material to a caustic bake and releasing any remaining caustic using water. The graphite material is then subjected to a first acid wash. Neutralising and washing the acid washed graphite material is then performed to deliver an intermediate purified graphite product. In the second stage the intermediate purified graphite product is subjected to a low temperature caustic leach. Any remaining caustic in the intermediate purified graphite product is released using water, and the intermediate purified graphite product is subjected to a second acid wash. Finally, neutralising and washing the intermediate purified graphite product is performed to deliver a final purified graphite product with a purity of 99.95% C and above.

Abstract: A two-stage method of producing purified graphite is described. The first stage of the method comprises the steps of subjecting graphite material to a caustic bake and releasing any remaining caustic using water. The graphite material is then subjected to a first acid wash. Neutralising and washing the acid washed graphite material is then performed to deliver an intermediate purified graphite product. In the second stage the intermediate purified graphite product is subjected to a low temperature caustic leach. Any remaining caustic in the intermediate purified graphite product is released using water, and the intermediate purified graphite product is subjected to a second acid wash. Finally, neutralising and washing the intermediate purified graphite product is performed to deliver a final purified graphite product with a purity of 99.95% C and above.

Abstract: A two-stage method of producing purified graphite is described. The first stage of the method comprises the steps of subjecting graphite material to a caustic bake and releasing any remaining caustic using water. The graphite material is then subjected to a first acid wash. Neutralising and washing the acid washed graphite material is then performed to deliver an intermediate purified graphite product. In the second stage the intermediate purified graphite product is subjected to a low temperature caustic leach. Any remaining caustic in the intermediate purified graphite product is released using water, and the intermediate purified graphite product is subjected to a second acid wash. Finally, neutralising and washing the intermediate purified graphite product is performed to deliver a final purified graphite product with a purity of 99.95% C and above.

Abstract: A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Abstract: A process for treating a semiconductor wafer with a gaseous medium containing hydrogen fluoride and at least one oxidizing agent which oxidizes the surface of the semiconductor wafer, involves flowing the gaseous medium onto the surface of the semiconductor wafer at a relative velocity in the range from 40 mm/s to 300 m/s. Semiconductor wafers and an SOI wafers prepared by the process have a low roughness and metal concentration in the absence of a subsequent polishing step.

Abstract: A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Abstract: A silica glass crucible is produced by a) providing a porous amorphous silica glass green body, which is infiltrated with at least one substance that promotes crystallization of a silica glass crucible, b) drying the infiltrated silica glass green body, c) filling the green body with a metal or semimetal, and d) heating the filled green body for a period of from 1 h to 1000 h to a temperature of from 900 to 2000° C. to form at least a portion of silica crystalline phase. The process may be continued by further heating to melt the metal or semimetal and pulling a single crystal from the melt.

Abstract: A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm?3 and greater than 1*1012 atcm?3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Abstract: A silica glass crucible is produced by

Abstract: A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH3. The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.

Abstract: A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016 atcm−3 and greater than 1*1012 atcm−3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

Abstract: 1:2 Nickel or 1:2 copper complexes of a naphthostyril of the formula ##STR1## or of tautomers thereof, in which A, X and Y are as defined in claim 1, are suitable for pigmenting high molecular weight organic material.

Abstract: An electrophotographic imaging process, wherein the electrically photosensitive particles for the image reproduction consist of a black pigment selected from the series of the anthraquinoid pigments which contain at least 2 anthraquinone radicals or at least 6 condensed rings, of the perylenetetracarboxylic diimides or of the metal complexes of the formula ##STR1## wherein A represents a nitrogen atom or the ##STR2## X represents a hydrogen or halogen atom or an alkyl group of 1 to 6 carbon atoms,Y represents a hydrogen or halogen atom, an alkyl, alkoxy or alkylsulphonyl group of 1 to 6 carbon atoms, a nitro or carbamoyl group, an alkylcarbamoyl or alkoxycarbonyl group of 2 to 6 carbon atoms or an arylcarbamoyl or aryloxycarbonyl group of 7 to 11 carbon atoms.

Abstract: Bis-isoindoline pigments of the formula ##STR1## wherein A represents a carbocyclic or heterocyclic aromatic radical,Q represents an oxygen atom or an imino group,E represents a cyano or acetyl group, a group of the formula --COOR, wherein R represents a C.sub.1 -C.sub.4 -alkyl group or a phenyl group which is unsubstituted or substituted in the o-, p- or m-position by halogen atoms, C.sub.1 -C.sub.4 -alkyl or C.sub.1 -C.sub.4 -alkoxy groups, or represents a group of the formula --CONHR.sub.1, wherein R.sub.1 represents a hydrogen atom, a C.sub.1 -C.sub.4 -alkyl group or a phenyl group which is unsubstituted or substituted in the o-, p- or m-position by halogen atoms or C.sub.1 -C.sub.4 -alkyl or C.sub.1 -C.sub.4 -alkoxy groups,X represents a hydrogen atom,Y represents a chlorine or bromine atom,M and n are integers from 0 to 4,P is an integer from 0 to 1, while the sum of m+n+p must be 4, andZ if p is 1 and m is 3, represents a nitro or C.sub.2 -C.sub.

Abstract: Mixed complexes of methine dyes of formula ##STR1## wherein M.sub.1 represents zinc, cadmium, lead or manganese, M.sub.2 represents cobalt, copper or nickel, R represents an organic radical, Z.sub.1 represents an oxygen or a sulphur atom or an imino group, X.sub.1 and Y.sub.1 represent hydrogen or halogen atoms, alkyl, alkoxy, alkoxycarbonyl, alkylsulphonyl or alkylcarbamoyl groups of 1 to 6 carbon atoms, nitro, carbamoyl or arylcarbamoyl groups, or the radicals X.sub.1 and Y.sub.1 form a fused benzene ring, X represents a hydrogen atom, Y represents a halogen atom and Z represents a nitro group or a group of formula R.sub.1 Y.sub.2 --, wherein R.sub.1 represents a hydrogen atom, an alkyl or cycloalkyl group of 1 to 6 carbon atoms, an aralkyl or aryl group, and Y.sub.2 represents an oxygen or a sulphur atom, m is 0 to 4, n is 0 to 4, p is 0 to 3, and the sum of m+n+p must be 4, and wherein the atomic ratio of M.sub.1 :M.sub.

Abstract: Iminoisoindolinone metal complexes of formula ##STR1## wherein A represents a 5- or 6-membered heterocyclic radical which contains at least one further heteroatom and can be fused or doubled with benzene nuclei, M represents a divalent metal atom excluding the alkaline earth metals, X represents a hydrogen atom, Y represents a halogen atom, Z represents a nitro group, an alkoxycarbonyl group of 2 to 6 carbon atoms or a group of formula RY.sub.2 --, wherein R represents a hydrogen atom, an alkyl group of 1 to 6 carbon atoms which is substituted by an aryl radical or is unsubstituted, a cycloalkyl group of 5 to 6 carbon atoms, or represents an aryl group, and Y.sub.2 represents an oxygen or a sulphur atom, m and n are 0 to 4, p is 0 to 2, and the sum of m+n+p must be 4, which are useful for pigmenting high molecular organic material.

Abstract: Isoindolinone pigments of the formula ##STR1## wherein M denotes a polyvalent metal atom other than an alkaline earth, R denotes an organic radical, X denotes an O or S atom or an imino group, X.sub.1 and Y.sub.1 denote H or halogen atoms, alkyl, alkoxy, alkoxycarbonyl, alkylsulphonyl or alkylcarbamoyl groups containing 1-6 C atoms, or nitro, carbamoyl or aralcarbamoyl groups, or the radicals X.sub.1 and Y.sub.1 form a fused benzene ring, X.sub.2 denotes an H atom, Y denotes a halogen atom and Z denotes a nitro, a carbamoyl or phenylcarbamoyl group, an alkylcarbamoyl group having 2-6 C atoms, or a group of the formula R.sub.1 Y.sub.2, wherein R.sub.1 represents an H atom, an alkyl or cycloalkyl group containing 1-6 C atoms or an aralkyl or aryl group and Y.sub.2 represents an O or S atom, m denotes 0-4, n denotes 0-4 and p denotes 0-3 and the sum of m+n+p must be 4, are useful for coloring plastics and lacquers in yellow to orange shades of excellent fastness properties.

Abstract: Metal complex pigments of the formula ##SPC1##Wherein X and Y denote hydrogen or halogen atoms or alkyl or alkoxy groups containing 1-4 C atoms and V and Z denote hydrogen or halogen atoms, nitro groups or alkyl, alkoxy or alkylsulphonyl groups containing 1-6 atoms, the two radicals V and Z can furthermore form a fused benzene ring and M represents a polyvalent metal atom, except an alkaline earth metal atom which are useful for pigmenting high molecular organic material.