Abstract: In a method for determining the phase and/or refractive index of a region of an object, the object region is illuminated with coherent or partly coherent light and is imaged into the image plane a number of times with different imaging properties and is recorded in order to obtain a plurality of intensity recordings of the object region. The phase and/or refractive index determination is carried out based upon the plurality of intensity recordings. The different imaging properties differ at least in terms of different phase shifts which are additionally introduced into the imaging beam path, and which are generated differently than by changing the focusing when carrying out the recordings. The different phase shifts which are additionally introduced into the imaging beam path are effected by introducing at least one optical element into the objective and/or manipulating at least one optical element of the objective.

Abstract: When detecting an object structure, at least one portion of the object is initially illuminated with illumination light of an at least partly coherent light source from at least one preferred illumination direction. At least one diffraction image of the illuminated portion is recorded by spatially resolved detection of the diffraction intensity of the illumination light, diffracted by the illuminated portion, in a detection plane. At least one portion of the object structure is reconstructed from the at least one recorded diffraction image using an iterative method. Here, the iteration diffraction image of a raw object structure is calculated starting from an iteration start value and said raw object structure is compared to the recorded diffraction image in each iteration step.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection.

Abstract: Various approaches in which an image-recording parameter is varied between a plurality of images of an object and a stereo image pair is displayed on the basis of the images recorded thus are described. Here, in particular, the image-recording parameter can be a focal plane or an illumination direction.

Abstract: A method for determining the optimal position of the focal plane for examining a specimen by microscopy can include a) illuminating the specimen with light and recording images at different positions of the focal plane to provide a stack of intensity images, b) calculating a phase image from at least two intensity images, with the calculated phase image being assigned a focal plane position located within a focal plane region whose boundaries are the two most spaced apart positions of the focal plane of the at least two intensity images, c) repeating step b) multiple times with different intensity images such that a stack of phase images is available, d) calculating at least one focus measure value for each phase image, and e) determining the optimal position of the focal plane on the basis of the calculated focus measure values and the focal plane positions assigned to the phase images.

Abstract: The invention relates to an apparatus for manipulating a focus of excitation light on or in a sample, particularly in a microscope, comprising a light source for emitting excitation light, an excitation beam path for guiding the excitation light onto or into the sample, the excitation beam path comprising an objective for guiding the excitation light onto or into the sample and a wavefront modulator for modulating the excitation light, and a control device for driving the wavefront modulator.

Abstract: In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected.

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: The present invention relates to a method for evaluating a statistically distributed measured value in the examination of an element for a photolithography process, comprising the following steps: (a) using a plurality of parameters in a trained machine learning model, wherein the parameters characterize a state of a measurement environment in a time period assigned to a measurement of the measured value; and (b) executing the trained machine learning model in order to evaluate the measured value.

Abstract: When detecting an object structure, at least one portion of the object is initially illuminated with illumination light of an at least partly coherent light source from at least one preferred illumination direction. At least one diffraction image of the illuminated portion is recorded by spatially resolved detection of the diffraction intensity of the illumination light, diffracted by the illuminated portion, in a detection plane. At least one portion of the object structure is reconstructed from the at least one recorded diffraction image using an iterative method. Here, the iteration diffraction image of a raw object structure is calculated starting from an iteration start value and said raw object structure is compared to the recorded diffraction image in each iteration step.

Abstract: The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.

Abstract: Various approaches in which an image-recording parameter is varied between a plurality of images of an object and a stereo image pair is displayed on the basis of the images recorded thus are described. Here, in particular, the image-recording parameter can be a focal plane or an illumination direction.

Abstract: The invention relates to a method and an appliance for predicting the imaging result obtained with a mask when a lithography process is carried out, wherein the mask comprises mask structures to be imaged and the mask is destined to be illuminated in a lithography process in a projection exposure apparatus with a predetermined illumination setting for exposing a wafer comprising a photoresist.

Abstract: To determine a position of an object (100) parallel to the optical axis (120) of an optical device (1), the object (100) is illumined from a first illumination direction (210-1) and from a second illumination direction (210-2) and an image (230-1, 230-2) is acquired in each case. The position of the object (100) is determined based on a distance (250) between imaging locations of the object (220-1, 220-2) in the images (230-1, 230-2).

Abstract: In a method for three-dimensionally measuring a 3D aerial image in the region around an image plane during the imaging of a lithography mask, which is arranged in an object plane, a selectable imaging scale ratio in mutually perpendicular directions (x, y) is taken into account. For this purpose, an electromagnetic wavefront of imaging light is reconstructed after interaction thereof with the lithography mask. An influencing variable that corresponds to the imaging scale ratio is included. Finally, the 3D aerial image measured with the inclusion of the influencing variable is output. This results in a measuring method with which lithography masks that are optimized for being used with an anamorphic projection optical unit during projection exposure can also be measured.

Abstract: The invention relates to a reflection-reduced contrast imaging method and to a device for generating a reflection-reduced contrast image, preferably from microscopic images, in particular in order to read height progression information of a condition of an object.

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Abstract: A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.