Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: The present invention relates to a process for preparing a tubular article, comprising (a) providing a carrier tube, (b) providing a metal coating on the carrier tube by applying a liquid metal phase onto the carrier tube and solidifying the liquid metal phase, (c) applying a contact pressure to the metal coating by at least one densification tool, and moving the densification tool and the metal coating relative to each other.

Abstract: Known cylindrical sputtering targets comprise a substrate and a target material that forms a layer on the substrate, said layer has a thickness d, wherein the target material comprises TiOx as the main component, and x is within a range of 1<x<2. Starting therefrom and in order to provide large-sized cylindrical sputtering targets with a thick target layer comprising sub-stoichiometric TiO2 it is proposed that x is within a range of 1.45<x<1.7 that allows a target layer thickness d which is larger than 10 mm.

Abstract: A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO2, Ta2O5, Y2O3, HfO, CaO, MgO, Ce2O3, Al2O3, TiO2 and Nb2O5.

Abstract: The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide has an oxygen deficiency, compared to the oxygen content of its fully oxidized form, of at least 0.40 wt %, has a total amount of metal elements other than zirconium of less than 3.0 wt %, based on the total amounts of metal elements including zirconium, and has an X-ray powder diffraction pattern having a peak P1 at 28.2°+/?0.2° 2-theta, a peak P2 at 31.4°+/?0.2° 2-theta, and a peak P3 at 30.2°+/?0.2° 2-theta.

Abstract: The present invention relates to a sputtering target, comprising a silver alloy comprising a first element, selected from indium, tin, antimony and bismuth, in an amount of 0.01 to 2 wt. %, based on the total weight of the silver alloy, and 0.01 to 2 wt. % titanium, based on the total weight of the silver alloy, and having an average grain size of no more than 55 ?m.

Abstract: The present invention relates to a sputtering target, which comprises a zirconium oxide as a sputtering material, wherein the zirconium oxide has an oxygen deficiency, compared to the oxygen content of its fully oxidized form, of at least 0.40 wt %, has a total amount of metal elements other than zirconium of less than 3.0 wt %, based on the total amounts of metal elements including zirconium, and has an X-ray powder diffraction pattern having a peak P1 at 28.2°+/?0.2° 2-theta, a peak P2 at 31.4°+/?0.2° 2-theta, and a peak P3 at 30.2°+/?0.2° 2-theta.

Abstract: The present invention relates to a process for preparing a tubular article, comprising (a) providing a carrier tube, (b) providing a metal coating on the carrier tube by applying a liquid metal phase onto the carrier tube and solidifying the liquid metal phase, (c) applying a contact pressure to the metal coating by at least one densification tool, and moving the densification tool and the metal coating relative to each other.

Abstract: The invention claims a three dimensional sputter target comprising CuZnSn material, CuZn material or CuSn material. Exemplary has a CuZnSn material a Cu content ranging from 40 atomic percent to 60 atomic percent; a Zn content ranging from 20 atomic percent to 30 atomic percent; and a Sn content ranging from 20 atomic percent to 30 atomic percent, wherein the three dimensional sputter target has at least one principal axis dimension greater than 500 mm and the CuZnSn material has a grain size ranging from 0.005 mm to 5 mm. Additional to that claims the invention a method of producing the three dimensional sputter target.

Abstract: A sputtering target for the production of layers such as optical layers, the layers produced by the target, and a method for producing the target are described. In addition to Si or a combination of Si and Al, the sputtering target contains metal oxide(s), a combination of at least two metal oxides, or a combination containing at least one metal oxide in the form of an alloy or in the form of a mixture. The sputtering target has a metal oxide fraction generated by the Si and Al and the metal oxide(s) or the combination thereof. Preferably, the metal oxide in the sputtering target is a metal oxide selected from ZrO2, Ta2O5, Y2O3, HfO, CaO, MgO, Ce2O3, Al2O3, TiO2 and Nb2O5.

Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: A tube-shaped sputtering target is provided having a carrier tube and an indium-based sputtering material arranged on the carrier tube. The sputtering material has a microstructure having a mean grain size of less than 1 mm, measured as the mean diameter of the grains on the sputtering-roughened surface of the sputtering material.

Abstract: An adhesive is provided, in particular for the adhesion of conductive materials, having at least one binder component and fillers, wherein the fillers contain fibers or a fiber-powder mixture and the fibers and/or powder contain an electrically conductive material. Further, an assembly is provided made of a sputtering target material and a carrier material with an adhesive.

Abstract: A tubular target is provided having a cylindrical carrier tube, at least one target tube arranged on its exterior surface, and a connecting layer arranged between the target tube and the carrier tube. The connecting layer is electrically conductive and has a wetting degree of >90%.

Abstract: A sputter target is provided having a sputter material based on TiO2 and made such that the sputter material contains 15-60 mol. % Nb2O5. A method for the production of the sputter target includes the following steps: mixing of TiO2 and Nb2O5 powder in a liquid slurry; spray granulating this slurry to form TiO2:Nb2O5 mixed oxide granulate; and plasma spraying this granulate onto a sputter target base body.

Abstract: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 ?-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Abstract: A sputter target is provided having a sputter material made of a silver alloy comprising silver and at least one further element selected from the group of Mg, Ca, Co, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, and Lu. The at least one further element is present in the alloy in a proportion of >50 at. ppm, respectively, and a total proportion of the group of <5 at. %. The sputter targets may be used to produce a glass substrate having a thermal insulation layer.

Abstract: A tubular sputtering target with a target body and with an attachment device arranged at at least one end of the target body. The attachment device and/or an end cover are joined with the target body by material joining or positive locking.

Abstract: A sputter target produced from an alloy powder, the individual particles of which are composed of an Si—Al alloy. It is found that a high degree of homogeneity of the sputter target can be achieved in this way.

Abstract: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 &OHgr;-cm, which contains as an additive at least one doping agent or a mixture of doping assents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminun oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.