Abstract: A sputter target is provided having a sputter material based on TiO2 and made such that the sputter material contains 15-60 mol. % Nb2O5. A method for the production of the sputter target includes the following steps: mixing of TiO2 and Nb2O5 powder in a liquid slurry; spray granulating this slurry to form TiO2:Nb2O5 mixed oxide granulate; and plasma spraying this granulate onto a sputter target base body.

Abstract: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 ?-cm, which contains as an additive at least one doping agent or a mixture of doping agents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminum oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Abstract: A sputter target is provided having a sputter material made of a silver alloy comprising silver and at least one further element selected from the group of Mg, Ca, Co, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, and Lu. The at least one further element is present in the alloy in a proportion of >50 at. ppm, respectively, and a total proportion of the group of <5 at. %. The sputter targets may be used to produce a glass substrate having a thermal insulation layer.

Abstract: A tubular sputtering target with a target body and with an attachment device arranged at at least one end of the target body. The attachment device and/or an end cover are joined with the target body by material joining or positive locking.

Abstract: A sputter target produced from an alloy powder, the individual particles of which are composed of an Si—Al alloy. It is found that a high degree of homogeneity of the sputter target can be achieved in this way.

Abstract: An electrically conductive titanium dioxide sputter target with an electrical resistivity of less than 5 &OHgr;-cm, which contains as an additive at least one doping agent or a mixture of doping assents in an amount of less than 5 mole %. The doping agent or agents are selected from the group including indium oxide, zinc oxide, bismuth oxide, aluminun oxide, gallium oxide, antimony oxide, and zirconium oxide. This treatment renders the titanium dioxide sputter target suitable for use in a direct-current sputtering process without any negative effects on the properties of the coating.

Abstract: A fine wire made of an alloy of gold which contains 0.6 to 2 weight % of nickel, or an alloy of gold which contains 0.1 to 2 weight % of nickel, 0.0001 to 0.1 weight % of alkaline earth metal and/or rare earth metal, and optionally 0.1 to 1.0 weight % of platinum and/or palladium . The fine wire is distinguished by a favorable electrical conductivity and a good ratio of strength to elongation. The fine wire is suitable both for wire bonding of semiconductor devices and for producing the ball bumps of flip-chips.

Abstract: Fine wires of a gold alloy of 0.05 to 0.95 wt % platinum, palladium or a mixture thereof; 0.001 to 0.1 wt % mischmetal containing at least 50 wt. % of cerium; and 0 to 0.1 wt % of alkaline earth metal. The wire has a favorable strength-to-elongation ratio and is suitable both for wire bonding and for making the ball bumps of flip chips.