Abstract: A method for evaluating particle concentrations in the atmosphere of a clean room or of a machine mini-environment is described. The method includes exposing a test surface of a test substrate to the atmosphere for a test time, capturing an amount of particles at the test surface of the substrate at the end of the test time, analyzing the amount of captured particles, and comparing the analyzed amount of particles with a reference amount of particles from a reference substrate. An evaluation of the atmosphere of the room or environment can thus be accomplished in a relatively short time.

Abstract: A method and a device for producing an adhesive surface on a substrate which can be bonded to another substrate. In an implementation, the technique includes treating the surface of the substrate by wet chemical etching to remove an oxide layer and to provide a hydrophobic surface, and exposing the etched hydrophobic surface to a gaseous ozone atmosphere to provide a dry hydrophilic surface. A device for producing an adhesive surface on a substrate according to an implementation includes a bath with an etchant for removing an oxide layer from the surface of the substrate and to produce a hydrophobic surface, and a container having an inner volume that surrounds the bath. The inner volume also includes a gaseous ozone atmosphere to produce a dry hydrophilic surface.

Abstract: In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

Abstract: This invention relates to a process for transfer of at least one thin film of solid material delimited in an initial substrate (20).

Abstract: In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

Abstract: A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature to a final annealing temperature while evolving according to a first phase up to a transition temperature, then according to a second phase during which the rise in temperature per unit of time is greater than that of the first phase. The invention also concerns an application for using this process in a particular semiconductor fabrication technique.

Abstract: In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

Abstract: The invention relates to improvements in a process and annealing device for cleaving a wafer layer along a weakened zone in a donor wafer using a thermal anneal. In one improvement, at least one donor wafer is provided in a substantially horizontal position during the thermal anneal to prepare a wafer layer which, after detachment, has a cleaved surface with reduced surface roughness irregularities. The donor wafer can be preferably placed inside a chamber between two heating electrodes during the thermal anneal. The thermal anneal can be conducted to detach the wafer layer or the donor wafer to mechanical action to detach the wafer layer after the thermal anneal is conducted. Either way, a cleaved surface is provided on the detached wafer layer that does not include isolated dense areas adjacent the wafer layer periphery.

Abstract: Process for providing separable structures comprising providing at least two structures wherein at least one structure contains a diffusable element contacting said structures under conditions providing molecular bonding of said structures along a bonding interface and heating said bonded structures under conditions causing diffusion of the diffusable element to the bonding interface where said diffusable element interacts with the bonding interface enabling the unbounding of said structures along the bonding interface. This process is useful in the manufacture of devices with integrated circuits.

Abstract: The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).

Abstract: Treatment process for bonding two structures (200, 220) by molecular adhesion on a bonding interface (224), and unbonding of the two structures along the said bonding interface.