Abstract: An electronic component array includes a backplane substrate, and a plurality of integrated circuit elements on the backplane substrate. Each of the integrated circuit elements includes a chiplet substrate having a connection pad and a conductor element on a surface thereof. The connection pad and the conductor element are electrically separated by an insulating layer that exposes at least a portion of the connection pad. At least one of the integrated circuit elements is misaligned on the backplane substrate relative to a desired position thereon. A plurality of conductive wires are provided on the backplane substrate including the integrated circuit elements thereon, and the connection pad of each of the integrated circuit elements is electrically connected to a respective one of the conductive wires notwithstanding the misalignment of the at least one of the integrated circuit elements. Related fabrication methods are also discussed.

Abstract: A structure with an interconnection layer for redistribution of electrical connections includes a plurality of first electrical connections disposed on a substrate in a first arrangement. An insulating layer is disposed on the substrate over the first electrical connections. A plurality of second electrical connections is disposed on the insulating layer on a side of the insulating layer opposite the plurality of first electrical connections in a second arrangement. Each second electrical connection is electrically connected to a respective first electrical connection. An integrated circuit is disposed on the substrate and is electrically connected to the first electrical connections. The first electrical connections in the first arrangement have a greater spatial density than the second electrical connections in the second arrangement.

Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer.

Abstract: According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the method includes applying a semiconductor layer sequence on a substrate, structuring the semiconductor layer sequence by forming trenches thereby separating the semiconductor layer sequence into a plurality of semiconductor bodies and applying an insulating layer covering the trenches and vertical surfaces of the plurality of semiconductor bodies. The method further includes forming a plurality of tethers by structuring the insulating layer in regions covering the trenches, locally detaching the substrate from the plurality of semiconductor bodies, wherein the tethers remain attached to the substrate and selectively picking up each semiconductor body by separating the tethers from the substrate, wherein each semiconductor body comprises a portion of the semiconductor layer sequence.

Abstract: A single metal layer device, such as a display or sensor, comprises a substrate and a patterned metal layer. The patterned metal layer forms a two-dimensional array of spatially separated column line segments that each extend only partially across the display substrate in a column direction and forms a one-dimensional array of row lines extending across the display substrate in a row direction different from the column direction. The row lines and column line segments are electrically separate in the patterned metal layer. Spatially separated electrical jumpers are disposed on the display substrate and electrically connect pairs of column line segments adjacent in the column direction. Each electrical jumper has an independent jumper substrate independent of and separate from the display substrate. In certain embodiments, spatially separated light-emitting pixel circuits are disposed on a display substrate and are electrically connected to at least one row line and one column line.

Abstract: A printable component includes a component substrate and one or more electrical conductors. One or more electrically conductive connection posts protrudes from the component substrate to form an exposed electrical contact. Each connection post is electrically connected to at least one of the electrical conductors and one or more wicking posts protrude from the component substrate. The wicking post can be insulating. In certain embodiments, a printable component source wafer comprises a source wafer, a plurality of sacrificial portions separated by anchor portions formed in a sacrificial layer of the source wafer, and a plurality of printable components. Each printable component is disposed over a corresponding sacrificial portion and connected to an anchor portion by a tether. A destination substrate structure comprises a destination substrate having one or more electrically conductive contact pads, an adhesive layer disposed on the destination substrate, and one or more printable components.

Abstract: According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.

Abstract: A device comprises a destination substrate; a multilayer structure on the destination substrate, wherein the multilayer structure comprises a plurality of printed capacitors stacked on top of each other with an offset between each capacitor along at least one edge of the capacitors; and wherein each printed capacitor includes a plurality of electrically connected capacitors. Each printed capacitor of the plurality of printed capacitors can be a horizontal or a vertical capacitor. Each printed capacitor can include a plurality of capacitor layers, each capacitor layer including a plurality of electrically connected capacitors.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: An LED component comprises a plurality of fused light-emitting diodes (LEDs) (e.g., micro-transfer printable or micro-transfer printed LEDs). Each fused LED comprises an LED with first and second LED electrical connections for providing power to the LED and a fuse with first and second fuse electrical connections. The first LED electrical connection is electrically connected to the first electrode. The first fuse electrical connection is electrically connected to the second LED electrical connection and the second fuse electrical connection is electrically connected to the second electrode. A fused LED source wafer comprises an LED wafer having a patterned sacrificial layer forming an array of sacrificial portions separated by anchors and a plurality of fused LED components, each fused LED component disposed entirely on or over a corresponding sacrificial portion. A light-emission system comprises a system substrate and a plurality of fused LED components disposed on or over the system substrate.

Abstract: In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

Abstract: An apparatus comprising at least one light source, at least one photodetector, a first layer of optical material configured to embed the at least one light source, and a second layer of optical material configured to embed the at least one photodetector. The first and second layer of optical material are configured to guide light from the at least one light source and to prevent the light from the at least one light source directly reaching the at least on photodetector, and the second layer of optical material is configured to guide light towards the at least one photodetector.

Abstract: A light-emitting diode (LED) structure includes an LED substrate having a first side and a second side opposing the first side. One or more light-emitting diodes are disposed on the first side and arranged to emit light through the LED substrate. In certain embodiments, a wire-grid polarizer is disposed on the second side and arranged to polarize light emitted from the one or more light-emitting diodes. A plurality of different colored LEDs or an LED with one or more color-conversion materials can be provided on the LED substrate to provide white light. A spatially distributed plurality of the LED structures can be provided in a backlight for a liquid crystal display. A polarization-preserving transmissive diffuser can diffuse light emitted from the LED toward the liquid crystal layer and a polarization-preserving reflective diffuser can diffuse light emitted from the LED away from the liquid crystal layer.

Abstract: The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.

Abstract: A compound light-emitting diode (LED) device includes a semiconductor substrate having an active electronic circuit formed in or on the semiconductor substrate. Two or more electrically conductive circuit connection pads are formed in or on the semiconductor substrate and are electrically connected to the active electronic circuit. One or more micro-transfer printed LEDs each have at least two LED electrodes or connection pads and a fractured LED tether. An adhesive layer is disposed between the semiconductor substrate and each LED to adhere the semiconductor substrate to the LED. Two or more electrical conductors electrically connect one of the electrodes or LED connection pads to one of the circuit connection pads.

Abstract: A hybrid high-security document includes a document and one or more independent light-emitting modules disposed on or embedded in the document. Each module comprises an antenna with multiple turns, an electronic circuit, and a light emitter mounted and electrically connected on a substrate separate from the document. The electronic circuit is responsive to electrical power provided from the antenna to control the light emitter to emit light. The electronic circuit can include a memory storing information relevant to the hybrid high-security document or its use. The information can be accessed by external readers providing electromagnetic energy to the hybrid high-security document. The hybrid high-security document can be a hybrid banknote.

Abstract: Embodiments of the present invention provide a compound power transistor device including a first semiconductor substrate including a first semiconductor material, a second semiconductor substrate including a second semiconductor material different from the first semiconductor material, and a power transistor formed in or on the second semiconductor substrate. In certain embodiments, the second semiconductor substrate is micro-transfer printed on and secured to the first semiconductor substrate.

Abstract: A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.

Abstract: An inorganic-light-emitter display includes a display substrate and a plurality of spatially separated inorganic light emitters distributed on the display substrate in a light-emitter layer. A light-absorbing layer located on the display substrate in the light-emitter layer is in contact with the inorganic light emitters. Among other things, the disclosed technology provides improved angular image quality by avoiding parallax between the light emitters and the light-absorbing material, increased light-output efficiency by removing the light-absorbing material from the optical path, improved contrast by increasing the light-absorbing area of the display substrate, and a reduced manufacturing cost in a mechanically and environmentally robust structure using micro transfer printing.