Abstract: A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability.

Abstract: An embedded attenuated phase shift mask (“EAPSM”) includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact in the mask structure.

Abstract: A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing fluorocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead.

Abstract: A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.