Patents by Inventor Christopher Dennis

Christopher Dennis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Frequency doubling using a photo-resist template mask
    Patent number: 8357618
    Abstract: A method for doubling the frequency of a lithographic process using a photo-resist template mask is described. A device layer having a photo-resist layer formed thereon is first provided. The photo-resist layer is patterned to form a photo-resist template mask. A spacer-forming material layer is deposited over the photo-resist template mask. The spacer-forming material layer is etched to form a spacer mask and to expose the photo-resist template mask. The photo-resist template mask is then removed and an image of the spacer mask is finally transferred to the device layer.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: January 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Dennis Bencher, Huixiong Dai, Li Yan Miao, Hao Chen
  • Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants
    Patent number: 8338316
    Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: December 25, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
  • OFF-HEAP DIRECT-MEMORY DATA STORES, METHODS OF CREATING AND/OR MANAGING OFF-HEAP DIRECT-MEMORY DATA STORES, AND/OR SYSTEMS INCLUDING OFF-HEAP DIRECT-MEMORY DATA STORE
    Publication number: 20120222005
    Abstract: Certain example embodiments relate to a highly-concurrent, predictable, fast, self-managed, in-process space for storing data that is hidden away from the garbage collector and its related pauses. More particularly, certain example embodiments relate to improved memory management techniques for computer systems that leverage an off-heap direct-memory data store that is massively scalable and highly efficient. The off-heap store may be provided in connection with a Java-based environment, and garbage collection may be completely or nearly completely avoided for the off-heap store. The off-heap store may be integrated into a tiered storage solution in certain example embodiments.
    Type: Application
    Filed: January 20, 2012
    Publication date: August 30, 2012
    Applicant: TERRACOTTA INC.
    Inventors: Steven T. Harris, Christopher Dennis, Saravanan Subbiah
  • Semiconductor device having silicon carbide and conductive pathway interface
    Patent number: 8183150
    Abstract: The present invention provides semiconductor device formed by an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.
    Type: Grant
    Filed: October 24, 2008
    Date of Patent: May 22, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Judy H. Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S. Ngai, Bok Hoen Kim
  • LIGHT EMITTING DIODE ASSEMBLY AND THERMAL CONTROL BLANKET AND METHODS RELATING THERETO
    Publication number: 20120049220
    Abstract: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.
    Type: Application
    Filed: June 1, 2011
    Publication date: March 1, 2012
    Applicant: E.I. DU PONT DE NEMOURS AND COMPANY
    Inventor: CHRISTOPHER DENNIS SIMONE
  • Self-aligned multi-patterning for advanced critical dimension contacts
    Patent number: 8084310
    Abstract: Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: December 27, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Bencherki Mebarki, Li Yan Miao, Christopher Dennis Bencher, Jen Shu
  • Rubber compositions
    Patent number: 8076404
    Abstract: The present invention relates to rubber compositions containing a filler and comprising (i) at least one rubber containing olefinic unsaturation and (ii) functionalized nano transition metal oxide and/or sulfide particles. The invention further relates to a method of manufacture of the rubber compositions and to the use of the compositions in tires, belts and/or hoses.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: December 13, 2011
    Assignee: Rubber Nano Products (Proprietary) Limited
    Inventors: Christopher Dennis Woolard, Katherine Garde, Robert Michael Bosch
  • LOW TEMPERATURE PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT NON-PEELING OPTICAL ABSORBER FOR A SCANNING LASER SURFACE ANNEAL OF IMPLANTED DOPANTS
    Publication number: 20110223773
    Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
    Type: Application
    Filed: May 19, 2011
    Publication date: September 15, 2011
    Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
  • Dopant activation in doped semiconductor substrates
    Patent number: 7989366
    Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: August 2, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey C. Munro, Srinivas D. Nemani, Young S. Lee, Marlon Menezes, Christopher Dennis Bencher, Vijay Parihar
  • Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants
    Patent number: 7968473
    Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
  • PIGMENTED POLYIMIDE FILMS AND METHODS RELATING THERETO
    Publication number: 20110039085
    Abstract: The present disclosure is directed to a base film having a thickness from 8 to 152 microns, a 60 degree gloss value from 2 to 35, an optical density greater than or equal to 2 and a dielectric strength greater than 1400 V/mil. The base film comprises a chemically converted (partially or wholly aromatic) polyimide in an amount from 63 to 96 weight percent of the base film. The base film further comprises a pigment and a matting agent. The matting agent is present in an amount from 1.6 to 10 weight percent of the base film, has a median particle size from 1.3 to 10 microns, and has a density from 2 to 4.5 g/cc. The pigment is present in an amount from 2 to 35 weight percent of the base film. The present disclosure is also directed to coverlay films comprising the base film in combination with an adhesive layer.
    Type: Application
    Filed: August 5, 2010
    Publication date: February 17, 2011
    Applicant: E. I. DU PONT DE NEMOURS AND COMPANY
    Inventors: Thomas Edward Carney, Christopher Dennis Simone
  • NON-POLAR CAPPED NANO TRANSITION METAL OXIDES AND SULFIDES
    Publication number: 20100305332
    Abstract: The present invention relates to a method for the preparation of a functionalized nano size transition metal oxide or sulfide particle comprising the steps of (a) providing a ternary solvent system comprising a polar solvent, a non-polar solvent and an intermediate solvent allowing miscibility of all three components; (b) providing a mixture of a transition metal salt and a ternary solvent; (c) providing a mixture of a suitable source of oxide or sulfide and the ternary solvent; (d) providing a mixture of a non-polar end capping agent and the non-polar solvent; (e) mixing the mixtures; and (f) recovering the resultant functionalized nano size transition metal oxide or sulfide particle. The invention further relates to non-polar end capped nano sized transition metal oxide or sulfide particle so produced and the use of such particles.
    Type: Application
    Filed: May 22, 2007
    Publication date: December 2, 2010
    Applicant: NELSON MANDELA METROPOLITAN UNIVERSITY
    Inventors: Christopher Dennis Woolard, Damien Christopher Williams, Jason Leigh van Rooyen, Katherine Garde, Robert Michael Bosch, Stefanus Hendrik Josephus Strydom
  • Rubber Compositions
    Publication number: 20100292370
    Abstract: The present invention relates to a rubber composition containing a filler comprising at least one rubber containing olefinic unsaturation and functionalized nano transition metal oxide and/or sulfide particles. The invention further relates to a method of manufacture the rubber compositions and to the use of such compositions in tyres, belts and/or hoses.
    Type: Application
    Filed: May 22, 2007
    Publication date: November 18, 2010
    Applicant: Rubber Nano Products (Proprietary) Limited
    Inventors: Christopher Dennis Woolard, Katherine Garde, Robert Michael Bosch
  • Chemokine receptor binding heterocyclic compounds
    Patent number: 7807694
    Abstract: Compounds which modulate chemokine receptor activities are disclosed. These compounds are preferably tertiary amines comprising tetrahydroquinoline and benzimidazole.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: October 5, 2010
    Assignee: Genzyme Corporation
    Inventors: Gary Bridger, Renato Skerlj, Al Kaller, Curtis Harwig, David Bogucki, Trevor R. Wilson, Jason Crawford, Ernest J. McEachern, Bem Atsma, Siqiao Nan, Yuanxi Zhou, Dominique Schols, Christopher Dennis Smith, Maria Rosaria Di Fluri
  • Method of reducing critical dimension bias during fabrication of a semiconductor device
    Patent number: 7737040
    Abstract: An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.
    Type: Grant
    Filed: November 9, 2007
    Date of Patent: June 15, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Dennis Bencher, Melvin Warren Montgomery, Alexander Buxbaum, Yung-Hee Yvette Lee, Jian Ding, Gilad Almogy, Wendy H. Yeh
  • SELF-ALIGNED MULTI-PATTERNING FOR ADVANCED CRITICAL DIMENSION CONTACTS
    Publication number: 20100136792
    Abstract: Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.
    Type: Application
    Filed: October 21, 2009
    Publication date: June 3, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Bencherki Mebarki, Li Yan Miao, Christopher Dennis Bencher, Jen Shu
  • Integral patterning of large features along with array using spacer mask patterning process flow
    Patent number: 7709396
    Abstract: Embodiments of the present invention pertain to methods of forming patterned features on a substrate having an increased density (i.e. reduced pitch) as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask while also allowing both the width of the patterned features and spacing (trench width) between the patterned features to vary within an integrated circuit.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: May 4, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Christopher Dennis Bencher, Jing Tang
  • Polycyclic polyimides and compositions and methods relating thereto
    Patent number: 7691471
    Abstract: The present invention is directed to the use polycyclic diamines. These diamines, when polymerized with dianhydrides, and optionally other non-polycyclic diamines are used to form new polyamic acids. The polyamic acids can be imidized to form a new class of useful polyimide resins and polyimide films, particularly in electronics type applications.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: April 6, 2010
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Jiang Ding, Christian Peter Lenges, Christopher Dennis Simone, Brian C. Auman
  • INTEGRAL PATTERNING OF LARGE FEATURES ALONG WITH ARRAY USING SPACER MASK PATTERNING PROCESS FLOW
    Publication number: 20100075503
    Abstract: Embodiments of the present invention pertain to methods of forming patterned features on a substrate having an increased density (i.e. reduced pitch) as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask while also allowing both the width of the patterned features and spacing (trench width) between the patterned features to vary within an integrated circuit.
    Type: Application
    Filed: September 19, 2008
    Publication date: March 25, 2010
    Applicant: Applied Materials, Inc.
    Inventors: CHRISTOPHER DENNIS BENCHER, Jing Tang
  • BI-LAYER CAPPING OF LOW-K DIELECTRIC FILMS
    Publication number: 20100022100
    Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.
    Type: Application
    Filed: October 5, 2009
    Publication date: January 28, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ping Xu, Christopher Dennis Bencher