Abstract: A method of processing a substrate is described herein. The method includes positioning a substrate on a stage associated with a maskless direct writing pattern generator. The substrate has an undeveloped, unexposed photoresist layer formed thereon. The photoresist layer has a plurality of writing pixel locations. The method includes delivering predetermined doses of electromagnetic energy from the pattern generator to each writing pixel location. A first predetermined dose is a full tone dose, and the first predetermined dose is delivered to at least one writing pixel location. A second predetermined is a fractional tone dose, and the second predetermined dose is delivered to at least one writing pixel location. A third predetermined dose is either a fractional dose or a zero tone dose. The third predetermined dose is delivered to at least one writing pixel location, and the third predetermined dose is different from the second predetermined dose.

Abstract: A system and method for user identification and personalization based on automotive identifiers are described. Image data of a vehicle is received from an image capture device. Vehicle identification information is extracted from the image data. A data record associated with a user is retrieved using the vehicle identification information. A personalized communication for the user is generated based on the retrieved data record. The personalized communication may be transmitted to a device. The personalized communication may comprise a recommendation.

Abstract: A method to selectively process a three dimensional device, comprising providing a substrate having a first surface that extends horizontally, the substrate comprising a structure containing a second surface that extends vertically from the first surface; providing a film on the substrate, the film comprising carbon species; and etching a selected portion of the film by exposing the selected portion of the film to an etchant containing hydrogen species, where the etchant excludes oxygen species and fluorine species.

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract: A system and method for user identification and personalization based on automotive identifiers are described. Image data of a vehicle is received from an image capture device. Vehicle identification information is extracted from the image data. A data record associated with a user is retrieved using the vehicle identification information. A personalized communication for the user is generated based on the retrieved data record. The personalized communication may be transmitted to a device. The personalized communication may comprise a recommendation.

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract: A processing system including at least processing apparatus and at least two independently moveable stages is disclosed. The at least two independently moveable stages are movable between a processing position and at a respective loading position. The at least one processing apparatus may include a maskless pattern generator. The processing system includes a controller configured to instruct the movement of the independently moveable stages in order to minimize the idle time of the processing apparatus. Methods of using the processing system are also disclosed.

Abstract: A method of processing a substrate is described herein. The method includes positioning a substrate on a stage associated with a maskless direct writing pattern generator. The substrate has an undeveloped, unexposed photoresist layer formed thereon. The photoresist layer has a plurality of writing pixel locations. The method includes delivering predetermined doses of electromagnetic energy from the pattern generator to each writing pixel location. A first predetermined dose is a full tone dose, and the first predetermined dose is delivered to at least one writing pixel location. A second predetermined is a fractional tone dose, and the second predetermined dose is delivered to at least one writing pixel location. A third predetermined dose is either a fractional dose or a zero tone dose. The third predetermined dose is delivered to at least one writing pixel location, and the third predetermined dose is different from the second predetermined dose.

Abstract: Certain example embodiments relate to a highly-concurrent, predictable, fast, self-managed, in-process space for storing data that is hidden away from the garbage collector and its related pauses. More particularly, certain example embodiments relate to improved memory management techniques for computer systems that leverage an off-heap direct-memory data store that is massively scalable and highly efficient. The off-heap store may be provided in connection with a Java-based environment, and garbage collection may be completely or nearly completely avoided for the off-heap store. The off-heap store may be integrated into a tiered storage solution in certain example embodiments.

Abstract: Embodiments of the disclosure provide apparatus and methods for localized stress modulation for overlay and edge placement error (EPE) using electron or ion implantation. In one embodiment, a process for correcting overlay error on a substrate generally includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining doping parameters to correct overlay error or substrate distortion based on the overlay error map, and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. Embodiments may also provide performing a doping treatment process on the substrate using the determined doping repair recipe, for example, by comparing the overlay error map or substrate distortion with a database library stored in a computing system.

Abstract: Embodiments of the disclosure provide methods and system for correcting lithographic film stress/strain variations on a semiconductor substrate using laser energy treatment process. In one embodiment, a method for correcting film stress/strain variations on a substrate includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining dose of laser energy in a computing system to correct film stress/strain variations or substrate distortion based on the overlay error map, and providing a laser energy treatment recipe to a laser energy apparatus based on the dose of laser energy determined to correct substrate distortion or film stress/strain variations.

Abstract: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.

Abstract: The present disclosure is directed to a circuit board having a first polyimide coverlay, a first imaged metal layer, a first electrically insulating layer, a second imaged metal layer, a polyimide bondply, a third imaged metal layer, a second electrically insulating layer, a forth imaged metal layer and a second polyimide coverlay. The first polyimide coverlay, the polyimide bondply and the second polyimide coverlay are derived from 100 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2?-bis(trifluoromethyl)benzidine, and 10 to 80 mole % 4,4?-oxydianiline.

Abstract: The present disclosure is directed to a circuit board having a first electrically insulating layer, a first imaged metal layer and a first polyimide coverlay derived from 100 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2?-bis(trifluoromethyl)benzidine, and 10 to 80 mole % 4,4?-oxydianiline. The circuit board does not have an adhesive layer between the first imaged metal layer and the polyimide coverlay.

Abstract: The present disclosure is directed to a circuit board having a first electrically insulating layer, a first imaged metal layer and a first polyimide coverlay comprising a polyimide derived from 80 to 90 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4?-oxydiphthalic anhydride and 100 mole % 2,2?-bis(trifluoromethyl) benzidine. An adhesive layer is not present between the first imaged metal layer and the first polyimide coverlay.

Abstract: The present disclosure is directed to a circuit board having a first imaged metal layer, a first electrically insulating layer, a second imaged metal layer, a polyimide bondply comprising a polyimide derived from 80 to 90 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4?-oxydiphthalic anhydride and 100 mole % 2,2?-bis(trifluoromethyl) benzidine, a third imaged metal layer, a second electrically insulating layer and a fourth imaged metal layer.

Abstract: The present disclosure is directed to a circuit board having a first polyimide coverlay and a second polyimide coverlay derived from 80 to 90 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 10 to 20 mole % 4,4?-oxydiphthalic anhydride and 100 mole % 2,2?-bis(trifluoromethyl) benzidine or 100 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2?-bis(trifluoromethyl) benzidine, and 10 to 80 mole % 4,4?-oxydianiline, a first imaged metal layer, a first electrically insulating layer, a second imaged metal layer, a polyimide bondply having a polyimide derived from 80 to 90 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 10 to 20 mole 4,4?-oxydiphthalic anhydride and 100 mole % 2,2?-bis(trifluoromethyl) benzidine, a third imaged metal layer, a second electrically insulating layer, a fourth imaged metal layer.

Abstract: The present disclosure is directed to a polyimide metal clad laminate. The metal clad laminate has a metal foil and a polyimide layer. The polyimide layer having a polyimide derived from 100 mole % 3,3?,4,4?-biphenyl tetracarboxylic dianhydride, 20 to 90 mole % 2,2?-bis(trifluoromethyl)benzidine, and 10 to 80 mole % 4,4?-oxydianiline. The polyimide metal clad laminate does not have an adhesive layer between the metal foil and the polyimide layer.

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.