Abstract: A method of aligning elements of an electron beam beam tool such as an electron beam projection lithography tool utilizes a detector such as a pinhole and scintillator over which an image is rastered to provide a real-time display of a projected image at a target plane. A shaping aperture is projected and the detector centered thereon. A reticle sub-field image is then centered on and aligned with the image of the shaping aperture and the compound image thus formed is rotated using deflectors. The compound image is then aligned with movement of a translation device at the target plane using lenses and compound image orientation is corrected by electrical or mechanical rotation of the deflectors. Sub-field size can then be adjusted and any observed further rotation of the compound image may be corrected by reiteration of rotation adjustment with lenses and deflectors, in sequence.

Abstract: A method of adjusting a lithography system or tool to enhance image quality correction is presented. The method enhances image quality correction by using a reduced dose during exposure of the lithographic test patterns. A typical lithography system (tool) comprises an exposure column unit and a control unit. The exposure column unit generates a shaped beam and directs this shaped beam through lenses and a series of deflectors to a mask which is positioned on a movable stage. The control unit provides control management for the components of the exposure column unit. The system maximizes pattern resolution using a mask having test pattern geometries that are at least the same size as the geometries of the pattern of a production mask. The reduced exposure dose used for the lithographic test patterns results in greater sensitivity to small beam setup errors.

Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Abstract: An apparatus and method are provided for developing photoresist patterns on electronic component substrates such as semiconductor wafers. The method and apparatus use a specially defined developer composition in sequence with a specially defined rinse composition to develop an exposed photoresist pattern and then to rinse the developed pattern. Both the developer composition and rinse composition contain an anionic surfactant and, when the solutions are used in sequence, have been found to provide a resist pattern which avoids pattern collapse even when small features such as line widths less than 150 nm with aspect ratios of greater than about 3 are formed. It is preferred to use a puddle developing and puddle rinsing process to develop and rinse the exposed wafer. Preferred anionic surfactants are ammonium perfluoroalkyl sulfonate and ammonium perfluoroalkyl carboxylate.

Abstract: A resistive heater element is integrally formed with a beam shaping aperture foil by lithographic patterning of a doped semiconductor layer of which the aperture foil is formed over an insulator, resulting in a device of greatly increased structural robustness and reliability. Heat provided to the aperture foil by the heater element greatly reduces the accretion of deposits thereon which can distort the aperture shape and/or, deflect the beam when electrostatic charge accumulates thereon. The lithographic patterning process for fabricating the integral heater and aperture foil is only slightly increased in complexity from the current process for fabricating an aperture foil alone by an additional resist application and exposure, ohmic contact formation and use of an additional etchant and is of high yield.

Abstract: Keyhole shaped slit apertures, sized and oriented to define a desired deflected beam trajectory, such as a planar curvilinear trajectory, are provided for respective deflectors of a charged particle beam system. The beam is statically deflected to a maximum deflection using all deflectors above/prior to a particular slit aperture along the path of the charged particle beam and then scanned in directions orthogonal and parallel to the direction of static deflection while recording current of the charged particle beam intercepted by edges of each slit aperture, in sequence. Correction of deflector alignment and/or driver current (or voltage) is made based on recorded intercepted beam current. The sequence of correction is repeated for calibration, deflection/axis compensation, beam centering and deflection gain and axis compensation parameter adjustment.