Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

Abstract: A component in a semiconductor processing chamber is provided. An electrically conductive semiconductor or metal body has a CTE of less than 10.0×10?6/K. An intermediate layer is disposed over at least one surface of the body, the intermediate layer comprising a fluoropolymer. A perfluoroalkoxy alkane (PFA) layer is disposed over the intermediate layer to form the component.

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

Abstract: A barge-type wind turbine platform in combination with a heel tank damper includes a barge-type wind turbine platform having a keystone, two pairs of bottom beams, each including two bottom beams connected to opposite sides of the keystone, wherein the combined pairs of bottom beams define a foundation. A U-shaped ballast conduit is mounted or formed within each of the pairs of bottom beams. Each ballast conduit has ballast water therein, the ballast water extending from an outwardly extending portion of each bottom beam of each pair of bottom beams, such that a volume of air is defined between a surface of the ballast water in each outwardly extending portion and an outwardly facing wall of each outwardly extending portion, and an internal damping element is provided within each ballast conduit. A heel tank damper is defined by the ballast conduits and their respective internal damping elements.

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

Abstract: A moveable edge ring system for a substrate processing system includes a top moveable ring including a first annular body arranged around a substrate support. The top moveable ring is exposed to plasma during substrate processing. A moveable support ring is arranged below the top moveable ring and radially outside of a baseplate of the substrate support and includes a second annular body. A shield ring is arranged radially outside of the moveable support ring and includes a third annular body. A cover ring includes a fourth annular body arranged above a radially outer edge of the top moveable ring. An actuator and a lift pin are configured to adjust a position of the top moveable ring and the moveable support ring relative to the shield ring and the cover ring.

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10?6/K. A metal oxide layer is then disposed over a surface of the component body.

Abstract: An edge ring system for a substrate processing system includes a top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the top edge ring is smaller than a horizontal opening of a substrate port of the substrate processing system. A first edge ring is arranged below the top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the first edge ring is larger than the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than the inner diameter of the top edge ring.

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

Abstract: A controller including a voltage sensor coupled to a heater trace integrated in an electrostatic chuck, the voltage sensor configured to sense a voltage difference across the heater trace, wherein the heater trace is associated with a heater zone. The controller including a current sensor coupled to the heater trace and configured to sense a current in the heater trace. The controller including a resistance identifier configured to identify a resistance of the heater trace based on the voltage difference and the current that is sensed. The controller including a temperature correlator configured to approximate a temperature of the heater zone based on the resistance and a correlation function of the heater trace. The correlation function uses a temperature coefficient of resistance of the heater trace.

Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

Abstract: A lift pin mechanism employed within a process module includes a plurality of lift pins distributed uniformly along a circumference of a lower electrode defined in the process module. Each lift pin includes a top member that is separated from a bottom member by a collar defined by a chamfer. A sleeve is defined in a housing within a body of the lower electrode on which a substrate is received for processing. The housing is disposed below a mid ring that is defined in the lower electrode. The collar of the lift pin is used to engage with a bottom side of the sleeve, and a top side of the sleeve is configured to engage with the mid ring, when the lift pins are activated. An actuator coupled to each of the plurality of lift pins and an actuator drive connected to the actuators is used to drive the plurality of lift pins. A controller is coupled to the actuator drive to control movement of the plurality of lift pins.

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.