Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

Abstract: An edge ring is provided for use with an electrostatic wafer chuck and an electrostatic ring chuck with a central aperture with a cooling groove and with ring clamping electrodes and at least one ring backside temperature channel to regulate the temperature of the edge ring. The edge ring comprises an edge ring body to be placed over the electrostatic ring chuck with ring clamping electrodes, wherein the edge ring body comprises conductive portions which are placed over the ring clamping electrodes, when the edge ring body is placed over the electrostatic ring chuck and a first elastomer ring integrated to a first surface of the edge ring body and surrounding a central aperture of the first surface, wherein when the edge ring body is placed over the electrostatic ring chuck, the first elastomer ring is used to seal the cooling groove.

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

Abstract: A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly.

Abstract: A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly.

Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.

Abstract: A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.

Abstract: A plasma processing chamber with a probe apparatus configured to measure a set of electrical characteristics in a plasma is disclosed. The plasma processing chamber includes a set of plasma chamber surfaces configured to be exposed to the plasma. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.

Abstract: An electrical connector has a non-conductive outer housing and a spring-loaded conductive assembly mounted within. The non-conductive outer housing has a longitudinal axis along which the spring-loaded conductive assembly is allowed to move over a limited range, in either direction. The conductive assembly includes a conductive contact pad and an conductive elongated shaft which are mated together within the non-conductive outer housing. A spring mounted along the contact shaft and in abutment therewith biases the contact shaft in a direction away from the contact base. When the electrical connector is employed in a chamber lid of a chamber lid assembly having an integrated laminated heater, such as for use in conjunction with a wafer processing chamber, the spring biases a lower surface of the contact shaft against the heater.

Abstract: A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

Abstract: A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

Abstract: An electrical connector has a non-conductive outer housing and a spring-loaded conductive assembly mounted within. The non-conductive outer housing has a longitudinal axis along which the spring-loaded conductive assembly is allowed to move over a limited range, in either direction. The conductive assembly includes a conductive contact pad and an conductive elongated shaft which are mated together within the non-conductive outer housing. A spring mounted along the contact shaft and in abutment therewith biases the contact shaft in a direction away from the contact base. When the electrical connector is employed in a chamber lid of a chamber lid assembly having an integrated laminated heater, such as for use in conjunction with a wafer processing chamber, the spring biases a lower surface of the contact shaft against the heater.

Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. Tile probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk stricture is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

Abstract: A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

Abstract: A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.