Abstract: Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.

Abstract: A semiconductor light emitting device has an n-type layer, a p-type layer, and a light-emitting active layer arranged between the p-type layer and the n-type layer, the active layer having alternating regions of doped and undoped materials. A double heterojunction light emitting device has a bulk active layer having doped portions alternating with undoped portions. A method of manufacturing a light emitting device includes forming a first layer arranged on a substrate, growing an active layer, selectively adding impurities at predetermined times during the growing of the active layer, and forming a second layer arranged on the active layer.

Abstract: Highly compact vertical cavity surface emitting laser structures formed by a lateral oxidation process are provided. Specifically, well-controlled oxidized regions bound and define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized, and which results in a highly reproducible and manufacturable process.

Abstract: A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer material typically also includes nitride. The aperture layer is etched to create an aperture which is then filled with a conducting material by epitaxial regrowth. The amorphous layer is crystallized forming an electrically resistive material during or before regrowth. The conducting aperture in the electrically resistive material is well suited for directing current into a light emitting region of the active layer.

Abstract: A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.

Abstract: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Abstract: A structure and method for improving UV LED efficiency is described. The structure utilizes a tunnel junction to separate a P-doped layer of the LED from a n-doped contact layer. The n-doped contact layer allows the use of a highly reflective, low work function metal, such as aluminum, for the p-side contact. The reflectivity at the contact can be further improved by including a phase matching layer in some areas between the contact metal (The metal above the phase matching layer does not necessarily need to have a low work function because it does need to form an ohmic contact with the n-contact layer) and the n-doped contact layer.

Abstract: A method of making a curved sensor is described. The method involves projecting portions of a curved three dimensional structure such as a hemisphere onto a two dimensional substrate in an outline pattern. The outline pattern typically serves as a perimeter of a sensor. After forming a sensor in the shape of the outline pattern, the two dimensional substrate is flexed to form a three dimensional sensor structure.

Abstract: According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.

Abstract: A printing plate has a substrate, an array of cells on the substrate, wherein each cell corresponds to an element of a print image, a deformable polymer material localized into the cells such that each cell is at least partially formed from the deformable polymer material, a reservoir corresponding to each cell to collect the deformable polymer material as needed when the deformable polymer material is one of either melted or softened, and a heater to cause the deformable polymer material to either melt or soften.

Abstract: A bottom-emitting nitride light-emitting device with enhanced light extraction efficiency is provided. The increased light output is provided by the reflector that redirects upward-going light towards the bottom output. A mesh contact area, in one form, spreads current across the entire carrier injection area without occupying the entire top surface of the device.

Abstract: A method and structure for forming a spring structure that avoids undesirable kinks in the spring is described. The method converts a portion of a release layer such that the converted portion resists etching. The converted portion then serves as an anchor region for a spring structure deposited over the release layer. When the non-converted portions of the release layer are etched, the spring curls out of the plane of a plane.

Abstract: An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A variable period variable composition superlattice strain relief region is provided over the template layer such that the composition of the strain relief region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the strain relief region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) assembly including a VCSEL structure having a light-emitting region located on its surface, a relatively wettable region of a surface modifier coating formed over the light emitting region, and a microlens formed on the relatively wettable region. A relatively non-wettable region of the surface modifier coating is formed around the light-emitting region (e.g., on the electrode surrounding the light-emitting region). The surface modifier coating is formed, for example, from one or more organothiols that change the surface energies of the light-emitting region and/or the electrode to facilitate self-assembly and self-registration of the microlens material. The microlens material is printed, microjetted, or dip coated onto the VCSEL structure such that the microlens material wets to the relatively wettable region, thereby forming a liquid bead that is reliably positioned over the light-emitting region. The liquid bead is then cured to form the microlens.

Abstract: A microlens structure is mounted directly onto the upper surface of a packaged VCSEL device and positioned to locate microlenses directly over corresponding VCSEL elements. The microlens structure includes a block-like pedestal having a lower surface that faces the upper surface of the VSCEL device. The microlenses are formed in a central region of the lower surface, and several legs (stand-offs) extend from peripheral edges of the lower surface. During assembly, the VCSEL device is positioned under the microlens structure such that each microlens is aligned over its corresponding VCSEL element, and then raised until the legs contact the upper surface of the VCSEL device. The legs serve to self-align the microlenses to the VCSEL device, and are sized to maintain an optimal distance between the microlenses and the VCSEL elements. The pedestal is attached to a carrier plate that is secured to an IC package housing the VCSEL device.

Abstract: Lasers, such as in laser structures, can include two or more semiconductor structures that are substantially identical or that include the same semiconductor material and have substantially the same geometry, such as in closely spaced dual-spot two-beam or quad-spot four-beam lasers. The lasers can also include differently structured current flow or contact structures or different wavelength control structures. For example, current flow or contact structures can be differently structured to prevent or otherwise affect phase locking, such as by causing different threshold currents and different operating temperatures.

Abstract: A curved transmission-line spring structure formed by self-bending materials (e.g., stress-engineered materials, intermetallic compounds and/or bimorphs) that are layered to form a stripline or microstrip transmission line. A dielectric layer is sandwiched between two conductive layers, which form the signal and ground lines of the structure. The various layers are etched to form an elongated spring structure, and then one end of the spring structure is released from the underlying substrate, causing the tip of the released end to bend away from the substrate for contact with a second device. One or both of the conductive layers is fabricated using self-bending spring metals to facilitate the bending process, and plated metal is utilized for conductivity. Alternatively, or in addition, the dielectric layer is formed using a stress-engineered dielectric material. Two-tip and three-tip structures are used to facilitate connection of both the ground and signal lines.

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

Abstract: A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity at a point. In applications where beam coherence from the VCSEL array is desirable, high gain coupling regions break the continuity of the oxide wall surrounding each VCSEL aperture. The high gain coupling regions connect adjacent VCSELs in the VCSEL array thereby allowing mode coupling between adjacent lasers and the output of a coherent beam of light.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.