Abstract: In some embodiments, an integrated circuit package includes a substrate and a heat spreader coupled to the substrate by fasteners. Thermal interface material thermally couples the die to the heat spreader. The heat spreader is provided over the die and is attached to the substrate with fasteners rather than a sealant-adhesive. Some examples of suitable fasteners may include rivets, barbed connectors, and gripping clips.

Abstract: Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.

Abstract: A semiconductor die having a through via formed therein is disclosed. A first conductive layer is formed on the front side of the die and a second conductive layer is formed on the backside of the die, and coupled with the through via. A first package substrate is electrically coupled with the first conductive layer, and a second package substrate is electrically coupled with the second conductive layer. In another embodiment, a substrate ball electrically couples the first and second package substrates. In a further embodiment, a flip chip bump is attached to the first package substrate.

Abstract: A method is described for laser scribing or dicing portions of a workpiece using multi-source laser systems. In one embodiment, a first laser uses multiphoton absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece. In an alternative embodiment, a first laser uses high energy single-photon absorption to lower the ablation threshold of portions of the workpiece prior to a second laser ablating the portions of the workpiece.

Abstract: In some embodiments, a method includes picking up a clip with a chuck, and, while holding the clip with the chuck, picking up an integrated circuit (IC) die with the IC die in contact with the clip.

Abstract: An assembly including a heat dissipation device having an attachment surface, a substrate having an attachment surface, and a plurality of metal balls extending between the heat dissipation device attachment surface and the substrate attachment surface. The assembly may include at least one microelectronic die disposed between the heat dissipation device attachment surface and the substrate attachment surface.

Abstract: In some embodiments, a method includes providing a composition which includes a base at least partially filled with filler particles and applying the composition as an underfill composition. At least some of the filler particles are electrically conductive.

Abstract: A composition including an amount of at least one vinyl terminated polymer; an amount of at least one cross-linker comprising a terminal Si—H unit; an amount of at least one thermally conductive first filler, and at least one thermally conductive second filler, wherein a melting point of the first filler is greater than the melting point of the second filler. An apparatus including a package configured to mate with a printed circuit board; a semiconductor device coupled to the package; a thermal element; and a curable thermal material disposed between the thermal element and the semiconductor device.

Abstract: A microelectronic package including a microelectronic die having through silicon vias extending through a back surface thereof, which allows both an active surface and the back surface of the microelectronic die to have power, ground, and/or input/output signals connected to a flexible substrate. The flexible substrate may further connected to an external substrate through at least one external contact.

Abstract: Apparatus and methods are provided wherein the reflowable electrically conductive interconnect material coupling the interconnects and/or land-side components of a microelectronic package is protected from elevated temperatures, such as those associated with reflow processes and environments which exceed the melting temperature of the interconnect material. One embodiment of the method provides covering the interconnect material about the interconnects and/or land-side components with heat-resistant curable material which protects the interconnect material from the elevated temperature and provides structural support to the interconnects and/or land-side components at the elevated temperature.

Abstract: A method of bonding a wire to a bond pad on an electronic or photonic device is provided. A section of the wire is held within a bond head of the wirebonding apparatus. A laser beam is directed onto the bond pad. Energy of the laser beam heats the bond pad to the temperature that is higher than the temperature of the device. The bond head is subsequently moved toward the device to bring a portion of the wire into contact with the bond pad. Ultrasonic energy is provided to an interface between the portion of the wire and the bond pad.

Abstract: A system may direct first energy to only a first interconnect element, the first interconnect element contacting a first conductive contact of a first device and a second conductive contact of a second device. A first electrical connection may be formed between the first conductive contact and the second conductive contact based at least in part on the first energy. Further, second energy may be directed to only a second interconnect element, the second interconnect element contacting a third conductive contact of the first device and a fourth conductive contact of the second device. A second electrical connection may be formed between the third conductive contact and the fourth conductive contact based at least in part on the second energy.

Abstract: A composition including an amount of at least one vinyl terminated polymer; an amount of at least one cross-linker comprising a terminal Si—H unit; an amount of at least one thermally conductive first filler, and at least one thermally conductive second filler, wherein a melting point of the first filler is greater than the melting point of the second filler. An apparatus including a package configured to mate with a printed circuit board; a semiconductor device coupled to the package; a thermal element; and a curable thermal material disposed between the thermal element and the semiconductor device.

Abstract: Embodiments of the invention includes a heat dissipating device. The heat dissipating device includes a main body having a surface, wherein the surface is plated or coated with at least two different metals to form a design effective for bonding to solder and for adhering to polymer in a polymer solder hybrid. The heat dissipating device also includes surface perturbations.

Abstract: In some embodiments, an integrated circuit package includes a substrate and a heat spreader coupled to the substrate by fasteners. Thermal interface material thermally couples the die to the heat spreader. The heat spreader is provided over the die and is attached to the substrate with fasteners rather than a sealant-adhesive. Some examples of suitable fasteners may include rivets, barbed connectors, and gripping clips.

Abstract: A microelectronic package including a microelectronic die having through silicon vias extending through a back surface thereof, which allows both an active surface and the back surface of the microelectronic die to have power, ground, and/or input/output signals connected to a flexible substrate. The flexible substrate may further connected to an external substrate through at least one external contact.

Abstract: A device and method identify and compensate for tensile stress due to heat-caused expansion and contraction between an integrated heat spreader and thermal interface material. This device and method change the shape of the integrated heat spreader based upon the identification of the location of the highest tensile and/or shear stress so that additional thermal interface material is deposited between the integrated heat spreader and a die. Utilizing this method and device, heat is efficiently transferred from the die to the integrated heat spreader.

Abstract: A method of bonding a wire to a bond pad on an electronic or photonic device is provided. A section of the wire is held within a bond head of the wirebonding apparatus. A laser beam is directed onto the bond pad. Energy of the laser beam heats the bond pad to the temperature that is higher than the temperature of the device. The bond head is subsequently moved toward the device to bring a portion of the wire into contact with the bond pad. Ultrasonic energy is provided to an interface between the portion of the wire and the bond pad.

Abstract: An assembly including a heat dissipation device having an attachment surface, a substrate having an attachment surface, and a plurality of metal balls extending between the heat dissipation device attachment surface and the substrate attachment surface. The assembly may include at least one microelectronic die disposed between the heat dissipation device attachment surface and the substrate attachment surface.

Abstract: A composition including an amount of at least one vinyl terminated polymer; an amount of at least one cross-linker comprising a terminal Si—H unit; an amount of at least one thermally conductive first filler, and at least one thermally conductive second filler, wherein a melting point of the first filler is greater than the melting point of the second filler. An apparatus including a package configured to mate with a printed circuit board; a semiconductor device coupled to the package; a thermal element; and a curable thermal material disposed between the thermal element and the semiconductor device.