Patents by Inventor Christopher M. Laighton

Christopher M. Laighton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10374280
    Abstract: A quadrature coupler having: a pair of overlying strip conductors separated by a first dielectric layer to provide a coupling region between the coupling region of overlying strip conductors; a pair of opposing ground pads, the coupling region being disposed between the pair of opposing ground pads; a second dielectric layer disposed over the coupling region and between the pair of opposing ground pads; and an electrically conductive shield layer disposed over the second dielectric layer, extending over opposing sides of the dielectric layer and onto the pair of opposing ground pads. Portions of coupler are formed by printing or additive manufacturing.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: August 6, 2019
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Publication number: 20190239340
    Abstract: An electrically conductive shield for a microwave transmission line-electrical connector interconnect region wherein the microwave transmission line is connected to the electrical connector. An elastic, dielectric material is disposed between opposing surfaces of the dielectric structure and the housing. An electrically conductive material is disposed on an outer surface of the elastic, dielectric material to provide an electrically conductive shield. The electrically conductive shield is disposed over the opposing surfaces of the dielectric structure and the housing.
    Type: Application
    Filed: January 31, 2018
    Publication date: August 1, 2019
    Applicant: Raytheon Company
    Inventors: Susan C. Trulli, Christopher M. Laighton, Elicia K. Harper
  • Patent number: 10321555
    Abstract: An RF circuit module having RF and DC contacts on a surface of a circuit board. An RF component having RF and DC contacts is disposed in a cavity of the circuit board. Electrical connectors bridge the cavity to connect the RF contacts on the circuit board to the RF contacts on the RE component and the DC, contacts on the circuit board to the DC contacts on the RF component. A plug member is disposed in the cavity which has a dielectric member with an outer portion disposed over the RF and DC contacts on the circuit board and an inner portion elevated above the RF and DC contacts the RF component. The plug member has one portion of electrical conductors disposed on an upper surface of the inner portion and another portion disposed under the outer portion on, and electrically connected to, the DC contacts on the circuit board.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: June 11, 2019
    Assignee: Raytheon Company
    Inventors: Susan C. Trulli, Christopher M. Laighton, Elicia K. Harper
  • Patent number: 10263566
    Abstract: An amplifier having a Radio Frequency (RF) power level detector circuit for producing a control signal in accordance with a power level of an RF input signal. The control signal indicates whether the power level of the input signal is within a predetermined range of power levels greater than zero. A bias circuit is fed by the control signal, for producing a fixed bias voltage at a gate electrode of a field effect transistor (FET) to establish a predetermined quiescent current for the FET when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: April 16, 2019
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Alan J. Bielunis, Edward A. Watters
  • Publication number: 20190097580
    Abstract: An amplifier having a Radio Frequency (RF) power level detector circuit for producing a control signal in accordance with a power level of an RF input signal. The control signal indicates whether the power level of the input signal is within a predetermined range of power levels greater than zero. A bias circuit is fed by the control signal, for producing a fixed bias voltage at a gate electrode of a field effect transistor (FET) to establish a predetermined quiescent current for the FET when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.
    Type: Application
    Filed: September 28, 2017
    Publication date: March 28, 2019
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Alan J. Bielunis, Edward A. Watters
  • Patent number: 10243246
    Abstract: A phase shifter is formed by providing a branchline coupler having a pair of phase adjusting sections. Each one of the phase adjusting sections is coupled to a corresponding one of a pair of shunt transmission line sections of the branchline coupler. Each one of the pair of phase adjusting sections includes: first and second conductive pads are disposed on the surface of a substrate having a gap between them; one of the pads being connected to a ground plane conductor on a bottom surface of the substrate. A series of conductive layer segment is sequentially written on the surface of the substrate in the gap electrically connected to sidewalls of the first and second pads. Phase shift through the phase shifter is measured after each one of the segments is written. The writing process is terminated when the measuring detects a predetermined phase shift through the phase shifter.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: March 26, 2019
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Publication number: 20190074567
    Abstract: An RF coupler having: a pair of input ports; a pair of output ports; and a coupling region for coupling: a portion of an input signal at a first one of the input ports to first of the pair of output ports and another portion of the input signal fed to the first one of the input ports a second one of the output ports; and one portion of an input signal fed to a second one of the input ports to the second of the pair of output ports and another portion of the input signals fed to the second one of the input ports to the second one of the output ports. The coupling region comprises a plurality of serially connected, vertically stacked, coupling sections. Each one of a plurality of electrically conductive layers is disposed between a pair of the vertically stacked coupling sections.
    Type: Application
    Filed: September 1, 2017
    Publication date: March 7, 2019
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Patent number: 10218045
    Abstract: A microwave transmission line structure having a pair of ground strip conductors on a surface of a dielectric substrate structure. A signal strip conductor is disposed on the surface of the dielectric substrate structure between the pair of ground strip conductors. A solid dielectric layer is disposed over: the signal strip conductor; the upper surface of the dielectric substrate structure between sides of each one of the ground strip conductors; and the signal strip conductor. An electrically conductive shield member is disposed on the solid dielectric layer and on, and in direct contact with, upper surfaces of the pair of ground strip conductors. The structure is used on each one of a plurality of proximate microwave transmission lines formed on the substrate structure to electrically isolate the transmission line.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: February 26, 2019
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Patent number: 10199470
    Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of carriers through each one of the plurality of active regions between a source electrode and a drain electrode.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: February 5, 2019
    Assignee: Raytheon Company
    Inventors: Alan J. Bielunis, Istvan Rodriguez, Christopher M. Laighton
  • Publication number: 20190036189
    Abstract: A phase shifter is formed by providing a branchline coupler having a pair of phase adjusting sections. Each one of the phase adjusting sections is coupled to a corresponding one of a pair of shunt transmission line sections of the branchline coupler. Each one of the pair of phase adjusting sections includes: first and second conductive pads are disposed on the surface of a substrate having a gap between them; one of the pads being connected to a ground plane conductor on a bottom surface of the substrate. A series of conductive layer segment is sequentially written on the surface of the substrate in the gap electrically connected to sidewalls of the first and second pads. Phase shift through the phase shifter is measured after each one of the segments is written. The writing process is terminated when the measuring detects a predetermined phase shift through the phase shift through the phase shifter.
    Type: Application
    Filed: July 26, 2017
    Publication date: January 31, 2019
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Patent number: 10158156
    Abstract: A microwave transmission line having a coplanar waveguide and a pair of conductive members, each one of the pair of conductive members having a proximal end disposed on a portion of a corresponding one of a pair of ground plane conductors of the coplanar waveguide and a distal end disposed over, and vertically spaced from, a region between a center conductor of the coplanar waveguide and a corresponding one of the pair of ground plane conductors of the coplanar waveguide. The distal ends are laterally separated from each other by a region disposed over the center conductor.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: December 18, 2018
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Edward A. Watters, Keith R. Kessler
  • Publication number: 20180358675
    Abstract: A microwave transmission line structure having a pair of ground strip conductors on a surface of a dielectric substrate structure. A signal strip conductor is disposed on the surface of the dielectric substrate structure between the pair of ground strip conductors. A solid dielectric layer is disposed over: the signal strip conductor; the upper surface of the dielectric substrate structure between sides of each one of the ground strip conductors; and the signal strip conductor. An electrically conductive shield member is disposed on the solid dielectric layer and on, and in direct contact with, upper surfaces of the pair of ground strip conductors. The structure is used on each one of a plurality of proximate microwave transmission lines formed on the substrate structure to electrically isolate the transmission line.
    Type: Application
    Filed: June 7, 2017
    Publication date: December 13, 2018
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Publication number: 20180358676
    Abstract: A quadrature coupler having: a pair of overlying strip conductors separated by a first dielectric layer to provide a coupling region between the coupling region of overlying strip conductors; a pair of opposing ground pads, the coupling region being disposed between the pair of opposing ground pads; a second dielectric layer disposed over the coupling region and between the pair of opposing ground pads; and an electrically conductive shield layer disposed over the second dielectric layer, extending over opposing sides of the dielectric layer and onto the pair of opposing ground pads. Portions of coupler are formed by printing or additive manufacturing.
    Type: Application
    Filed: June 13, 2017
    Publication date: December 13, 2018
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Patent number: 9978698
    Abstract: A structure having pair of structure members separated by a gap and an interconnect structure member disposed in the gap. The interconnect structure member includes: a fill-structure having opposing sides in direct contact with the opposing sides of the first structure member and the second structure member; and, an interconnecting microwave transmission line disposed on the fill-structure electrically interconnecting the microwave transmission line of the first structure member to the second member structure. An electrically conductive member is disposed over a signal line of, and electrically connected to the ground conductor the interconnecting microwave transmission.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 22, 2018
    Assignee: Raytheon Company
    Inventors: Susan C. Trulli, Christopher M. Laighton, Elicia K. Harper
  • Publication number: 20180130888
    Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of comers through each one of the plurality of active regions between a source electrode and a drain electrode.
    Type: Application
    Filed: November 8, 2016
    Publication date: May 10, 2018
    Applicant: Raytheon Company
    Inventors: Alan J. Bielunis, Istvan Rodriguez, Christopher M. Laighton
  • Publication number: 20180131066
    Abstract: A microwave transmission line having a coplanar waveguide and a pair of conductive members, each one of the pair of conductive members having a proximal end disposed on a portion of a corresponding one of a pair of ground plane conductors of the coplanar waveguide and a distal end disposed over, and vertically spaced from, a region between a center conductor of the coplanar waveguide and a corresponding one of the pair of ground plane conductors of the coplanar waveguide. The distal ends are laterally separated from each other by a region disposed over the center conductor.
    Type: Application
    Filed: June 20, 2016
    Publication date: May 10, 2018
    Applicant: Raytheon Company
    Inventors: Christopher M. Laighton, Edward A. Watters, Keith R. Kessler
  • Publication number: 20170293017
    Abstract: A transmit/receive module having a switch, a load and a controller for coupling radar energy fed to switch to the load during a time interval subsequent to the controller producing a transmit enable signal to the transmit/receive module and prior to the controller producing a receive enable signal to the transmit/receive module.
    Type: Application
    Filed: April 8, 2016
    Publication date: October 12, 2017
    Applicant: Raytheon Company
    Inventors: Steven C. Evangelista, Christopher M. Laighton, Anthony J. Silva
  • Publication number: 20170271281
    Abstract: A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.
    Type: Application
    Filed: July 5, 2016
    Publication date: September 21, 2017
    Applicant: Raytheon Company
    Inventors: Istvan Rodriguez, Christopher M. Laighton, Alan J. Bielunis
  • Patent number: 9755333
    Abstract: A high power RF connector receptacle having a solderable pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: September 5, 2017
    Assignee: Raytheon Company
    Inventors: Christopher M. Laighton, Istvan Rodriguez, Alan J. Bielunis
  • Patent number: 9698144
    Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: July 4, 2017
    Assignee: Raytheon Company
    Inventors: Istvan Rodriguez, Christopher M. Laighton, Alan J. Bielunis