Abstract: A shoe comprising a sole and an upper secured to the sole. The sole has a sole bottom surface, a plurality of first lugs projecting generally downwardly from the sole bottom surface, and a plurality of second lugs projecting generally downwardly from the sole bottom surface. Each lug of the first plurality of lugs has a distal end surface facing a first direction which is oblique relative to the longitudinal axis of such each first lug. Each lug of the second plurality of lugs has a distal end surface facing a second direction which is oblique relative to the longitudinal axis of such each second lug, and wherein the second direction is different than the first direction.

Abstract: A gas sensor system (100) comprising at least one first field effect transistor (200) comprising first source and drain electrodes and at least one second field effect transistor (300) comprising second source and drain electrodes different from the first source and drain electrodes. Different responses of the first and second FETs to gases in an environment may be used to differentiate between the gases, for example to differentiate between 1-methylcyclopropene and ethylene in locations where fruit is stored.

Abstract: A gas sensor system for measuring a plurality of gases in an environment. The gas sensors system comprises multiple gas sensors where each of the gas sensors includes a pair of electrodes separated by a semiconducting material. The gas pairs of electrodes of the gas sensors are separated by different distances in each of the gas sensors. Resistivity of the semiconducting material of the gas sensors changes in the presence of a first gas and a contact resistivity between the electrodes and the semiconducting material of gas sensors changes in the presence of a second gas. From measurements of total resistivity of each of the gas sensors the presence and/or the concentration of both the first and the second gas sensors can be determined.

Abstract: A top gate thin film transistor gas sensor for detecting or measuring a concentration of a target gas. The gas sensor is configured so that the target gas can pass through the top gate and interact with a semiconducting layer of the gas sensor. The top gate may not cover a channel of the semiconducting layer disposed beneath the top gate so that the target gas may communicate with the channel without impedance by the top gate. The top gate may be patterned with channels through which the target gas may pass through the top gate to the channel in the semiconducting layer. The top gate may be permeable to the target gas allowing passage of the target gas to the channel. A substrate on which the semiconducting layer is formed may be permeable to the target gas allowing the target gas to communicate with the channel.

Abstract: A gas sensor system is made up of a first gas sensor that is sensitive to both a target gas (200) and a secondary gas and a second sensor (300) that is only sensitive to the target gas. The response of the two gas sensors is processed to detect a presence of or a concentration of the target gas. The first sensor includes a semiconductor material that is sensitive to the presence of both the target and the secondary gas and electrodes that are sensitive to the presence of the target gas. The second sensor includes a semiconductor material that is sensitive to the presence of both the target and the secondary gas, but also includes a blocking layer on a surface of at least one of the electrodes that prevents the second gas interacting with the electrodes.

Abstract: A thin film transistor gas sensor and a method of sensing a target gas using the thin-film transistor gas sensor. A gate electrode of the thin film transistor gas sensor has a conductive layer with a surface in direct contact with a dielectric layer of the thin-film transistor. The work function at the surface changes when it comes into contact with a target gas, for example the gate electrode may be formed from gold and have a surface work function that changes when the surface of the gold gate electrode comes into contact with a gas, such as 1-methylcyclopropene.

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Abstract: A gas sensor system (100) comprising at least one first field effect transistor (200) comprising first source and drain electrodes and at least one second field effect transistor (300) comprising second source and drain electrodes different from the first source and drain electrodes.

Abstract: Provided is a polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives. The semiconductor compound is distributed homogeneously in the semiconducting layer in the direction parallel to the surface of the electrodes. This improved lateral distribution of the semiconductor compound in the semiconducting layer provides a reduced contact resistance, particularly for short channel length devices.

Abstract: Provided is a solution comprising a polymer and an organic semiconductor compound, wherein the semiconductor compound is a thiophene derivative, and wherein the solvent is a mixture comprising a) at least one of 4-methyl anisole, indane and an alkylbenzene with a linear or branched alkyl group containing from 4 to 7 carbon atoms; and b) at least one of tetrahydronaphthalin and 1,2,4-trimethylbenzene.

Abstract: Provided is a polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives. The semiconductor compound is distributed homogeneously in the semiconducting layer in the direction parallel to the surface of the electrodes. This improved lateral distribution of the semiconductor compound in the semiconducting layer provides a reduced contact resistance, particularly for short channel length devices.

Abstract: There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.

Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

Abstract: An organic thin film transistor comprising source and drain electrodes (103, 105); a semiconducting region between the source and drain electrodes; a charge-transporting layer (107) comprising a charge-transporting material extending across the semiconducting region and in electrical contact with the source and drain electrodes; an organic semiconducting layer (109) comprising an organic semiconductor extending across the semiconducting region; a gate electrode (113); and a gate dielectric (111) between the gate electrode and the organic semiconducting layer.

Abstract: A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15° C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein R1 is selected from C1-6 alkyl and OC1-6 alkyl; and R2 and R3 are each independently selected from H and CC1-6 alkyl.

Abstract: Provided is a solution comprising a polymer and an organic semiconductor compound, wherein the semiconductor compound is a thiophene derivative, and wherein the solvent is a mixture comprising a) at least one of 4-methyl anisole, indane and an alkylbenzene with a linear or branched alkyl group containing from 4 to 7 carbon atoms; and b) at least one of tetrahydronaphthalin and 1,2,4-trimethylbenzene.

Abstract: An organic semiconductor composition including at least one solvent, a polymer, a first small molecule organic semiconductor and a small molecule crystallization modifier. The first small molecule organic semiconductor:small molecule crystallization modifier weight ratio is at least 6:1, optionally at least 10:1, optionally at least 20:1. The small molecule crystallization modifier increases the uniformity of the first small molecule organic semiconductor distribution in an organic semiconductor layer deposited in the channel of an organic transistor, with the effect that the mobility of the organic transistor is higher than the mobility of an organic device including a composition without the small molecule crystallization modifier.

Abstract: There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.