Abstract: Substrate-side overload protection for the diaphragm structure of a microphone component having a micromechanical microphone structure which impairs the damping properties of the microphone structure as little as possible, in which the microphone structure includes a diaphragm structure having at least one acoustically active diaphragm which is formed in a diaphragm layer above a semiconductor substrate. The diaphragm structure spans at least one sound opening in the rear side of the substrate. A stationary, acoustically permeable counter element is formed in the layer structure of the component above the diaphragm layer. According to the invention, at least projections are formed at the outer edge area of the diaphragm structure which protrude beyond the edge area of the sound opening, so that the edge area of the sound opening acts as a substrate-side stop for the diaphragm structure.

Abstract: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.

Abstract: A micromechanical structure includes a substrate, a micromechanical functional structure, and a conductor track arrangement. The substrate has a top side, and the micromechanical functional structure is formed in the substrate on the top side. The conductor track arrangement is formed above the top side of the substrate, and the conductor track arrangement includes at least two insulation layers of non-conductive material and a conductor track layer of conductive material located between the at least two insulation layers.

Abstract: A microphone component has a micromechanical microphone pattern which is implemented in a layer construction on a semiconductor substrate and includes (i) an acoustically active diaphragm which at least partially spans a sound opening on the backside of the substrate, (ii) at least one movable electrode of a microphone capacitor system, and (iii) a stationary acoustically penetrable counterelement having through holes, which counterelement is situated in the layer construction over the diaphragm and functions as the carrier for at least one immovable electrode of the microphone capacitor system. The diaphragm is tied in to the semiconductor substrate in a middle area, and the diaphragm has a corrugated sheet metal type of corrugation, at least in regions.

Abstract: A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Abstract: An image pixel apparatus for detecting electromagnetic radiation includes an absorption structure device configured to absorb the electromagnetic radiation and to take it up as a quantity of heat. At least one plasmonic resonance structure device of the apparatus is configured to forward the electromagnetic radiation to the absorption structure device. A detection device that has at least one detection element is configured to detect the electromagnetic radiation by way of changes in an electrical property of the at least one detection element that are caused by the quantity of heat taken up.

Abstract: A production process for a micromechanical component includes at least partially structuring at least one structure from at least one monocrystalline silicon layer by at least performing a crystal-orientation-dependent etching step on an upper side of the silicon layer with a given (110) surface orientation of the silicon layer. For the at least partial structuring of the at least one structure, at least one crystal-orientation-independent etching step is additionally performed on the upper side of the silicon layer with the given (110) surface orientation of the silicon layer.

Abstract: A capacitive MEMS microphone structure is provided, which micromechanical microphone structure of component is realized in a layer construction and includes: a diaphragm structure sensitive to sound pressure, which is deflectable in a direction perpendicular to the layer planes of the layer construction; an acoustically penetrable counter-element which has through holes and is formed above or below the diaphragm structure in the layer construction; and a capacitor system for detecting the excursions of the diaphragm structure. The diaphragm structure includes a structural element in the middle area of the diaphragm structure, which structural element projects perpendicularly from the diaphragm plane and which, depending on the degree of excursion of the diaphragm structure, variably extends into a correspondingly formed and positioned through hole in the counter-element.

Abstract: A microelectromechanical component and a method for producing a microelectromechanical component includes a charge-storing layer that has improved long-term stability. The charge-storing layer is completely enclosed by dielectric layers such that there is a high potential barrier between the charge-storing layer and the dielectric layers. During normal operation, it is not possible to overcome this high potential barrier and, as a result, the stored charge carriers are maintained over a very long period of time.

Abstract: A vertical microelectronic component includes a semiconductor substrate having a front side and a back side, and a multiplicity of fins formed on the front side. Each fin has a side wall and an upper side and is separated from other fins by trenches. Each fin includes a GaN/AlGaN heterolayer region formed on the side wall and including a channel region extending essentially parallel to the side wall. Each fin includes a gate terminal region arranged above the GaN/AlGaN heterolayer region and electrically insulated from the channel region in the associated trench on the side wall. A common source terminal region arranged above the fins is connected to a first end of the channel region in a vicinity of the upper sides. A common drain terminal region arranged above the back side is connected to a second end of the channel region in a vicinity of the front side.

Abstract: A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.

Abstract: A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.

Abstract: A method produces a bonding pad for thermocompression bonding. The method includes providing a carrier material having semiconductor structures, wherein an outermost edge layer of the carrier material is a wiring metal layer configured to make electrical contact with the semiconductor structures. The method also includes depositing a single-layered bonding metal layer directly on a surface of the wiring metal layer to produce the bonding pad.

Abstract: A bonding pad for thermocompression bonding of a carrier material to a further carrier material includes a base layer and a top layer. The base layer is made of metal, is deformable, and is connected to the carrier material. The metal is nickel-based. The top layer is metallic and is connected directly to the base layer. The top layer is arranged at least on a side of the base layer which faces away from the carrier material. The top layer has a smaller layer thickness than the base layer. In at least one embodiment, the top layer has a greater oxidation resistance than the base layer.

Abstract: A sensor includes a body having a sensor surface and an oblique surface. A sensor element is arranged on the sensor surface and configured to pick up a direction component of a directional measurement variable. At least one contact-making surface configured to make contact with the sensor element is arranged on the oblique surface. The oblique surface is at an angle with respect to a lattice structure of carrier material of the sensor and is oriented in a different direction than the sensor surface.

Abstract: A method for producing a semiconductor component (166) is proposed.

Abstract: A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer.

Abstract: The present invention describes a method for producing a micromechanical capacitive pressure transducer and a micromechanical component produced by this method. First, a first electrode is produced in a doped semiconductor substrate. In a further method step, a diaphragm with a second electrode is produced at the surface of the semiconductor substrate. Furthermore, it is provided to apply a first layer, which preferably is made of dielectric material, on the diaphragm and the semiconductor substrate. With the aid of this first layer, the diaphragm and the semiconductor substrate of the finished micromechanical capacitive pressure transducer are mechanically connected to one another directly or indirectly. Furthermore, a buried cavity is produced in the semiconductor substrate between the first and second electrode.

Abstract: A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.

Abstract: A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.