Patents by Inventor Chrong-Jung Lin

Chrong-Jung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12211949
    Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.
    Type: Grant
    Filed: October 12, 2023
    Date of Patent: January 28, 2025
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong Jung Lin, Burn Jeng Lin, Shi-Jiun Wang
  • Publication number: 20250029655
    Abstract: A fabricating method of a resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step includes providing the resistive random access memory unit. The forming step includes applying a setting voltage on a lower metal layer, and coupling an upper metal layer to a ground voltage to transform the resistive random access memory unit to a low resistive state. The reverse resetting step includes coupling the lower metal layer to the ground voltage and applying a resetting voltage to the upper metal layer to transform the resistive random access memory unit to a one-way conduction state. A forward reading current is greater than a reverse reading current, and the forward reading current is less than 3000 times of the reverse reading current.
    Type: Application
    Filed: January 17, 2024
    Publication date: January 23, 2025
    Inventors: Ya-Chin KING, Chrong-Jung LIN, Yu-Cheng LIN, Yao-Hung HUANG
  • Publication number: 20240404611
    Abstract: A The memory device includes a memory array comprising a plurality of one-time-programmable (OTP) memory cells. Each of the plurality of OTP memory cells comprises: a select transistor; a diode; and a conductor fuse. The diode and the conductor fuse are coupled in series, with the select transistor coupled to a common node between the diode and the conductor fuse.
    Type: Application
    Filed: June 2, 2023
    Publication date: December 5, 2024
    Inventors: Chrong Jung Lin, Ya-Chin King, Li-Yu Wang
  • Publication number: 20240405087
    Abstract: A semiconductor device includes a sensing element including a sensing electrode and a filter covering the sensing electrode. The filter includes a first work function layer and a second work function layer. The first work function layer is over the sensing electrode. The second work function layer is over the first work function layer. A work function value of the second work function layer is greater than a work function value of the first work function layer, and an atomic percentage of metal in the second work function layer is greater than an atomic percentage of metal in the first work function layer.
    Type: Application
    Filed: June 2, 2023
    Publication date: December 5, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Yao-Hung HUANG, Wei CHANG
  • Publication number: 20240395641
    Abstract: A device in a chamber is provided. The device comprises at least one die. The at least one die comprise a first voltage generator, a dielectric layer and a first voltage regulator circuit. The first voltage generator is charged to have a first induced voltage by induced charges generated in response to a first voltage of a first electrode of a chuck in the chamber. The dielectric layer surrounds the first voltage generator to isolate the first voltage generator from the first electrode. The first voltage regulator circuit is coupled to the first voltage generator to receive the first induced voltage and generates a first power supply voltage according to the first induced voltage for a first circuit in the device.
    Type: Application
    Filed: May 23, 2023
    Publication date: November 28, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong Jung LIN, Burn Jeng LIN, Wei CHANG
  • Patent number: 12142537
    Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an energy sensing film. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The energy sensing film is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the energy sensing film is contacted with an external energy source, and the induced charge is stored in the floating gate.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: November 12, 2024
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Burn-Jeng Lin, Chrong-Jung Lin, Ya-Chin King, Yi-Pei Tsai
  • Publication number: 20240355388
    Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.
    Type: Application
    Filed: June 28, 2024
    Publication date: October 24, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Der Chih, Jonathan Tsung-Yung Chang, Yun-Sheng Chen, Maybe Chen, Ya-Chin King, Wen Zhang Lin, Chrong Jung Lin, Hsin-Yuan Yu
  • Publication number: 20240324474
    Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
    Type: Application
    Filed: June 6, 2024
    Publication date: September 26, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der CHIH, Wen-Zhang LIN, Yun-Sheng CHEN, Jonathan Tsung-Yung CHANG, Chrong-Jung LIN, Ya-Chin KING, Cheng-Jun LIN, Wang-Yi LEE
  • Publication number: 20240290575
    Abstract: A semiconductor structure includes a substrate, a semiconductor detector, a peripheral circuit, and a multilayer interconnection structure. The substrate has a sensing region and a peripheral region. The semiconductor detector is on the sensing region of the substrate. The semiconductor detector includes a first detector unit, a second detector unit, and a third detector unit. Each of the first, second, third detector units includes a first transistor and a second transistor connected in series. A gate of the second transistor is a floating gate. The peripheral circuit is on the peripheral region of the substrate and is coupled to the semiconductor detector. The multilayer interconnection structure is over the substrate. A first number of metallization layers of the multilayer interconnection structure directly above the peripheral circuit is greater than a second number of metallization layers of the multilayer interconnection structure directly above the semiconductor detector.
    Type: Application
    Filed: May 6, 2024
    Publication date: August 29, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong-Jung LIN, Burn-Jeng LIN, Chien-Ping WANG, Shao-Hua WANG, Chun-Lin CHANG, Li-Jui CHEN
  • Patent number: 12051466
    Abstract: Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: July 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der Chih, Jonathan Tsung-Yung Chang, Yun-Sheng Chen, Maybe Chen, Ya-chin King, Wen Zhang Lin, Chrong Jung Lin, Hsin-Yuan Yu
  • Patent number: 12041860
    Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der Chih, Wen-Zhang Lin, Yun-Sheng Chen, Jonathan Tsung-Yung Chang, Chrong-Jung Lin, Ya-Chin King, Cheng-Jun Lin, Wang-Yi Lee
  • Patent number: 12040028
    Abstract: A low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed through the second via is a sum of a second current passed through the first via and a third current passed through the select transistor.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: July 16, 2024
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong-Jung Lin, Yao-Hung Huang
  • Patent number: 12009177
    Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: June 11, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong-Jung Lin, Burn-Jeng Lin, Chien-Ping Wang, Shao-Hua Wang, Chun-Lin Chang, Li-Jui Chen
  • Publication number: 20240105504
    Abstract: A semiconductor device includes an insulating base layer, a semiconductor layer, an insulating layer, an isolation trench and a gettering site. The semiconductor layer and the insulating layer are disposed on the insulating base layer in sequence, and the isolation trench is disposed in the semiconductor layer and passes through the insulating layer. The isolation trench includes a first cross-section, a second cross-section and a third cross-section from top to bottom. The first cross-section is higher than the bottom surface of the insulating layer, and the second cross-section and the third cross-section are lower than the bottom surface of the insulating layer. The gettering site is disposed in the semiconductor layer and in contact with the isolation trench, and the vertex of the gettering site is lower than the second cross-section.
    Type: Application
    Filed: September 23, 2022
    Publication date: March 28, 2024
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chrong-Jung Lin, Chia-Shen Liu, Wen-Hua Wen
  • Patent number: 11943936
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Der Chih, May-Be Chen, Yun-Sheng Chen, Jonathan Tsung-Yung Chang, Wen Zhang Lin, Chrong Jung Lin, Ya-Chin King, Chieh Lee, Wang-Yi Lee
  • Publication number: 20240038921
    Abstract: A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
  • Publication number: 20230378377
    Abstract: A device includes a detector, a sensing pad, a ring structure, a control circuit, a first transistor, and a second transistor. The sensing pad is electrically connected to the detector. The ring structure is over the sensing pad and includes an upper conductive ring and a lower conductive ring between the upper conductive ring and the sensing pad. The first transistor interconnects the upper conductive ring and the control circuit. The second transistor interconnects the lower conductive ring and the control circuit.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 23, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin KING, Chrong Jung LIN, Burn Jeng LIN, Shi-Jiun WANG
  • Patent number: 11824133
    Abstract: A device includes a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact. The semiconductor fin includes a channel region and source/drain regions on opposite sides of the channel region. The isolation structure laterally surrounds the semiconductor fin. The gate structure is over the channel region of the semiconductor fin. The source/drain structures are respectively over the source/drain regions of the semiconductor fin. The sensing contact is directly on the isolation structure and adjacent to the gate structure. The sensing pad structure is connected to the sensing contact. The reading contact is directly on the isolation structure and adjacent to the gate structure.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: November 21, 2023
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Ya-Chin King, Chrong Jung Lin, Burn Jeng Lin, Shi-Jiun Wang
  • Publication number: 20230343403
    Abstract: A low voltage one-time-programmable memory includes a first conductive layer, a first via, a second conductive layer, a select transistor, a second via and a third conductive layer. The first via is electrically connected to the first conductive layer. The second conductive layer is electrically connected to the first via. The select transistor is electrically connected to the second conductive layer. The second via is electrically connected to the second conductive layer. The third conductive layer is electrically connected to the second via. A first current passed through the second via is a sum of a second current passed through the first via and a third current passed through the select transistor.
    Type: Application
    Filed: July 18, 2022
    Publication date: October 26, 2023
    Inventors: Ya-Chin KING, Chrong-Jung LIN, Yao-Hung HUANG
  • Publication number: 20230326521
    Abstract: A memory device includes a first active area, a first doped structure of a first doping type, a second active area, a first gate structure and a second doped structure of a second doping type different from the first doping type. The second active area is disposed between the first active area and the first doped structure. The first gate structure is disposed between the first active area and the second active area in a layout view, and configured to store a first bit with the first active area and the second active area. The second doped structure is coupled to the first gate structure and disposed between the first doped structure and the second active area. The second doped structure and the first doped structure are configured to receive a first signal corresponding to the first bit from the first gate structure.
    Type: Application
    Filed: April 8, 2022
    Publication date: October 12, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der CHIH, Yun-Sheng CHEN, Jonathan Tsung-Yung CHANG, Hsin-Yuan YU, Chrong Jung LIN, Ya-Chin KING