Abstract: A method of forming a structure having a coating layer includes the following steps: providing a substrate; coating a fluid on the surface of the substrate, where the fluid includes a carrier and a plurality of silicon-containing nanoparticles; and performing a heating process to remove the carrier and convert the silicon-containing nanoparticles into a silicon-containing layer, a silicide layer, or a stack layer including the silicide layer and the silicon-containing layer.

Abstract: A method of forming a structure having a coating layer includes the following steps: providing a substrate; coating a fluid on the surface of the substrate, where the fluid includes a carrier and a plurality of silicon-containing nanoparticles; and performing a heating process to remove the carrier and convert the silicon-containing nanoparticles into a silicon-containing layer, a silicide layer, or a stack layer including the silicide layer and the silicon-containing layer.

Abstract: A composite for generating hydrogen includes several core-shell structures, each of which include a silicon-containing core and a shell covering the surface of the silicon-containing core. The shell includes a hydrophilic layer covering the surface of the silicon-containing core and an alkali material covering the hydrophilic layer.

Abstract: A composite material for electrode includes electrode composite particles, each of which includes a core and a shell. Each core includes carbon matrix, multiple active nanoparticles and multiple graphite particles. The active nanoparticles and the graphite particles are randomly dispersed in the carbon matrix. Each shell covers the surface of each core, and the Mohs hardness of the shell is greater than 2.

Abstract: A composite for generating hydrogen includes several core-shell structures, each of which include a silicon-containing core and a shell covering the surface of the silicon-containing core. The shell includes a hydrophilic layer covering the surface of the silicon-containing core and an alkali material covering the hydrophilic layer.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Abstract: A composite particle for electrode includes a carbon matrix, a plurality of active nanoparticles and a plurality of graphite particles. The active nanoparticles are randomly dispersed in the carbon matrix. Each of the active nanoparticles includes an active material and a protective layer. The protective layer covers the active material, and the protective layer is an oxide, a carbide or a nitride of the active material. The graphite particles are randomly dispersed in the carbon matrix. A volume fraction of the protective layer in each of the active nanoparticles is smaller than 23.0%.

Abstract: A structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The isolation structure is embedded in the substrate. The isolation structure has a bottom surface and a sidewall. The liner layer is between the substrate and the isolation. A first portion of the liner layer in contact with the sidewall of the isolation structure has a nitrogen concentration lower than a second portion of the liner layer in contact with the bottom surface of the isolation structure.

Abstract: A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.

Abstract: The present disclosure describes a silicide formation process which employs the formation of an amorphous layer in the SiGe S/D region via an application of a substrate bias voltage during a metal deposition process. For example, the method includes a substrate with a gate structure disposed thereon and a source/drain region adjacent to the gate structure. A dielectric is formed over the gate structure and the source-drain region. A contact opening is formed in the dielectric to expose a portion of the gate structure and a portion of the source/drain region. An amorphous layer is formed in the exposed portion of the source/drain region with a thickness and a composition which is based on an adjustable bias voltage applied to the substrate. Further, an anneal is performed to form a silicide on the source/drain region.

Abstract: A composite particle for electrode includes a carbon matrix, a plurality of active nanoparticles and a plurality of graphite particles. The active nanoparticles are randomly dispersed in the carbon matrix. Each of the active nanoparticles includes an active material and a protective layer. The protective layer covers the active material, and the protective layer is an oxide, a carbide or a nitride of the active material. The graphite particles are randomly dispersed in the carbon matrix. A volume fraction of the protective layer in each of the active nanoparticles is smaller than 23.0%.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

Abstract: The present invention illustrates a conductive composite material, and a negative electrode materials and a secondary battery containing the same. The conductive composite material includes a core, an inner coating layer and an outer coating layer. The core is made of a first material selected from a group consisting of WA element, metal, metal compound or alloy. The inner coating layer is existed on the core and made of oxide, nitride or carbide of the first material. The outer coating layer is existed on the inner coating layer and made of a carbon material and a second material containing halogen or VA element.

Abstract: The present disclosure describes a silicide formation process which employs the formation of an amorphous layer in the SiGe S/D region via an application of a substrate bias voltage during a metal deposition process. For example, the method includes a substrate with a gate structure disposed thereon and a source/drain region adjacent to the gate structure. A dielectric is formed over the gate structure and the source-drain region. A contact opening is formed in the dielectric to expose a portion of the gate structure and a portion of the source/drain region. An amorphous layer is formed in the exposed portion of the source/drain region with a thickness and a composition which is based on an adjustable bias voltage applied to the substrate. Further, an anneal is performed to form a silicide on the source/drain region.

Abstract: The present invention illustrates a conductive composite material, and a negative electrode materials and a secondary battery containing the same. The conductive composite material includes a core, an inner coating layer and an outer coating layer. The core is made of a first material selected from a group consisting of WA element, metal, metal compound or alloy. The inner coating layer is existed on the core and made of oxide, nitride or carbide of the first material. The outer coating layer is existed on the inner coating layer and made of a carbon material and a second material containing halogen or VA element.

Abstract: A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.

Abstract: A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.

Abstract: A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.