Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract: A composite electrode and a lithium-based battery are disclosed, wherein the composite electrode comprises: a substrate and a conductive layer formed on the substrate, wherein the conductive layer comprises graphite powders, Si-based powders, Ti-based powders, or a combination thereof embedded in a conductive matrix and coated with diamond films, and the diamond films are formed of diamond grains. The novel electrodes of the present invention when used in the Li-based battery can provide superior performance including excellent chemical inertness, physical integrity, and charge-discharge cycling life-time, and exhibit high electric conductivity and excellent lithium ion permeability.

Abstract: A backside illuminated (BSI) image sensor device includes: a substrate including a front side and a back side; a multilayer structure over the back side; and a radiation-sensing region in the substrate. The radiation-sensing region is configured to receive a radiation wave entering from the back side and transmitting through the multilayer structure. The multilayer structure includes a first high-k dielectric layer, a metal silicide layer and a second high-k dielectric layer. The first high-k dielectric layer is located over the back side. The metal silicide layer is sandwiched between the first high-k dielectric layer and the second high-k dielectric layer.

Abstract: Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light.

Abstract: The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.

Abstract: A composite electrode and a lithium-based battery are disclosed, wherein the composite electrode comprises: a substrate and a conductive layer formed on the substrate, wherein the conductive layer comprises graphite powders, Si-based powders, Ti-based powders, or a combination thereof embedded in a conductive matrix and coated with diamond films, and the diamond films are formed of diamond grains. The novel electrodes of the present invention when used in the Li-based battery can provide superior performance including excellent chemical inertness, physical integrity, and charge-discharge cycling life-time, and exhibit high electric conductivity and excellent lithium ion permeability.

Abstract: A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively.

Abstract: A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively.

Abstract: A micro/nano-pattern film contact transfer process is described, comprising: providing a mold, wherein an imprinting pattern is set in a first surface of the mold; forming a release layer on the first surface of the mold and a transfer material layer on the release layer; providing a substrate; placing the mold on a first surface of the substrate, wherein the first surface of the mold is opposite to the first surface of the substrate; applying a pre-pressed force on the substrate from a second surface opposite to the first surface of the substrate; providing a heating source to heat the transfer material layer to produce an adhesion effect between a portion of the transfer material layer contacting with the first surface of the substrate and the substrate; and removing the mold, wherein the contacting portion of the transfer material layer is transferred onto the first surface of the substrate.