Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a thin film resistor and methods of manufacture. A structure includes: a thin film resistor having an opening and being between an upper insulator material and a lower insulator material; and a contact extending through the opening in the thin film resistor and into the lower insulator material.

Abstract: A method includes determining, by a processing device based on an image of a substrate processing equipment part that forms holes, a clockwise holes spiral and an anti-clockwise holes spiral of the holes. The method further includes identifying, by the processing device, a first subset of the holes in at least one of the clockwise holes spiral or the anti-clockwise holes spiral that are at least partially clogged. A corrective action associated with the substrate processing equipment part is to be performed based on the first subset of the holes that are at least partially clogged.

Abstract: A keyboard has a top plate with a socket and a key structure that comprises a lower housing having a base, an upper housing, a pressing shaft and a spring. An annular stopper protrudes above the base. Two engaging elastic arms disposed below opposite sides of the annular stopper protrude below the base. The lower housing engages the socket by means of compressing the two engaging elastic arms. The top plate is sandwiched between the annular stopper and the two engaging elastic arms. The upper housing is assembled above the lower housing, and includes a penetrating opening. The pressing shaft is movably sandwiched between the lower housing and the upper housing. A top end of the pressing shaft penetrates through the penetrating opening. The spring is sandwiched and elastically supported between the lower housing and the pressing shaft. Thereby, the aesthetic appearance of the key structure is improved.

Abstract: A method for selecting an application and associated operational guidance to utilize on a mobile device is disclosed. In one embodiment, such a method identifies a selected environment of interest. Within the selected environment, the method identifies one or more applications that are commonly utilized by users within the selected environment and documents the one or more applications. The method detects physical entry of a particular user into the selected environment and, in response to detecting the entry, automatically notifies the particular user of the one or more applications that are commonly utilized within the selected environment. In certain embodiments, the method enables the user to quickly launch the one or more applications and/or provides operational guidance to the user with regard to using the one or more applications. A corresponding system and computer program product are also disclosed.

Abstract: A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.

Abstract: A method is provided for fabricating a cathode film layer of lithium ion batteries through atmospheric plasma spraying (APS) without using polymer adhesive. The ratio of active substance can approach 100%. A cathode film layer fabricated by APS is porous, where, with the coordination of a liquid electrolyte, electrolyte penetration paths are provided to significantly increase the area of reaction. Hence, the effective thickness of the film layer is relatively thick and the capacity of battery is increased. As an example, the thickness of a film layer of lithium cobalt oxide fabricated accordingly reaches more than 100 microns and its maximum electric capacity per unit area reaches 6 milliampere-hours per square centimeter (mAh/cm2).

Abstract: A continuous liquid level sensing system utilizing projected capacitance includes: a liquid contact layer, which has at least one surface for contacting a liquid and separates the liquid to generate a space that is dry; and a projected capacitance unit being disposed in the space and having a first capacitance value that is preset, wherein the projected capacitance unit does not directly contact the liquid, and the projected capacitance unit contacts the liquid contact layer, wherein when the liquid contact layer changes a preset electric field of the projected capacitance unit after contacting the liquid, the first capacitance value is changed to a second capacitance value; and a control device calculating a liquid level height of the liquid according to a change between the first capacitance value and the second capacitance value.

Abstract: A method and a device for acquiring character information in a picture, a non-transitory storage medium, a page processing method, and a knowledge graph construction method are disclosed. The method for acquiring character information in a picture includes: acquiring a picture and extracting at least one piece of character information in the picture; and checking-and-correcting the at least one piece of character information based on a knowledge graph.

Abstract: Aspects include amplifiers with different units for improved performance. One amplifier has a first transistor with first gate is coupled to a control input, and a first drain is coupled to a first terminal of an output, a second transistor with a second gate is coupled to the control input, and a second drain is coupled to a second terminal of the output. The amplifier has a third transistor with a third drain coupled to the first transistor source, and a third gate is coupled to a first terminal of an input, and a fourth transistor with a fourth drain is coupled to the second transistor source, and a fourth source gate is coupled to a second terminal of the input, where the first transistor source is not connected to the second transistor drain via one or more transistors.

Abstract: A method of self-testing a transceiver integrated circuit substrate includes: providing a test signal to a transmission line that is communicatively coupled, or selectively communicatively coupled, to an input of a power amplifier of a first transceiver subcircuit of the transceiver integrated circuit substrate; providing the test signal from the transmission line to an LNA of an LNA of a second transceiver subcircuit of the transceiver integrated circuit substrate; and measuring the test signal before amplification by the LNA, or after amplification by the LNA, or both.

Abstract: A solid-state lithium battery includes a solid electrolyte layer, a first electrode layer structure, a second electrode layer structure, a first collector layer and a second collector layer. The first electrode layer structure includes a first buffer electrolyte layer and a first microporous electrode layer. The first buffer electrolyte layer is located between the first microporous electrode layer and the first surface of the solid electrolyte layer. The first buffer electrolyte layer is embedded with the first surface of the solid electrolyte layer. The second electrode layer structure is disposed on the second surface of the solid electrolyte layer. The first microporous electrode layer is disposed between the first collector layer and first buffer electrolyte layer. The second electrode layer structure is disposed between the second collector layer and the second surface of the solid electrolyte layer.

Abstract: Disability-related information of a user of a computing device can be acquired, the computing device can present a scene with user interface elements to the user. An accessibility requirement of the user can be identified based on the acquired disability-related information of the user. A processing routine can be determined from a plurality of processing routines stored in a routine library based on the accessibility requirement of the user. One or more of the user interface elements of the scene can be modified using the determined processing routine. The scene with the modified one or more of the user interface elements can be presented to the user through the computing device.

Abstract: Structures for a thermo-optic phase shifter and methods of forming a thermo-optic phase shifter. The structure comprises an interconnect structure including a dielectric layer, a waveguide core on the dielectric layer, and a heater on the dielectric layer. The heater includes a resistive heating element positioned adjacent to the waveguide core.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: Provided herein are monolayer films, and also multilayer films comprising a core, a subskin disposed on the core, and a skin disposed on the subskin. The films may have an Elmendorf tear in MD greater than about 7.0 g/?m, a dart impact greater than about 6.0 g/?m, and a 1% secant modulus greater than about 200 MPa. In multilayer films, the core comprises a first polyethylene blend comprising an ethylene 1-hexene copolymer and a high density polyethylene composition in an amount between about 0 wt. % and about 40 wt. %. Further provided herein are bags and laminates comprising the present films.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a silicon oxycarbonitride spacer, a silicon oxycarbide spacer, a silicon nitride spacer, and a source/drain structure. The gate structure is on the semiconductor substrate. The silicon oxycarbonitride spacer is on a sidewall of the gate structure. The silicon oxycarbide spacer is on a sidewall of the silicon oxycarbonitride spacer. The silicon nitride spacer is on a sidewall of the silicon oxycarbide spacer, in which an upper portion of the silicon nitride spacer has a lower density than a lower portion of the silicon nitride spacer. The source/drain structure is on the semiconductor substrate and adjacent to the gate structure.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a gate electrode, a gate electrode contact layer over the gate electrode, forming a dielectric layer over the gate electrode contact layer, and performing an etch through the dielectric layer, the etch forming an opening that exposes the gate electrode contact layer. The method further includes performing a post-etch treatment on the opening formed by the etch process by exposing the opening to a plasma. The method further includes forming gate electrode contacts in the openings after the post-etch treatment by a bottom-up deposition process.

Abstract: A zoom lens arranged along an optical axis includes a first lens group and a second lens group. The second lens group has at least one aspheric lens. The first lens group moves toward an image side and the second lens group moves away from the image side along the optical axis during zooming. The first lens group is moved for focusing, and the second lens group is moved for zooming.