Abstract: Disclosed herein relates to an electrolyte composition and a lithium secondary battery including the same, wherein the electrolyte composition can not only effectively reduce gas generated during charging and discharging of the lithium secondary battery by including one or more electrolyte additives of a chemical compound represented by Formula 1 or a chemical compound represented by Formula 2, but also has the advantage of strengthening the SEI layer on the electrode surface, thereby improving the storage characteristics and life characteristics at high temperatures.

Abstract: The present invention provides a separation membrane for a lithium secondary battery and a lithium secondary battery including the same, the separation membrane including: a substrate; a first coating layer containing a first organic binder which is able to be bonded to a gel polymer electrolyte through an epoxy ring-opening reaction; and a second coating layer containing a second organic binder, wherein the first organic binder has a functional group capable of ring-opening reaction with an epoxy group, or a combination thereof, and the gel polymer electrolyte is formed by polymerizing an oligomer having an epoxy group, a functional group capable of ring-opening reaction with an epoxy group, or a combination thereof.

Abstract: The present invention relates to a composition for a gel polymer electrolyte, which includes a lithium salt, a non-aqueous organic solvent, a polymerization initiator, and an oligomer containing a polycarbonate-based repeating unit, a gel polymer electrolyte in which mechanical strength and ion transfer capability are improved by polymerization of the composition for a gel polymer electrolyte, and a lithium secondary battery in which external impact and stability during high-temperature storage are improved by including the gel polymer electrolyte.

Abstract: A gel polymer electrolyte composition, a secondary battery including the same, and a manufacturing method of a secondary battery are disclosed. Advantages of the disclosed aspects include increasing process efficiency by reducing the curing time of a gel polymer electrolyte while preventing leakage of an electrolyte.

Abstract: An electrolyte composition with improved high temperature safety and a lithium secondary battery including the same is described herein. The electrolyte composition containing a primary additive comprising a compound represented by Formula 1, and specific amount of a secondary additive that contains one or more of cyclic carbonates, can not only reduce the generation of gas during secondary battery charge-discharge, but also improve storage characteristics and the lifespan characteristics under a high temperature condition by strengthening the SEI coating film on the surface of an electrode. wherein all the variables are described herein.

Abstract: A gel polymer electrolyte composition, a secondary battery including the same, and a manufacturing method of a secondary battery are disclosed. Advantages of the disclosed aspects include increasing process efficiency by reducing the curing time of a gel polymer electrolyte while preventing leakage of an electrolyte.

Abstract: The present invention relates to a separator for a secondary battery, the separator including a substrate and a coating layer formed on the surface of the substrate, wherein the coating layer includes an organic binder and inorganic particles, and the organic binder contains an ethylenically unsaturated group, and to a lithium secondary battery including the same.

Abstract: An electrolyte for a lithium secondary battery is disclosed herein. In some embodiments, an electrolyte includes a lithium salt present in a concentration of 1.6 M to 5 M, an oligomer mixture including a first oligomer containing a unit represented by Formula 1 and a second oligomer containing a unit represented by Formula 2, and an organic solvent.

Abstract: A robot and an operating method thereof are provided. The robot includes a controller, a force sensor configured to be electrically connected to the controller, mounted in the robot, and sense an external force applied to the robot, an arm configured to be electrically connected to the controller so that an operation is controlled by the controller, an adsorber configured to adsorb a target object, and a coupler configured to couple the arm and the adsorber. The robot may transmit or receive a wireless signal on a mobile communication network constructed according to the 5G (generation) communication.

Abstract: A robot and an operating method thereof are provided. The robot includes a controller, a force sensor configured to be electrically connected to the controller, mounted in the robot, and sense an external force applied to the robot, an arm configured to be electrically connected to the controller so that an operation is controlled by the controller, an adsorber configured to adsorb a target object, and a coupler configured to couple the arm and the adsorber. The robot may transmit or receive a wireless signal on a mobile communication network constructed according to the 5G (generation) communication.

Abstract: The present invention relates to a composition for bone grafting, comprising nucleic acids, a bone graft material, and a cationic polymer, and a bone graft kit for manufacturing the same. The composition for bone grafting, of the present invention, has been confirmed to promote the formation of a cushioning force that can respond to physiological stress and the formation of new bones at grafted sites, and has been confirmed to improve bone grafting convenience, and thus is expected to be effectively usable in the treatment of bone diseases.

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract: Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Abstract: A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions.

Abstract: A semiconductor device includes a first gate structure on a first region of a substrate and a second gate structure on a second region of the substrate, a first impurity region on an upper portion of the substrate adjacent to the first gate structure and a second impurity region on an upper portion of the substrate adjacent to the second gate structure, a first metal silicide layer on the first impurity region, a Fermi level pinning layer on the second impurity region, a second metal silicide layer on the Fermi level pinning layer, and a first contact plug on the first metal silicide layer and a second contact plug on the second metal silicide layer. The Fermi level pinning layer pins a Fermi level of the second metal silicide layer to a given energy level.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Abstract: A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.

Abstract: A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.