Abstract: A memory card system and method of transmitting lifetime information thereof includes a host generating a lifetime information command, and a memory card including a memory to store data provided from the host, the memory card providing the host with lifetime information of the memory in response to the lifetime information command of the host.

Abstract: A constant amplitude coded bi-orthogonal demodulator demodulates the received constant amplitude bi-orthogonal modulated data, cancels the parity bits to generate the serial data, detects the occurrence of an error by dividing the demodulated data into a plurality of groups of data, outputs the serial data as demodulated data if an error does not occur, sequentially converts bit polarities of data of groups in which an error occurs if the error detector detects the error, compares distances between the received bi-orthogonal modulated data and the constant amplitude coded bi-orthogonal modulated data, and selects, as demodulated data, data of which corresponding bit polarities are changed according to the comparison results. According to the present invention, power consumption is reduced, a power amplifier can be manufactured at an inexpensive cost, interference robustness can be ensured, and data can be transmitted at a high transmission rate and a variable transmission rate.

Abstract: A contactless card including an antenna coil, a resonant capacitor coupled between both end terminals of the antenna, a plurality of capacitors coupled in parallel with the terminals of the antenna correspondingly through switches, a shunt transistor coupled between the terminals of the antenna, forming a bypassing current path, a rectifier coupled between the terminals of the antenna, generating a DC voltage, and a control circuit sensing the DC voltage and controlling a gate voltage of the shunt transistor and on/off conditions of the switches in accordance with the sensed DC voltage.

Abstract: The present invention relates to an adaptive frequency hopping apparatus in a wireless personal area network (WPAN) system, wherein predetermined packets of data can be correctly transmitted by estimating the channel qualities of operating bands in advance and transmitting the packets through a proper band.

Abstract: Provided is a method of fabricating a heterojunction bipolar transistor (HBT). The method includes: sequentially depositing a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter capping layer on a substrate; forming an emitter electrode on the emitter capping layer; forming a mesa type emitter to expose the base layer by sequentially etching the emitter capping layer and the emitter layer using the emitter electrode as an etch mask in vertical and negative-sloped directions to the substrate, respectively; and forming a base electrode on the exposed base layer using the emitter electrode as a mask in self-alignment with the emitter electrode. In this method, a distance between the mesa type emitter and the base electrode can be minimized and reproducibly controlled. Also, a self-aligned device with an excellent high-frequency characteristic can be embodied.

Abstract: An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

Abstract: An apparatus for a semiconductor device includes: a chamber; a susceptor in the chamber; a plurality of heating-blocks on the susceptor; a lift pin assembly through the susceptor; a substrate holder over the susceptor, the substrate holder having a plurality of through holes corresponding to the plurality of heating-blocks; and a shaft combined with the substrate holder-through the susceptor.

Abstract: A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

Abstract: A constant amplitude coded bi-orthogonal demodulator demodulates the received constant amplitude bi-orthogonal modulated data, cancels the parity bits to generate the serial data, detects the occurrence of an error by dividing the demodulated data into a plurality of groups of data, outputs the serial data as demodulated data if an error does not occur, sequentially converts bit polarities of data of groups in which an error occurs if the error detector detects the error, compares distances between the received bi-orthogonal modulated data and the constant amplitude coded bi-orthogonal modulated data, and selects, as demodulated data, data of which corresponding bit polarities are changed according to the comparison results.

Abstract: An apparatus for compensating a channel distortion in a Bluetooth system to process a received signal having access codes comprises a multiplier for multiplying the received signal by a previously obtained channel distortion compensation signal to thereby provide a multiplied signal; a demodulator for demodulating access codes of the multiplied signal to thereby output demodulated received access codes as a demodulated signal; a correlation detection circuit for detecting correlation values between the demodulated received access codes and the access codes of the received signal previously stored therein to detect a start point of the received signal, thereby providing detected access codes having corresponding correlation values greater than a predetermined threshold and providing an enable signal if there are one or more correlation values greater than the predetermined threshold; and a channel distortion compensation circuit for performing a channel distortion compensation based on the detected access code

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: An apparatus for transmitting data in a wireless communication system is disclosed. An apparatus for transmitting data in a wireless communication system according to the present invention includes a serial to parallel converter operable to transform serial data into parallel data; a summer operable to combine the parallel data after multiplying them by orthogonal code; a level clipper operable to remove a portion of the summed signal above and below a desired threshold range; and a quadrature phase shift keying(QPSK) modulator operable to change the phase of the clipped signal and to transfer the modulated signal therefrom.

Abstract: Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.

Abstract: A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them.

Abstract: An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor substrate; a substrate transport port for loading said semiconductor substrate into said reactor; and upper and lower plasma electrodes for generating plasma within said reaction region, said upper and lower plasma electrodes being disposed in the upper and lower portions of said reaction region in respect to said pedestal, respectively. The apparatus further comprise a slot valve plasma electrode within the substrate transport port, and the slot valve plasma electrode is connected to the lower plasma electrode via an RF wire. Also, the upper and lower plasma electrodes are connected to the same RF power supply.

Abstract: The present invention relates to an adaptive frequency hopping apparatus in a wireless personal area network (WPAN) system, wherein predetermined packets of data can be correctly transmitted by estimating the channel qualities of operating bands in advance and transmitting the packets through a proper band.

Abstract: A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.