Abstract: An apparatus for an apparatus for fabricating a semiconductor device comprising: an electrically grounded reactor for providing a reaction space sealed from the outer atmosphere; a susceptor for settling a wafer and arranged within the reactor to prevent electric connection to the reactor; a plasma electrode provided around the upper part of the reactor; an RF power supply electrically connected to the susceptor and the plasma electrode to provide RF power to the same; and an RF relay for applying the RF power supplied from the RF power supply to at least one of the susceptor and the plasma electrode. According to the apparatus, the optimal plasma atmosphere can be easily generated for a certain process without any additional plasma electrode. Furthermore, cleaning around the susceptor can be efficiently carried out by using the susceptor as a plasma electrode.

Abstract: An apparatus for fabricating a semiconductor device in which an O-ring can be protected from any thermal damage when used for sealing a reaction chamber or a quartz tube in a high temperature process, the apparatus comprising: a reaction chamber having an upper chamber with an upper flange and a lower chamber with a lower flange, the upper and lower flanges being coupled to define a reaction space sealed from the outer atmosphere; an O-ring inserted between the upper and lower flanges; a heater arranged within the reaction chamber; a water pipe provided within the lower flange; a metal seal provided to the upper surface of the lower flange of the reaction chamber; and a cooling flange provided with a water pipe adapted for cooling water to flow through the water pipe, the cooling flange being coupled with the upper flange of the reaction chamber so that the metal seal can be pressed onto the upper surface of the upper flange of the reaction chamber.

Abstract: An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified.

Abstract: An apparatus for fabricating a semiconductor device includes: a plasma torch having a hollow convey tube of which one end portion is made of a conductor so as to serve as an inner electrode, for injecting plasma generating gas through one end portion, conveying and spraying a plasma frame through the other end portion; an energy applying unit for applying a microwave to the gas conveyed through the convey tube and adds an energy thereto; an outer electrode for surrounding the other end portion of the convey tube and its extended portion coaxially; an insulation tube positioned between the convey tube and the outer electrode for electrically insulating the other end portion of the convey tube and the outer electrode and surrounding partially the convey tube coaxially; a power source for applying a voltage to the inner electrode and the outer electrode; a suscepter installed facing the plasma frame sprayed from the plasma torch; a suscepter moving unit for moving the suscepter in the vertical and horizontal dir

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.

Abstract: A method for forming a gate oxide film includes the steps of: activating either one of deutrium and oxygen through remote plasma process; introducing deutrium and oxygen into a reactive chamber through a sufficiently isolated gas injection units; pyro-reacting deutrium and oxygen to form deuterium vapor; and heating a silicon wafer at an atmosphere of the deutrium vapor and forming a gate silicon oxide film of which silicon dangling bond on the silicon wafer surface makes a Si—D bonding. The silicon dangling bond existing at the interface between the silicon and the SiO2 gate oxide film makes the Si—D bonding, stronger than Si—H bonding, to form the SiO2 film. Therefore, a gate oxide film having an excellent film quality can be formed. In addition, the oxidation is performed at a comparatively low temperature, so that the problem of difficulty in controlling a threshold voltage as the dopant doped at the lower portion of the gate oxide film is diffused outwardly is solved.

Abstract: An apparatus for fabricating a semiconductor device includes: a plasma torch having a hollow convey tube of which one end portion is made of a conductor so as to serve as an inner electrode, for injecting plasma generating gas through one end portion, conveying and spraying a plasma frame through the other end portion; an energy applying unit for applying a microwave to the gas conveyed through the convey tube and adds an energy thereto; an outer electrode for surrounding the other end portion of the convey tube and its extended portion coaxially; an insulation tube positioned between the convey tube and the outer electrode for electrically insulating the other end portion of the convey tube and the outer electrode and surrounding partially the convey tube coaxially; a power source for applying a voltage to the inner electrode and the outer electrode; a suscepter installed facing the plasma frame sprayed from the plasma torch; a suscepter moving unit for moving the suscepter in the vertical and horizontal dir

Abstract: A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

Abstract: An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

Abstract: A method for forming a tantalum oxynitride film which is used as a high-permittivity dielectric film of a semiconductor device. In the method of the present invention, a tantalum-containing film is first formed on a semiconductor substrate, and then the tantalum-containing film is converted into a tantalum oxynitride film using a heat treatment or a plasma treatment in a reactive gas. According to the method of the present invention, the tantalum oxynitride film can be easily formed using process conditions established in prior art processes.

Abstract: A method for removing a native oxide and contaminants from a wafer surface at a relatively low temperature ranged from 100.degree. C. to 800.degree. C. uses H.sub.2 gas or hydrogen containing gas comprising ion sources chosen from impurity ions such as boron, phosphorus, arsenic, antimony, aluminum, and germanium activated by a plasma to be applied to the wafer surface in a vacuum furnace. A method for forming a thin oxide on a silicon wafer or substrate at a relatively low temperature ranged from 250.degree. C. to 800.degree. C. applies O.sub.2 or NO.sub.2 by using a plasma to the silicon wafer in a vacuum furnace.

Abstract: An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

Abstract: An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

Abstract: An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

Abstract: Apparatus for low pressure chemical vapor deposition. The LPCVD apparatus of this invention has a compound source gas flow path which is formed between the inside and outside quartz tubes of the reactor. With the path, the apparatus supplies the compound source gas from the upper section to the lower section of the reactor and lets the source gas be introduced into the deposition reacting space of the reactor while being sufficiently mixed and sufficiently heated and achieves the desired deposition result of uniform quality and thickness of chemical thin layers. The LPCVD apparatus also prevents introduction of oxygen into the reactor when washing the quartz tubes of reactor using N.sub.2 gas, thus to prevent forming of undesirable oxide on the wafers and to minimize the fraction defective of result wafers.