Abstract: A method and system are described for identifying a geologic object through cross sections of a geologic data volume. The method includes obtaining a geologic data volume having a set of cross sections. Then, two or more cross sections are selected and a transformation vector is estimated between the cross sections. Based on the transformation vector, a geologic object is identified within the geologic data volume.

Abstract: Distinct paths (40), e.g., locally optimal, are determined in a heterogeneous velocity field (32) between a source object and a target object (33) using gradients (35) of a two-way total arrival time field (34). The foregoing technique may be used to assess hydrocarbon reservoir connectivity.

Abstract: A method of creating a visual display based on a plurality of data sources is provided. An exemplary embodiment of the method comprises extracting a set of extracted data from the plurality of data sources and processing at least a portion of the extracted data with a set of knowledge agents according to specific criteria to create at least one data assemblage. The exemplary method also comprises providing an integrated two-dimensional/three-dimensional (2D/3D) visual display in which at least one 2D element of the at least one data assemblage is integrated into a 3D visual representation using a mapping identifier and a criteria identifier.

Abstract: Disclosed is a method for preparing hematite iron oxide having various nanostructures, including: preparing a mixture solution by adding iron chloride and caffeine to a solvent and magnetically stirring; and performing hydrothermal synthesis, wherein the solvent is selected from water, ethanol, propanol and methanol. In accordance with the present disclosure, hematite iron oxide (?-Fe2O3) superstructures of various shapes, including grape, cube, dumbbell and microsphere shapes, can be synthesized in different solvents using caffeine. The shapes can be controlled variously via a simple one-step synthesis route without using a growth-inducing agent and without separation based on size. The prepared hematite iron oxide exhibits high coercivity at room temperature owing to its fine crystal structures and anisotropic shapes.

Abstract: A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.

Abstract: A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

Abstract: A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

Abstract: A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.

Abstract: In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

Abstract: There is provided a system and method for creating model of a subsurface region based on multiple depth values. The method includes selecting seeds that represent a starting location within a desired horizon surfaces and generating a plurality of candidate horizons from the selected seeds. A number of depth values from the candidate horizons may be combined into a representative depth value and an uncertainty may be computed based on discrepancies among the depth values. A model of the subsurface region may be created using the depth values and the uncertainty.

Abstract: A Mössbauer spectroscopy system for applying an external magnetic field at cryogenic temperature using a refrigerator is provided. A Mössbauer spectrum can be obtained by applying the external magnetic field while changing the temperature of a superconducting magnet and a sample from a cryogenic temperature using the refrigerator, the external magnetic field can be applied while cooling the superconducting magnet using the refrigerator without the need for use of a liquid helium, thereby saving the operation cost according to consumption of the liquid helium, the mounting of a sample which it is desired to measure is easy, thereby minimizing a possibility that a worker will be exposed to gamma rays, and a convenience in use of a user can be improved.

Abstract: A method is disclosed for determining the connectivity architecture of a hydrocarbon reservoir in terms of locally optimal paths between selected source points, e.g. wells. In one embodiment of the invention, a fast-marching method (133) is used to compute the distance field (or the time of arrival field) from N selected source points in a heterogeneous media, i.e. in a non-uniform velocity field. This is done by propagating N labeled (132) fronts simultaneously from N objects. Then, a method (134) is disclosed for detecting Voronoi curves or Voronoi surfaces, where fronts of differing labels meet each other. Then, saddle points are found on the Voronoi curves or surfaces (135), and each saddle point is used to determine a locally optimal path (136) between a pair of equidistant (from the saddle point), closest (to the saddle point) source points.

Abstract: A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.

Abstract: A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.

Abstract: In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

Abstract: A method and system are described for identifying a geologic object through cross sections of a geologic data volume. The method includes obtaining a geologic data volume having a set of cross sections. Then, two or more cross sections are selected and a transformation vector is estimated between the cross sections. Based on the transformation vector, a geologic object is identified within the geologic data volume.

Abstract: In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

Abstract: A method for fabricating a semiconductor device is provided using a nickel salicide process. The method includes forming a gate pattern and a source/drain region on a silicon substrate, forming a Ni-based metal layer for silicide on the silicon substrate where the gate pattern and the source/drain region are formed, and forming an N-rich titanium nitride layer on the Ni-based metal layer for silicide. Next, a thermal treatment is applied to the silicon substrate where the Ni-based metal layer for silicide and the N-rich titanium nitride layer are formed, thereby forming a nickel silicide on each of the gate pattern and the source/drain region. Then, the Ni-based metal layer for silicide and the N-rich titanium nitride layer are selectively removed to expose a top portion of a nickel silicide layer formed on the gate pattern and the source/drain region.

Abstract: Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.

Abstract: A method of creating a visual display based on a plurality of data sources is provided. An exemplary embodiment of the method comprises extracting a set of extracted data from the plurality of data sources and processing at least a portion of the extracted data with a set of knowledge agents according to specific criteria to create at least one data assemblage. The exemplary method also comprises providing an integrated two-dimensional/three-dimensional (2D/3D) visual display in which at least one 2D element of the at least one data assemblage is integrated into a 3D visual representation using a mapping identifier and a criteria identifier.