Abstract: Disclosed are a method for manufacturing a lithium secondary battery positive active material exhibiting a concentration gradient and a lithium secondary battery positive active material exhibiting a concentration gradient, manufactured by the method, and more particularly, a method for manufacturing a lithium secondary battery positive active material exhibiting a concentration gradient and a lithium secondary battery positive active material exhibiting a concentration gradient, manufactured by the method, the method being characterized by forming a barrier layer so as to maintain a concentration gradient layer even in case of thermal diffusion by a subsequent thermal treatment process.

Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.

Abstract: A vehicle may include a side mirror including a housing and a mirror member provided inside the housing and rotatable in a first axis and a second axis in the housing; an input unit configured to receive an identification information related to a driver; a driving apparatus configured to identify a target position corresponding to the identification information related to the driver, acquire a plurality of paths for moving the mirror member between the identified target position and the current position, identify each of positions for switching the movement direction of the acquired plurality of paths, select a path having positions for switching the movement direction closest to a predetermined center position among the respective positions for switching the movement direction thereof, and selectively control rotation of the first axis and rotation of the second axis of the mirror member based on the selected path.

Abstract: An electronic apparatus includes a storage device having a plurality of memory blocks including a first memory block; and a controller configured to control the storage device to perform a read operation for the first memory block in response to a read request of a host. The controller controls the storage device to perform a refresh operation for the first memory block based on whether there is a difference value between a current pass read voltage and a previous pass read voltage which were applied to the first memory block when performing the read operation, and whether there is a difference between a current erase/write count and a previous erase/write count for the first memory block.

Abstract: According to various example embodiments, an electronic device is disclosed. The electronic device includes a housing having a first surface facing a first direction and a second surface facing a second, opposing direction. A first area of the first surface includes a plurality of selectable input keys. A second area of the first surface excludes the plurality of keys. A sensor module, such as a fingerprint sensor, is installed to the first area.

Abstract: Provided is an apparatus and method for diagnosing a communication fault. The apparatus includes a first slave module, a second slave module and a master module. The first slave module receives a synchronization signal through the first communication line and a first output signal through the second communication line, and transmits an input signal through the third communication line. The second slave module receives synchronization signal through the first communication line, and transmits a comparison signal to the master module through the third communication line when the second slave module receives a second output signal through the second communication line. The master module transmits the synchronization signal, the first output signal and the second output signal, and diagnose a communication fault by comparing a value of the comparison signal with a predetermined reference value or a value of the input signal.

Abstract: Provided are a method for predicting a mortality risk or a sepsis risk, implemented by a processor, to predict an emergency situation, and a device using the same. The method for predicting a mortality risk or a sepsis risk includes: receiving biological signal data for a subject from a biological signal prediction device; generating a risk sequence for the subject based on the biological signal data, by using a risk sequence generation model configured to generate a risk sequence based on the biological signal data; and predicting a risk for the subject based on the risk sequence.

Abstract: Methods and systems of classifying suspicious users are described. A processor may determine whether a domain name, of an email address of a user that requested to access a network, is valid. The processor may classify the user as a suspicious user if the domain name is invalid. If the domain name is valid, the processor may determine a likelihood that the email address is a script-generated email address. The processor may classify the user as a suspicious user if the email address is likely to be a script-generated email address. If the email address is unlikely to be a script-generated email address, the processor may identify abnormal usage behavior exhibited by the user based on a reference model. The processor may classify the user as a suspicious user if abnormal usage behavior is identified, and may reject a subsequent request from the user to access the network.

Abstract: The present invention relates to a fusion polypeptide containing a glucagon-like peptide (GLP) and an immunoglobulin hybrid Fc, and more specifically, to a fusion polypeptide with an increased half-life and improved efficacy compared to the conventional fusion polypeptide based on the discovery of an immunoglobulin hybrid Fc suitable for GLP or analogs thereof, and a pharmaceutical composition for treating diabetes, inflammatory bowel disease, endoenteritis or diarrhea caused by anticancer chemotherapy, or short bowel syndrome, containing the fusion polypeptide. The fusion polypeptide of the present invention has an increased half-life and improved resistance to DPP-4 enzyme compared to those of GLP-1 and GLP-2, and it thus has improved drug efficacy in treating diabetes, inflammatory bowel disease, endoenteritis or diarrhea caused by anticancer chemotherapy, or short bowel syndrome, compared to those of the conventional drugs.

Abstract: Provided is a tire with self-inflation device. The tube is inserted inside the side portion where the extension and contraction movements of the tire are mostly occurring in order to further enhance the efficiency of the air supply to the tire cavity during driving. The air compressed towards the driving direction is injected to the tire cavity, and the air from the outside is charged to the tube due to the negative pressure formed in the tube located in the opposite side of driving. The durability is enhanced by reducing the exposed portion of the regulator.

Abstract: The present invention provides a smart contact lens including a sensor capable of non-invasively sensing an eye disease in real time and a drug reservoir, and smart glasses for controlling the smart contact lens.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided.

Abstract: An approach is provided for determining a product value score. Features of a product are identified. Ranking data for each identified feature is collected. The ranking data includes popularity, stability, availability, and memory usage of each feature. Additional data for each feature are determined. The additional data includes an importance, a conversion rate, and a marketing impact of each feature. Based on the ranking data and the additional data, normalized data is generated according to characteristics of the features. Based on a data science prediction analysis which uses the identified features, weights of the features are determined. Based on initial results of the data science prediction analysis, a key product is selected from a set of products. Based on the key product and the weights, product value scores of products in the set of products are determined.

Abstract: A cognitive churn-analysis system of a customer-engagement management platform predicts when and why a customer is likely to reduce a current level of service of a current service offering. The system enhances results of a conventional statistical churn analysis by using cognitive methods to infer a customer's personality traits and evolving sentiment toward the service offering. By processing the results of the statistical analysis and the two cognitive analyses, the system predicts a likelihood that a customer will reduce service at a particular time by performing a churning activity. After further determining a likely reason why the customer would choose to churn, the cognitive system directs the customer-engagement management platform to educe the likelihood that the customer would make such a decision by engaging the customer with remedial actions at an optimal time.

Abstract: A semiconductor device includes a substrate including an active region, a gate structure, source/drain regions, ones of the source/drain regions having an upper surface in which a recessed region is formed, a contact plug on the source/drain regions and extending in a direction substantially perpendicular to an upper surface of the substrate from an interior of the recessed region, a metal silicide film on an internal surface of the recessed region and including a first portion between a bottom surface of the recessed region and a lower surface of the contact plug and a second portion between a side wall of the recessed region and a side surface of the contact plug, and a metal layer connected to an upper portion of the metal silicide film and on a side surface of a region of the contact plug.

Abstract: A semiconductor memory device comprises a memory cell array and a data inversion circuit. The data inversion circuit is configured to receive a first unit data and a second unit data stored in the memory cell array through different first data lines, determine, while the first unit data is transmitted to a data input/output (I/O) buffer through a second data line, whether to the invert the second unit data based on a Hamming distance between the first unit data and the second unit data, and transmit the inverted or non-inverted second unit data to the data I/O buffer through the second data line.

Abstract: An integrated circuit device includes a substrate, a gate structure, a spacer structure, a source/drain region, and a first contact structure. The substrate includes a fin-type active region. The gate structure intersects with the fin-type active region on the substrate, and has two sides and two side walls. The spacer structure is disposed on both side walls of the gate structure and includes a first spacer layer contacting at least a portion of both side walls of the gate structure and a second spacer layer disposed on the first spacer layer and having a lower dielectric constant than a dielectric constant of the first spacer layer. The source/drain region is disposed on both sides of the gate structure. The first contact structure is electrically connected to the source/drain region and includes a first contact plug disposed on the source/drain region and a first metallic capping layer disposed on the first contact plug.

Abstract: A semiconductor device and a method of manufacturing the same, the semiconductor device including a substrate; an insulating layer on the substrate, the insulating layer including a first trench and a second trench therein, the second trench having an aspect ratio that is smaller than an aspect ratio of the first trench; a barrier layer in the first trench and the second trench; a seed layer on the barrier layer in the first trench and the second trench; a first bulk layer on the seed layer and filled in the first trench; and a second bulk layer on the seed layer and filled in the second trench, wherein an average grain size of the second bulk layer is larger than an average grain size of the first bulk layer.

Abstract: An integrated circuit device includes at least one fin-type active region, a gate line on the at least one fin-type active region, and a source/drain region on the at least one fin-type active region at at least one side of the gate line. A first conductive plug is connected to the source/drain region and includes cobalt. A second conductive plug is connected to the gate line and spaced apart from the first conductive plug. A third conductive plug is connected to each of the first conductive plug and the second conductive plug. The third conductive plug electrically connects the first conductive plug and the second conductive plug.

Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.